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New Japan Radio Co., Ltd. njr
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Part No. |
NJG1557KB2
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OCR Text |
...r LOCAL) Conversion Gain vs. RF frequnecy
V
12 11 7
MIX
NF vs. RF frequnecy
V
8
MIX
=V =2.8V,Lower LOCAL,f =110MHz,
LO IF
=V =2.8V,Lower LOCAL,
LO LO
P =-25dBm,P =-10dBm
RF LO
f =110MHz,P =-10dBm
IF
Conversion Ga... |
Description |
800MHz Band Mixer GaAs MMIC(用于800MHz频带蜂巢电话的砷化镓单片微波集成电路混频
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File Size |
244.72K /
10 Page |
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it Online |
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Sanyo
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Part No. |
LB1822 1779
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OCR Text |
...lator] Precision of oscillating frequnecy Temperature coefficient Drift in rotation speed
Symbol
Conditions
Ratings min 0.4 typ 0.5 max 0.6 500 -3 0.01
Unit
V ppm
ppm/C
Referenced to indicated frequnecy
-500
%
Tr... |
Description |
Monolithic Digital IC From old datasheet system
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File Size |
66.63K /
5 Page |
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it Online |
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Sanyo
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Part No. |
2SA1669 0112
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OCR Text |
...ations
Features
* High cutoff frequnecy : fT=3.0GHz typ. * High power gain : MAG=11dB typ (f=0.9GHz) * Small noise figure : NF=2.0dB typ (f=0.9GHz)
Package Dimensions
unit:mm 2018A
[2SA1669]
C : Collector B : Base E : Emitter
S... |
Description |
PNP Epitaxial Planar Silicon Transistor High-Frequency Amplifier Applications From old datasheet system
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File Size |
128.30K /
5 Page |
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it Online |
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Sanyo
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Part No. |
2SC3502 2SA1380
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OCR Text |
... capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. * Adoption of FBET process
Package Dimensions
unit:mm 2009B
[2SA1380/2SC3502]
8.0 4.0 2.7
3.0
1.5 7.0
1.6 0.8 0.8 0.6
3.0
... |
Description |
PNP/NPN Epitaxial Planar Silicon Transistors
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File Size |
39.30K /
5 Page |
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it Online |
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Sanyo
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Part No. |
2SC3599 2SA1405
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OCR Text |
... capacitance and excellent high-frequnecy characteristic : Cre=2.5pF (NPN), 3.8pF (PNP). * Complementary pair with the 2SA1405/2SC3599. * Adoption of FBET process. ( ) : 2SA1405
3.0
1.5 7.0
1.6 0.8 0.8 0.6
3.0
11.0
15.5
0.5... |
Description |
PNP/NPN Epitaxial Planar Silicon Transistors
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File Size |
43.55K /
4 Page |
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it Online |
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SANYO
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Part No. |
2SA1405 2SC3599
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OCR Text |
... capacitance and excellent high-frequnecy characteristic : Cre=2.5pF (NPN), 3.8pF (PNP). * Complementary pair with the 2SA1405/2SC3599. * Adoption of FBET process. ( ) : 2SA1405
1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126
Specif... |
Description |
PNP Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output Applications NPN Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output Applications
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File Size |
123.11K /
4 Page |
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it Online |
Download Datasheet |
For
frequnecy Found Datasheets File :: 15 Search Time::1.938ms Page :: | <1> | 2 | |
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