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International Rectifier, Corp.
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Part No. |
IRHN8450
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OCR Text |
irhn7450 500v 0.45 w 11a irhn8450 500v 0.45 w 11a features: n radiation hardened up to 1 x 10 6 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-ray) hardened n neutron tolera... |
Description |
HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管(之HEXFET晶体管)
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File Size |
311.15K /
12 Page |
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irhn7450 Found Datasheets File :: 3 Search Time::1.437ms Page :: | <1> | |
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