cystech electronics corp. spec. no. : c217n3 issued date : 2013.06.26 revised date : page no. : 1/8 btpa56n3 cystek product specification pnp epitaxial planar transistor btpa56n3 features ? low v ce (sat), v ce (sat)=-0.07 v (typ), at i c / i b = -100ma / -10ma ? excellent current gain characteristics ? pb-free lead plating and halogen-free package symbol outline sot-23 btpa56n3 b base c collector e emitter absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo -80 collector-emitter voltage v ceo -80 emitter-base voltage v ebo -5 v collector current (dc) i c -500 ma collector current (pulse) i cp -1 (note 1) a base current i b -200 ma power dissipation 0.225 power dissipation p d 0.35 (note 2) w operating junction and storage temp erature range tj ; tstg -65~+150 c
cystech electronics corp. spec. no. : c217n3 issued date : 2013.06.26 revised date : page no. : 2/8 btpa56n3 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-ambient, max r th,j-a 556 c/w thermal resistance, junction-to-ambient, max (note 2) r th,j-a 357 c/w note : 1. single pulse , pw=300 s, duty cycle 2%. 2. device mounted on fr-4 board 1.6? j 1.6? j 0.06? . characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo -80 - - v i c =-100 a, i e =0 bv ceo -80 - - v i c =-1ma, i b =0 bv ebo -5 - - v i e =-100 a, i c =0 i cbo - - -100 na v cb =-80v, i e =0 i ces - - -100 na v cb =-60v, i e =0 i ebo - - -100 na v eb =-5v, i c =0 *v ce(sat) - -70 -250 mv i c =-100ma, i b =-10ma *v be(sat) - -0.8 -1.2 v i c =-100ma, i b =-10ma *v be(on) - -0.73 -1.2 v v ce =-1v, i c =-100ma *h fe 1 100 - - - v ce =-1v, i c =-10ma *h fe 2 100 - - - v ce =-1v, i c =-100ma f t 50 200 - mhz v ce =-1v, i c =-100ma, f=100mhz cob - 7 - pf v cb =-10v, f =1mhz *pulse test : pulse width 380 s, duty cycle 2% ordering information device package shipping BTPA56N3-0-T1-G sot-23 (pb-free lead plating an d halogen-free package) 3000 pcs / tape & reel
cystech electronics corp. spec. no. : c217n3 issued date : 2013.06.26 revised date : page no. : 3/8 btpa56n3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.05 0.1 0.15 0.2 0.25 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 200ua 300ua 400ua 500ua 1ma -ib=100ua emitter grounded output characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 1ma 1.5ma 2.5ma 5ma -ib=500ua emitter grounded output characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 4ma 6ma 8ma 20ma -ib=2ma emitter grounded output characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 10ma 25ma 50ma -ib=5ma current gain vs collector current 10 100 1000 0.1 1 10 100 1000 -ic, collector current(ma) current gain---hfe ta=125c ta= 75c ta= 25c ta=0c ta=-40c vce=-1v current gain vs collector current 10 100 1000 0.1 1 10 100 1000 -ic, collector current(ma) current gain---hfe ta=125c ta=75c ta=25c ta=0c ta=-40c vce=-2v
cystech electronics corp. spec. no. : c217n3 issued date : 2013.06.26 revised date : page no. : 4/8 btpa56n3 cystek product specification typical characteristics(cont.) current gain vs collector current 10 100 1000 0.1 1 10 100 1000 -ic, collector current(ma) current gain---hfe ta=125c ta=75c ta=25c ta=0c ta=-40c vce=-5v saturation voltage vs collector current 10 100 1000 0.1 1 10 100 1000 -ic, collector current(ma) saturation voltage---(mv) ta=125c ta=75c ta=25c ta=0c ta=-40c vcesat@ic=10ib saturation voltage vs collector current 10 100 1000 0.1 1 10 100 1000 -ic, collector current(ma) saturation voltage---(mv) ta=125c ta=75c ta=25c ta=0c ta=-40c vcesat@ic=20ib saturation voltage vs collector current 10 100 1000 0.1 1 10 100 1000 -ic, collector current(ma) saturation voltage---(mv) ta=125c ta=75c ta=25c ta=0c ta=-40c vcesat@ic=50ib saturation voltage vs collector current 100 1000 10000 0.1 1 10 100 1000 -ic, collector currentma) saturation voltage---(mv) vbesat@ic=10ib ta=-40c ta=0c ta=25c ta=75c ta=125c on voltage vs collector current 100 1000 10000 0.1 1 10 100 1000 -ic, collector current(ma) on voltage---(mv) vbeon@vce=-1v ta=-40c ta=0c ta=25c ta=75c ta=125c
cystech electronics corp. spec. no. : c217n3 issued date : 2013.06.26 revised date : page no. : 5/8 btpa56n3 cystek product specification typical characteristics(cont.) capacitance vs reverse-biased voltage 1 10 100 0.1 1 10 100 -vr, reverse-biased voltage(v) capacitance---(pf) cib cob cutoff frequency vs collector current 10 100 1000 1 10 100 1000 -ic, collector current(ma) cutoff frequency---ft(mhz) vce=-1v power derating curve 0 50 100 150 200 250 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(mw)
cystech electronics corp. spec. no. : c217n3 issued date : 2013.06.26 revised date : page no. : 6/8 btpa56n3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c217n3 issued date : 2013.06.26 revised date : page no. : 7/8 btpa56n3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c217n3 issued date : 2013.06.26 revised date : page no. : 8/8 btpa56n3 cystek product specification sot-23 dimension style : pin 1.base 2.emitter 3.collector 3-lead sot-23 plastic surface mounted package cystek package code: n3 marking: product code date code: year+month year: 3 2003, 4 2004 month: 1 1, 2 2, ??? 9 9, a 10, b 11, c 12 2g *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1102 0.1204 2.80 3.04 j 0.0032 0.0079 0.08 0.20 b 0.0472 0.0669 1.20 1.70 k 0. 0118 0.0266 0.30 0.67 c 0.0335 0.0512 0.89 1.30 l 0.0335 0.0453 0.85 1.15 d 0.0118 0.0197 0.30 0.50 s 0.0830 0.1161 2.10 2.95 g 0.0669 0.0910 1.70 2.30 v 0.0098 0.0256 0.25 0.65 h 0.0000 0.0040 0.00 0.10 l1 0. 0118 0.0197 0.30 0.50 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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