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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TRS15N120HB
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| Description |
SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, 2 in 1, TO-247
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW045N120C
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| Description |
N-ch SiC MOSFET, 1200 V, 40 A, 0.059 Ω@18 V, TO-247
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW015N120C
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| Description |
N-ch SiC MOSFET, 1200 V, 100 A, 0.020 Ω@18 V, TO-247
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| Tech specs |
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Official Product Page
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IXYS, Corp.
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| Part No. |
IXGA15N120C
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| Description |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 30A I(C) | TO-263AA 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 30A条一（c）|63AA
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| File Size |
138.19K /
2 Page |
 View
it Online |
Download Datasheet
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Bom2Buy.com
Price and Availability
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TECHNOLOGY
(CHINA HK & SZ)
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| Part: 5N20V |
| Maker: ST |
| Pack: TSSOP/8P |
| Stock: 3876 |
| Unit price
for : |
|
50: $0.31 |
|
100: $0.30 |
| 1000:
$0.28 |
|
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