features low cost diffused junction low leakage and similar solvents mechanical data case: jedec do-15l, molded plastic method 208 mounting: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,50 hz,resistive or inductive load. for capacitive load,derate by 20%. max imum peak r epetitiv e r ev er s e v oltage v rrm v max imum rms v oltage v rms v maximum dc blocking voltage v dc v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak forw ard surge current 10ms single half-sine-w ave superimposed on rated load @t j =125 max imum ins tantaneous f or w ar d v oltage @ 1.1a v f v maximum reverse current @t a =25 a t r at e d d c b l o c k i n g v o l ta g e @ t a =100 maximum reverse recovery time (note 1) t rr ns t y p i c al j u n c t i on c a p a c i t a n c e ( n o te 2 ) c j pf t y p i c al t h e r m a l r e s i s ta n c e ( n o t e 3 ) r jl <d operating junction temperature range t j storage temperature range t stg 2. measured at 1.0mh z and applied rev erse v oltage of 4.0v dc. terminals: axial leads,solderable per mil-std-202, 600 420 600 ru2am RU2M 280 400 400 3. thermal resistance junction to ambient . easily cleaned with freon, alcohol, lsopropand polarity: color band denotes cathode weight: 0.017 ounces, 0.48 grams i r 100 i f(av) i fsm - 55 ----- + 150 note: 1.measured with i f =0.5a, i r =1a, i rr =0.25a. 1.2 20.0 RU2M(z) --- ru2am(z) - 55 ----- + 150 h i gh ef f i c i e n c y r e c t i f i er s v o l t a g e r a n g e : 400 - - - 600 v current: 1.1 a maximum ratings and electrical characteristics do - 1 5 l low forward voltage drop high current capab ility 20 15 units 15 a 1.1 a a 10.0 300.0 dimensions in millimeters www.diode.kr diode semiconductor korea
amperes amperes ambient temperature, average forward rectified current instantaneous forward current instantaneous forward voltage, volts peak forward surge current amperes n u m b e r o f c y c l e s a t 60 h z junction capacitance,pf r e v e r s e v o l t a g e , v o l t s RU2M(z)--- ru2am(z) fi g.1 -- test ci rcuit di agram and reverse recovery ti me characteristic set time base for 10/20 ns/cm fig.2 -- typical forward characteristic fig.3 -- forward derating curve notes:1.rise time = 7ns max.input impedance =1m . 22pf. jjjj 2.rise time =10ns max.source impedance=50 . f i g . 2 - - t y p i c a l f o r w a r d c h ar a c t e r i s t i c f i g . 3 - - typical junction capacitance pulse generator (note2) d.u.t. 1 nonin- ductive 50 n 1. 10 n1. oscilloscope (note1) (+) 25vdc (approx) (-) - 1 . 0 a - 0 . 25a 0 + 0 . 5 a t rr 1cm 1 0 5 10 15 20 5 1 0 5 0 50 single phase half wave 60hz resistive or inductive load 0 0 25 0 . 3 0 . 6 1 . 2 0 . 9 1 . 5 75 1 0 0 1 5 0 125 t j =25 1 2 4 10 20 40 60 100 200 0 . 1 0 . 2 0 . 4 1 2 4 10 40 1 0 0 20 RU2M ru2am 0 0.01 0.04 0.1 1.0 10 1 0 0 t j =25 pulse width=300 diode semiconductor korea www.diode.kr
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