mb2s, mb4s, mb6s www.vishay.com vishay general semiconductor revision: 19-aug-13 1 document number: 88661 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 miniature glass passivated fast recovery surface mount bridge rectifier features ? ul recognition, file number e54214 ? saves space on printed circuit boards ? ideal for automated placement ? high surge current capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications general purpose use in ac/dc bridge full wave rectification for power supply, lighting ballas ter, battery charger, home appliances, office equipment, and telecommunication applications. mechanical data case: to-269aa (mbs) molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked on body notes (1) on glass epoxy pcb mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads (2) on aluminum substrate pcb with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad primary characteristics package to-269aa (mbs) i f(av) 0.5 a v rrm 200 v, 400 v, 600 v i fsm 35 a i r 5 a v f at i f = 0.4 a 1.0 v t j max. 150 c diode variations quad ~ ~ to-269aa (mbs) ~ ~ maximum ratings (t a = 25 c unless otherwise noted) parameter symbol mb2s mb4s mb6s unit device marking code 2 4 6 maximum repetitive peak reverse voltage v rrm 200 400 600 v maximum rms voltage v rms 140 280 420 v maximum dc blocking voltage v dc 200 400 600 v maximum average forward output rectified current (fig. 1) on glass-epoxy pcb (1) i f(av) 0.5 a on aluminum substrate (2) 0.8 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 35 a rating for fusing (t < 8.3 ms) i 2 t5.0a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c
mb2s, mb4s, mb6s www.vishay.com vishay general semiconductor revision: 19-aug-13 2 document number: 88661 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) on glass epoxy pcb mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads (2) on aluminum substrate pcb with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad ? ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - derating curve for output rectified current fig. 2 - maximum non-repetitive peak forward surge current per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol mb2s mb4s mb6s unit maximum instantaneous forward ? voltage per diode i f = 0.4 a v f 1.0 v maximum dc reverse current at rated dc blocking voltage per diode t a = 25 c i r 5.0 a t a = 125 c 100 typical junction capacitance per di ode 4.0 v, 1 mhz c j 13 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol mb2s mb4s mb6s unit typical thermal resistance r ? ja (1) 85 c/w r ? ja (2) 70 r ? jl (1) 20 ordering information (example) preferred p/n unit weight (g ) preferred package code ba se quantity delivery mode mb2s-e3/45 0.22 45 100 tube mb2s-e3/80 0.22 80 3000 13" diam eter paper tape and reel 0 20 40 60 80 100 120 140 160 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 al u min u m s u bstrate glass epoxy pcb resisti v e or ind u cti v e load a v erage for w ard rectified c u rrent (a) ambient temperat u re (c) 1 10 100 0 5 10 15 20 25 30 35 f = 50 hz f = 60 hz t a = 40 c single half sine-wa v e nu mber of cycles peak for w ard s u rge c u rrent (a) 1.0 cycle
mb2s, mb4s, mb6s www.vishay.com vishay general semiconductor revision: 19-aug-13 3 document number: 88661 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical forward voltage characteristics per diode fig. 4 - typical reverse leakage ch aracteristics per diode fig. 5 - typical junction c apacitance per diode package outline dimensions in inches (millimeters) 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0.01 0.1 1 10 t j = 150 c t j = 25 c p u lse width = 300 s 1 % d u ty cycle instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0 20 40 60 80 100 0.01 0.1 1 10 100 t j = 125 c t j = 25 c percent of rated peak re v erse v oltage (%) instantaneo u s re v erse leakage c u rrent (a) 0.1 1 10 100 0 5 10 15 20 25 30 1000 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 0.029 (0.74) 0.017 (0.43) 0 to 8 0.049 (1.24) 0.039 (0.99) 0.062 (1.57) 0.058 (1.47) 0.016 (0.41) 0.006 (0.15) 0.018 (0.46) 0.014 (0.36) 0.008 (0.20) 0.004 (0.10) 0.114 (2.90) 0.110 (2.80) 0.058 (1.47) 0.054 (1.37) 0.252 (6.40) 0.272 (6.90) 0.106 (2.70) 0.090 (2.30) 0.0075 (0.19) 0.0065 (0.16) 0.105 (2.67) 0.095 (2.41) 0.195 (4.95) 0.179 (4.55) 0.144 (3.65) 0.161 (4.10) 0.205 (5.21) 0.195 (4.95) 0.114 (2.90) 0.094 (2.40) 0.038 (0.96) 0.019 (0.48) 0.272 max. (6.91 max.) 0.030 mi n . (0.76 mi n .) 0.023 mi n . (0.58 mi n .) 0.105 (2.67) 0.095 (2.41) to-269aa (mbs) mounting pad layout
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