ep-16 pdf Datasheet P1 Full Text Search --- IC-ON-LINE


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ep-16 Datasheet PDF File

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				International Rectifier
Part No.	IRGP35B60PD-EP IRGP35B60PD-EP-15
OCR Text	EP WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE C Applications * * * * * * * * * * * * Telecom and Server SMPS PFC and ZVS SMP...16 -- -- -- -- -- pF VGE = 0V VCC = 30V f = 1Mhz ns J ns J nC IC = 22A VCC = 400V VGE = 15V Condi...
Description	WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	406.88K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG7PH42UD1-EP IRG7PH42UD1PBF
OCR Text	...S IRG7PH42UD1PbF IRG7PH42UD1-EP VCES = 1200V I NOMINAL = 30A Features * * * * * * * * * Low VCE (ON) trench IGBT technology Low swit...16 14 VCE (V) VCE (V) Fig. 8 - Typ. Diode Forward Voltage Drop Characteristics 20 18 16 14 1...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
File Size	417.31K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG7PH42U-EP IRG7PH42UPBF
OCR Text	...ee C IRG7PH42UPbF IRG7PH42U-EP VCES = 1200V IC = 60A, TC = 100C G E TJ(max) =175C n-channel VCE(on) typ. = 1.7V Benefits ...16 32 1 700 -- Max. Units -- -- 2.0 -- -- 6.0 -- -- 150 -- 100 V V Conditions VGE = 0V, IC =...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	396.79K / 10 Page	View it Online	Download Datasheet

				Analog Devices
Part No.	ADG719-EP
OCR Text	ep rev. 0 information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by an...16 t off 3 ns typ r l = 300 , c l = 35 pf 6 ns max v s = 3 v; see figure 16 ...
Description	CMOS 1.8 V to 5.5 V, 2.5 Ω 2:1 Mux/SPDT Switch in SOT-23 Data Sheet (Rev 0, 04/2010)
File Size	206.32K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG7PH46U-EP IRG7PH46UPBF
OCR Text	...ee C IRG7PH46UPbF IRG7PH46U-EP VCES = 1200V IC = 75A, TC = 100C G E TJ(max) =175C n-channel VCE(on) typ. = 1.7V Benefits ...16 20 VGE (V) Fig. 8 - Typ. IGBT Output Characteristics TJ = 175C; tp = 20s 12 10 8 VCE (...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	382.29K / 10 Page	View it Online	Download Datasheet

For ep-16 Found Datasheets File :: 4635 Search Time::1.516ms
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