Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3GATMA1 60R2515 |
Infineon Technologies AG |
Mosfet, N Channel, 80V, 55A, Pg-Tsdson; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:55A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon BSC123N08NS3GATMA1 |
10000: USD0.564 2500: USD0.564 1000: USD0.564 500: USD0.611 100: USD0.667 10: USD0.667 1: USD0.667
|
106378 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3GATMA1 BSC123N08NS3GATMA1CT-ND |
Infineon Technologies AG |
MOSFET N-CH 80V 11A/55A TDSON |
10000: USD0.56671 5000: USD0.59413 2000: USD0.62384 1000: USD0.66269 500: USD0.8135 100: USD0.9598 10: USD1.234 1: USD1.51
|
66511 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3GXT BSC123N08NS3GATMA1 |
Infineon Technologies AG |
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1) |
5000: USD0.47138
|
5000 |
BSC123N08NS3GATMA1 60R2515 |
Infineon Technologies AG |
Power MOSFET, N Channel, 80 V, 55 A, 0.0103 ohm, PG-TDSON, Surface Mount - Bulk (Alt: 60R2515) |
1000: USD0.649 500: USD0.847 100: USD0.998 10: USD1.29 1: USD1.57
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3 G 726-BSC123N08NS3G |
Infineon Technologies AG |
MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 |
1: USD1.51 10: USD1.24 100: USD0.96 500: USD0.814 1000: USD0.663 5000: USD0.565
|
50773 |
BSC123N08NS3GATMA1 726-BSC123N08NS3GATM |
Infineon Technologies AG |
MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 |
1: USD1.51 10: USD1.24 100: USD0.959 500: USD0.813 1000: USD0.623 2500: USD0.62 5000: USD0.565 10000: USD0.551
|
59240 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3GATMA1 E02:0323_00171441 |
Infineon Technologies AG |
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R |
10000: USD0.4026 5000: USD0.407
|
25000 |
BSC123N08NS3GATMA1 V36:1790_06384483 |
Infineon Technologies AG |
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R |
5000: USD0.452
|
5000 |
BSC123N08NS3GATMA1 E32:1076_00171441 |
Infineon Technologies AG |
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R |
10000: USD0.38 5000: USD0.384 2500: USD0.5032 1000: USD0.5136 500: USD0.6274 100: USD0.7075 10: USD0.8401 1: USD0.9492
|
4934 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3 G 73928875 |
Infineon Technologies AG |
Transistor, MOSFET, N-channel normal level, 80V, 11A, 12.3 mOhm, TDSON8 | Infineon BSC123N08NS3 G |
5: USD1.54 50: USD1.43 100: USD1.38
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3GATMA1 66753846 |
Infineon Technologies AG |
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R |
10000: USD0.5463 5000: USD0.5588 2000: USD0.5738 1000: USD0.6088 500: USD0.6738 200: USD0.6763 100: USD0.715 50: USD0.8488 35: USD0.9138
|
39655 |
BSC123N08NS3GATMA1 79014908 |
Infineon Technologies AG |
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R |
10000: USD0.4027 5000: USD0.4072
|
25000 |
BSC123N08NS3GATMA1 69236387 |
Infineon Technologies AG |
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R |
5000: USD0.452
|
5000 |
BSC123N08NS3GATMA1 35864420 |
Infineon Technologies AG |
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R |
10000: USD0.3801 5000: USD0.3841 2500: USD0.5034 1000: USD0.5138 500: USD0.6276 100: USD0.7078 20: USD0.8404
|
4920 |
BSC123N08NS3GATMA1 80894114 |
Infineon Technologies AG |
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R |
200: USD0.4825 100: USD0.4975 58: USD0.5413
|
220 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3G
|
Infineon Technologies AG |
|
53: USD0.5625 15: USD0.975 4: USD1.5
|
170 |
BSC123N08NS3GATMA1
|
Infineon Technologies AG |
|
|
1083 |
BSC123N08NS3 G
|
Infineon Technologies AG |
|
|
439 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3G
|
Infineon Technologies AG |
POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 80V, 0.0123OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
14: USD0.9625 4: USD1.54 1: USD1.925
|
25 |
BSC123N08NS3G
|
Infineon Technologies AG |
POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 80V, 0.0123OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
61: USD0.6 14: USD1 1: USD2
|
136 |
BSC123N08NS3GATMA1
|
Infineon Technologies AG |
POWER FIELD-EFFECT TRANSISTOR, 55A I(D), 80V, 0.0123OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
14: USD0.9625 4: USD1.54 1: USD1.925
|
25 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3GATMA1 BSC123N08NS3GATMA1 |
Infineon Technologies AG |
Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8 |
500: USD0.79 250: USD0.87 100: USD0.95 50: USD1.03 10: USD1.2 1: USD1.45
|
2880 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3 G
|
Infineon Technologies AG |
|
1250: USD1.5194205 2500: USD1.4741639
|
33540 |
BSC123N08NS3GATMA1
|
Infineon Technologies AG |
|
5000: USD0.64894223 25000: USD0.6294787
|
33540 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3 G TMOSP9060 |
Infineon Technologies AG |
N-CH 80V 55A 12mOhm TDSON-8 |
5000: USD0.3848 10000: USD0.3628 15000: USD0.3409 20000: USD0.3079 30000: USD0.2969
|
15000 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3GATMA1 C1S322000840346 |
Infineon Technologies AG |
MOSFET |
10000: USD0.437 5000: USD0.447 2000: USD0.459 1000: USD0.487 500: USD0.539 200: USD0.541 100: USD0.572 50: USD0.679 10: USD0.731 1: USD1.09
|
39655 |
BSC123N08NS3GATMA1 C1S322000090020 |
Infineon Technologies AG |
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP |
200: USD0.386 100: USD0.398 50: USD0.433 10: USD0.47 1: USD0.62
|
220 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3G
|
Infineon Technologies AG |
80V 11A 12.3m��@10V,33A 2.5W 3.5V@33uA N Channel TDSON-8-EP(5x6) MOSFETs ROHS |
5: USD1.21765 50: USD0.70942 150: USD0.50823 500: USD0.41748 2500: USD0.37818
|
4954 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3GATMA1 SP000443916 |
Infineon Technologies AG |
Power MOSFET, N Channel, 80 V, 55 A, 0.0103 ohm, PG-TDSON, Surface Mount (Alt: SP000443916) |
|
155000 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3G
|
Infineon Technologies AG |
80V 11A 12.3m10V33A 2.5W 3.5V33uA 1PCSNChannel TDSON-8-EP(5x6) MOSFETs ROHS |
1000: USD0.3859 500: USD0.426 100: USD0.5186 30: USD0.7239 10: USD0.923 1: USD1.2425
|
4954 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3GATMA1
|
Infineon Technologies AG |
Single N-Channel 80 V 24 mOhm 25 nC OptiMOS� Power Mosfet - TDSON-8 |
5000: USD0.5097 130000: USD0.4716
|
130000 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3G
|
Infineon Technologies AG |
TDSON-8 |
|
1622 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
BSC123N08NS3G
|
Infineon Technologies AG |
OptiMOS™3 Power-Transistor |
90: USD0.566 220: USD0.464 335: USD0.45 460: USD0.435 595: USD0.421 800: USD0.377
|
120434 |
BSC123N08NS3GATMA1
|
Infineon Technologies AG |
MOSFET N-CH 80V 55A TDSON-8 |
90: USD0.566 220: USD0.464 335: USD0.45 460: USD0.435 595: USD0.421 800: USD0.377
|
120400 |
|
|