rs1d - t - rs1m - t tai wan semiconductor 1 version: c 170 2 1a, 200v - 1000v surface mount fast recovery rectifier features glass passivated junction chip ideal for automated placemen t low forward voltage drop fast switching for high efficiency compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec halogen - free according to iec 61249 - 2 - 21 applications switching mode power supply (smps) adapters lighting application c onverter mechanical data case: do - 214ac (sma) molding compound meets ul 94v - 0 flammability rating moisture sensitivity level: level 1, per j - std - 020 packing code with suffix "g" means green compound (halogen - free) terminal: matte tin plated leads, solderable per j - std - 002 meet jesd 201 class 1a whisker test polarity: as marked weight: 0.06 g (approximately) key parameters p arameter value unit i f(av) 1 a v rrm 2 0 0 - 10 0 0 v i fsm 3 0 a t j max 1 50 c package do - 214ac (sma) configuration single die do - 214ac (sma) absolute m aximum ratings ( t a = 25 c unless otherwise noted ) p arameter s ymbol r s1d - t r s1g - t r s1j - t r s1k - t r s1m - t unit marking code on the device rs1d rs1g rs1j rs1k rs1m r epetitive peak reverse voltage v rrm 200 400 600 800 1000 v r everse voltage, total rms value v r(rms) 140 280 420 560 700 v maximum dc blocking voltage v dc 200 400 600 800 1000 v f orward current i f(av) 1 a surge p eak forward current, 8.3 ms single half sine - wave superimposed on rated load per diode ) i fsm 30 a junction t emperature t j - 55 to +1 50 c storage temperature t stg - 55 to +1 50 c
rs1d - t - rs1m - t tai wan semiconductor 2 version: c 170 2 thermal performance p arameter s ymbol l imit unit junction - to - a mbient thermal r esistance r ? j a 105 c /w junction - to - case thermal r esistance r ? j c 32 c /w electrical specifications ( t a = 25 c unless otherwise noted ) parameter conditions symbol t yp m ax u nit forward voltage per diode (1) i f = 1 a, t j = 25 c v f - 1.3 v reverse current @ rated v r per diode (2) t j = 25 c i r - 5 a t j = 125 c - 50 a junction c apacitance 1 mhz, v r =4.0v c j 10 - pf reverse recovery time r s1d - t i f =0.5a , i r =1.0a i rr =0.25a t rr - 150 ns r s1 g - t r s1 j - t - 250 ns r s1 k - t - 500 ns r s1 m - t notes: 1. pulse test with pw=0.3 ms 2. pulse test with pw= 30 ms ordering information part no. packing code packing code suffix package packing r s1x - t (note 1, 2) r 3 g sma 1,800 / 7" plastic reel r 2 sma 7,500 / 13" paper reel note s : 1. "x" defines voltage from 200v ( r s1d - t ) to 10 00v ( r s1 m - t ) 2. whole series with green compound (halogen - free) example p/n example p/n part no. packing code packing code suffix description rs1m - t r3g rs1m - t r3 g green compound
rs1d - t - rs1m - t tai wan semiconductor 3 version: c 170 2 characteristics curves (t a = 25c unless otherwise noted) fig1. forward current derating curve fig2. typical junction capacitance fig3. typical reverse characteristics fig4. typical forward characteristics 0 0.5 1 1.5 0 25 50 75 100 125 150 175 lead temperature ( c) resistive or inductive load 1 10 100 1 10 100 reverse voltage (v) f=1.0mhz vsig=50mvp - p 0.001 0.01 0.1 1 10 0 20 40 60 80 100 120 140 t j =25 c t j =100 c t j =150 c 0.1 1 10 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 pulse width=300s 1% duty cycle t j =25 c t j =125 c capacitance (pf) instantaneous reverse current ( a ) percent of rated peak reverse voltage (%) instantaneous forward current (a) (a) 0.001 0.01 0.1 1 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 pulse width t j =25 c t j =125 c uf1dlw forward voltage (v) average forward current (a)
rs1d - t - rs1m - t tai wan semiconductor 4 version: c 170 2 0 10 20 30 40 50 1 10 100 peak forward surge current (a) number of cycles at 60 hz 8.3ms single half sine wave characteristics curves (t a = 25c unless otherwise noted) fig5. m aximum n on - repetitive f orward s urge c urrent fig6. reverse recovery time characteristic and test circuit diagram
rs1d - t - rs1m - t tai wan semiconductor 5 version: c 170 2 package outline dimensions do - 214ac (sma) suggested pad layout marking diagram p/n = marking code g = green compound yw = date code f = factory code dim unit (mm) unit (inch) min max min max a 1.27 1.58 0.050 0.062 b 4.06 4.60 0.160 0.181 c 2.29 2.83 0.090 0.111 d 1.99 2.50 0.078 0.098 e 0.90 1.41 0.035 0.056 f 4.95 5.33 0.195 0.210 g 0.10 0.20 0.004 0.008 h 0.15 0.31 0.006 0.012 symbol unit (mm) unit (inch) a 1.68 0.066 b 1.52 0.060 c 3.93 0.155 d 2.41 0.095 e 5.45 0.215
rs1d - t - rs1m - t tai wan semiconductor 6 version: c 170 2 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitne ss for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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