t-f , d na. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . silico n np n powe r transistor s telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 d44td3/4/ 5 descriptio n ? collector-emitte r sustainin g voltage - : v ce o(sus) = soov(min) - d44td 3 = 350v(min) - d44td 4 = 400v(min) - d44td 5 ? hig h switchin g spee d ? lo w saturatio n voltag e application s ? designe d fo r switchin g regulators , hig h resolutio n deflectio n circuits , inverter s an d moto r drivers . absolut e maximu m ratings(t a =25'c ) symbo l vce v vce o veb o i c ic m p c t j tst g paramete r d44td 3 collector-emitte r voltag e d44td 5 d44td 3 collector-emitte r voltag e d44td 5 emitter-bas e voltag e collecto r current-continuou s collecto r current-pea k collecto r powe r dissipatio n @ t 9^ p 1 c- " < - junctio n temperatur e storag e temperatur e rang e valu e 40 0 50 0 60 0 30 0 35 0 40 0 5 4 8 5 0 15 0 -65-15 0 uni t v v v aa w - c ? c therma l characteristic s symbo l rt h j- c paramete r ma x therma l resistance , junctio n t o cas e 1.5 6 uni t 'cm / -!/?% ? 2 i ^ 1 ^ 1 pi n 1.bas e t 2 . collecto r 1 i i 3 . emitte r 1 2 3 to-220 c packag e 1 a ^ > m u - ,.,?. q ^ h : jow s . . k *t - i c 4 h p g [* - di m a b c r > f g h t j k l q h s u v f 5o&' < i m m wi n 15.7 0 9.9 0 4.2 0 0.7 0 3.4 0 4.9 8 2.7 0 0.4 4 13.2 0 1.1 0 2.7 0 2.5 0 1.2 9 6.4 5 8.6 6 ma x 15.9 0 10.1 0 4.4 0 0.9 0 3.6 0 5.1 8 2.9 0 0.4 6 13.4 0 1.3 0 2.9 0 2.7 0 1.3 1 6.6 5 8.8 6 v t t n j semi-conductor s reserve s th e righ t t o chang e test conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o h e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
silico n np n powe r transistor s d44td3/4/ 5 electrica l characteristic s t c =25' c unles s otherwis e specifie d symbo l vceo(sus ) vce(sat ) vbe(sat ) ice v ieb o mf e paramete r collector-emitte r sustainin g voltag e d44td 3 d44td 4 d44td 5 collector-emitte r saturatio n voltag e base-emitte r saturatio n voltag e collecto r cutof f curren t d44td 3 d44td 4 d44td 5 emitte r cutof f curren t d c curren t gai n condition s i c =0.1a;i b = 0 lc = 2a ; i b = 0. 4 a lc = 2a ; i b = 0.4 a vce=400v;v b e(off)=1.5 v vce = 500v ; v b e(o(f) = 1.5 v v ce = 600v;v b e( 0 ff) = 1.5 v veb = 6v ; l c = 0 lc=2a ; v ce =3 v mi n 30 0 35 0 40 0 5 ma x 1. 0 1. 5 0. 1 0. 1 0. 1 1. 0 uni t v v v m a m a downloaded from: http:///
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