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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
QM600HD-M
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| Description |
HIGH POWER SWITCHING USE NON-INSULATED TYPE
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| File Size |
58.83K /
4 Page |
 View
it Online |
Download Datasheet
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM600HA-5F
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| Description |
Trench Gate Design Single IGBTMOD600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/250 Volts
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| File Size |
51.12K /
4 Page |
View
it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
CM600HA-5F
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| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
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| File Size |
45.01K /
4 Page |
View
it Online |
Download Datasheet |
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Bom2Buy.com
Price and Availability
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Datasheet.hk's Sponsor |
| Part: M60011-0131J-E303 |
| Maker: N/A |
| Pack: N/A |
| Stock: 222 |
| Unit price
for : |
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50: $42.46 |
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100: $40.34 |
| 1000:
$38.22 |
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