Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
HGTG30N60B3 58K1591 |
onsemi |
Single Igbt, 600V, 60A; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.45V; Power Dissipation:208W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes |Onsemi HGTG30N60B3 |
500: USD1.32 250: USD1.32 100: USD1.32 50: USD1.32 25: USD1.32 10: USD1.32 1: USD1.32
|
80 |
HGTG30N60B3D.. 87X8812 |
onsemi |
Igbt Single Transistor, 60 A, 1.9 V, 208 W, 600 V, To-247, 3 Rohs Compliant: Yes |Onsemi HGTG30N60B3D.. |
500: USD6.04 250: USD6.27 100: USD6.51 50: USD6.96 25: USD7.41 10: USD7.86 1: USD8.7
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
HGTG30N60B3_NL 2156-HGTG30N60B3_NL-ND |
Fairchild Semiconductor Corporation |
IGBT, 60A, 600V, N-CHANNEL |
51: USD6.04
|
51 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
HGTG30N60B3 HGTG30N60B3 |
onsemi |
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG30N60B3) |
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
HGTG30N60B3
|
onsemi |
|
52: USD2.2999 17: USD2.464 7: USD3.2032 2: USD4.928
|
57 |
HGTG30N60B3
|
Harris Semiconductor |
|
83: USD2.8632 39: USD3.084 13: USD3.304 5: USD4.2952 1: USD6.608
|
85 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
HGTG30N60B3
|
onsemi |
60 A, 600 V, N-CHANNEL IGBT, TO-247 |
7: USD3.3 3: USD4.4 1: USD6.6
|
45 |
HGTG30N60B3
|
Harris Semiconductor |
60 A, 600 V, N-CHANNEL IGBT, TO-247 |
46: USD4.13 5: USD4.425 1: USD8.85
|
68 |
HGTG30N60B3
|
Harris Semiconductor |
60 A, 600 V, N-CHANNEL IGBT, TO-247 |
25: USD9.768 8: USD10.56 1: USD11.88
|
24 |
HGTG30N60B3D
|
Fairchild Semiconductor Corporation |
60 A, 600 V, N-CHANNEL IGBT, TO-247 |
4: USD6.75 2: USD9 1: USD13.5
|
3 |
HGTG30N60B3D_R4731
|
Harris Semiconductor |
INSULATED GATE BIPOLAR TRANSISTOR, 60A I(C), 600V V(BR)CES, N-CHANNEL, TO-247 |
4: USD6.75 2: USD9 1: USD13.5
|
5 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
HGTG30N60B3
|
Fairchild Semiconductor Corporation |
600 V, NPT IGBT |
1000: USD2.71 500: USD2.87 100: USD3 25: USD3.12 1: USD3.19
|
210 |
HGTG30N60B3_NL
|
Fairchild Semiconductor Corporation |
Insulated Gate Bipolar Transistor, 60A, 600V, N-Channel, TO-247 ' |
1000: USD5.18 500: USD5.49 100: USD5.73 25: USD5.98 1: USD6.1
|
51 |
HGTG30N60B3
|
Harris Semiconductor |
600 V, NPT IGBT |
1000: USD2.71 500: USD2.87 100: USD3 25: USD3.12 1: USD3.19
|
16153 |
|
|