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![MJ16018 MJW16018 ON1986](Maker_logo/motorola_inc.GIF)
MOTOROLA[Motorola, Inc] ON Semiconductor Motorola Mobility Holdings, Inc.
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Part No. |
MJ16018 MJW16018 ON1986
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OCR Text |
...
hFE, DC CURRENT GAIN 100 70 50 baker Clamped (IC = 5 Adc, IB1 = 2 Adc, VBE(off) = 2 Vdc, VCE(pk) = 400 Vdc) PW = 25 s baker Clamped (IC = 5 Adc, VCC = 250 Vdc, IB1 = 2 Adc, IB2 = 2 Adc, RB2 = 3 , PW = 25 s, Duty Cycle 2%) Characteristic
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Description |
Power 10A 800V NPN From old datasheet system NPN Silicon Power Transistors POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AE
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File Size |
366.44K /
8 Page |
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Vishay
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Part No. |
BUF640A BUF640 BUF640_A
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OCR Text |
...hay Telefunken
10 unsaturated (baker clamp) R-load IC = 2.5A, IB1 = 0.5A t f - Fall Time ( m s) 1.0 unsaturated (baker clamp) R-load IC = 2.5A, IB1 = 0.5A
8 ts - Storage Time ( m s)
0.8 0.6
6
Tj = 125C 0.4 Tj = 25C 0.2
4 Tj ... |
Description |
Silicon NPN High Voltage Switching Transistor From old datasheet system
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File Size |
95.29K /
9 Page |
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it Online |
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TEMIC[TEMIC Semiconductors]
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Part No. |
BUF744
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OCR Text |
...s vs. -IB2/IB1
10 unsaturated (baker clamp) R-load IC = 3A, IB1 = 0.6A t f - Fall Time ( m s) 1.0
Figure 14. tf vs. -IB2/IB1
8 ts - Storage Time ( m s)
0.8 0.6
unsaturated (baker clamp) R-load IC = 3A, IB1 = 0.6A
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4 Tj =... |
Description |
Silicon NPN High Voltage Switching Transistor
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File Size |
132.61K /
9 Page |
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it Online |
Download Datasheet
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Price and Availability
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