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| jmnic product specification silicon pnp power transistors 2SA1329 description ? with to-220 package ? complement to type 2sc3346 ? low collector saturation voltage ? high speed switching time applications ? high current switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -6 v i c collector current -12 a i b base current -2 a p c collector power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220) and symbol
jmnic product specification 2 silicon pnp power transistors 2SA1329 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ,i b =0 -80 v v cesat collector-emitter saturation voltage i c =-6a; i b =-0.3a -0.2 -0.4 v v besat base-emitter saturation voltage i c =-6a; i b =-0.3a -0.9 -1.2 v i cbo collector cut-off current v cb =-80v; i e =0 -10 | a i ebo emitter cut-off current v eb =-6v; i c =0 -10 | a h fe-1 dc current gain i c =-1a ; v ce =-1v 70 240 h fe-2 dc current gain i c =-6a ; v ce =-1v 40 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 400 pf f t transition frequency i c =-1a ; v ce =-5v 50 mhz switching times t on turn-on time 0.3 | s t s storage time 1.0 | s t f fall time i b1 =- i b2 =-0.3a r l =5 |? ;v cc =-30v 0.5 | s ? h fe-1 classifications o y 70-140 120-240 jmnic product specification 3 silicon pnp power transistors 2SA1329 package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm) jmnic product specification 4 silicon pnp power transistors 2SA1329 |
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