Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3GATMA1 85X6013 |
Infineon Technologies AG |
Mosfet, N-Ch, 100V, 120A, To-263-3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.7V Rohs Compliant: Yes |Infineon IPB027N10N3GATMA1 |
1: USD4.76
|
4371 |
IPB027N10N3GATMA1 86AK5151 |
Infineon Technologies AG |
Mosfet, N-Ch, 100V, 120A, To-263 Rohs Compliant: Yes |Infineon IPB027N10N3GATMA1 |
1000: USD3.16
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3GATMA1 IPB027N10N3GATMA1CT-ND |
Infineon Technologies AG |
MOSFET N-CH 100V 120A D2PAK |
1000: USD2.917 500: USD2.917 100: USD2.9823 10: USD3.687 1: USD4.39
|
9382 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3GATMA1 IPB027N10N3GATMA1 |
Infineon Technologies AG |
Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB027N10N3GATMA1) |
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3GATMA1 726-IPB027N10N3GATMA |
Infineon Technologies AG |
MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 |
1: USD4.58 10: USD3.85 25: USD3.84 100: USD3.11 500: USD3.05 1000: USD3.04
|
1864 |
IPB027N10N3 G 726-IPB027N10N3G |
Infineon Technologies AG |
MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 |
1: USD3.26 1000: USD2.96
|
7420 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3GATMA1 V36:1790_06377077 |
Infineon Technologies AG |
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
1000: USD3.0339
|
13000 |
IPB027N10N3GATMA1 E02:0323_00274913 |
Infineon Technologies AG |
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
1000: USD2.2874
|
4000 |
IPB027N10N3GATMA1 V72:2272_06377077 |
Infineon Technologies AG |
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
250: USD2.907 100: USD2.972 25: USD3.626 10: USD3.663 1: USD4.229
|
493 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3G 73928950 |
Infineon Technologies AG |
Transistor, OptiMOS 3 Power MOSFET, N-channel, normal level, 100V, 120A, TO263 | Infineon IPB027N10N3G |
1: USD3.55 5: USD3.27 10: USD3.12 20: USD2.84
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3 G 80307547 |
Infineon Technologies AG |
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R |
6000: USD2.0489 4000: USD2.1609 2000: USD2.3102 1000: USD2.5161
|
9000 |
IPB027N10N3 G 68784584 |
Infineon Technologies AG |
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R |
1000: USD3.673 500: USD3.7652 250: USD3.8704 100: USD3.9915 50: USD4.1317 25: USD4.2954 18: USD4.4882
|
2000 |
IPB027N10N3GATMA1 71239256 |
Infineon Technologies AG |
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
100: USD2.9375 50: USD3 10: USD3.1625 9: USD3.55
|
1766 |
IPB027N10N3 G 80308359 |
Infineon Technologies AG |
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R |
1000: USD2.5161
|
1000 |
IPB027N10N3GATMA1 63454797 |
Infineon Technologies AG |
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
250: USD2.907 100: USD2.972 25: USD3.626 10: USD3.663 3: USD4.229
|
493 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3GATMA1
|
Infineon Technologies AG |
|
|
4303 |
IPB027N10N3G
|
Infineon Technologies AG |
|
|
39 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3G
|
Infineon Technologies AG |
POWER FIELD-EFFECT TRANSISTOR, 120A I(D), 100V, 0.0027OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB |
453: USD4.02 203: USD4.422 1: USD8.04
|
1600 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3GATMA1
|
Infineon Technologies AG |
IPB027N10N3 G - OptiMOS 5 100V power MOSFET |
1000: USD3.02 500: USD3.19 100: USD3.33 25: USD3.48 1: USD3.55
|
51585 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3GATMA1 IPB027N10N3GATMA1 |
Infineon Technologies AG |
Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7 |
100: USD3.8 25: USD3.91 5: USD4.21 1: USD4.5
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3GATMA1
|
Infineon Technologies AG |
|
1000: USD3.7368376 5000: USD3.6248038
|
4570 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3GATMA1 C1S322000194070 |
Infineon Technologies AG |
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R |
100: USD2.35 50: USD2.4 10: USD2.53 1: USD2.84
|
1766 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3GATMA1
|
Infineon Technologies AG |
Infineon's 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DSon and FOM figure of merit. |
1: USD3.0172
|
200 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3 G
|
Infineon Technologies AG |
RoHS(Ship within 1day) - D/C 2022 |
1000: USD2.68 500: USD2.72 100: USD2.75 50: USD2.85 10: USD2.94 1: USD3.29
|
2000 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3GATMA1 SP000506508 |
Infineon Technologies AG |
Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP000506508) |
|
0 |
IPB027N10N3GE8187ATMA1 SP001044582 |
Infineon Technologies AG |
Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP001044582) |
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3GATMA1
|
Infineon Technologies AG |
Single N-Channel 100 V 4.5 mOhm 206 nC OptiMOS� Power Mosfet - D2PAK |
1000: USD3.37 2000: USD3.15
|
2000 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPB027N10N3GATMA1
|
Infineon Technologies AG |
MOSFET N-CH 100V 120A TO263-3 |
18: USD2.826 44: USD2.319 67: USD2.247 92: USD2.174 119: USD2.102 160: USD1.884
|
46600 |
IPB027N10N3G
|
Infineon Technologies AG |
OptiMOS®3 Power-Transistor |
18: USD2.826 44: USD2.319 67: USD2.247 92: USD2.174 119: USD2.102 160: USD1.884
|
79000 |
|
|