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Toshiba Electronic Devices & Storage Corporation |
Part No. |
TRS15N120HB
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Description |
SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, 2 in 1, TO-247
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Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
Part No. |
TW045N120C
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Description |
N-ch SiC MOSFET, 1200 V, 40 A, 0.059 Ω@18 V, TO-247
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Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
Part No. |
TW015N120C
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Description |
N-ch SiC MOSFET, 1200 V, 100 A, 0.020 Ω@18 V, TO-247
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Tech specs |
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Official Product Page
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INFINEON[Infineon Technologies AG]
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Part No. |
SKW25N120
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Description |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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File Size |
333.32K /
13 Page |
View
it Online |
Download Datasheet
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Bom2Buy.com

Price and Availability
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(CHINA HK & SZ)
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Part: 5N20V |
Maker: ST |
Pack: TSSOP/8P |
Stock: 3876 |
Unit price
for : |
50: $0.31 |
100: $0.30 |
1000:
$0.28 |
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