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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TRS15N120HB
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| Description |
SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, 2 in 1, TO-247
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW045N120C
|
| Description |
N-ch SiC MOSFET, 1200 V, 40 A, 0.059 Ω@18 V, TO-247
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW015N120C
|
| Description |
N-ch SiC MOSFET, 1200 V, 100 A, 0.020 Ω@18 V, TO-247
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| Tech specs |
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Official Product Page
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IXYS, Corp.
IXYS[IXYS Corporation]
|
| Part No. |
IXSX35N120AU1
|
| Description |
High Voltage IGBT with Diode(VCES200V，VCE(sat)4V的高电压绝缘栅双极晶体管(带二极管 70 A, 1200 V, N-CHANNEL IGBT, TO-247
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| File Size |
86.77K /
5 Page |
 View
it Online |
Download Datasheet
|
|
Bom2Buy.com
Price and Availability
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TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor |
| Part: 5N20V |
| Maker: ST |
| Pack: TSSOP/8P |
| Stock: 3876 |
| Unit price
for : |
|
50: $0.31 |
|
100: $0.30 |
| 1000:
$0.28 |
|
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