dcr5240h52 phase control thyristor preliminary information ds 6160 - 1 september 2014 ( ln31988 ) 1 /10 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repetitive peak voltages v drm and v rrm v conditions dcr5240h52 * dcr 5 24 0 h 50 dcr 524 0 h 48 5200 5000 4800 t vj = - 40c to 125c, i drm = i rrm = 6 00ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. * 50 00 v @ - 40 o c, 52 00v @ 0 o c ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr5240h52 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v drm 52 00v i t(av) 524 0 a i tsm 77800 a dv/dt* 2000v/s di/dt 200a/s * higher dv/dt selections available outline type code: h (see package details for further information) fig. 1 package outline
semiconductor dcr5240h52 2 /10 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 524 0 a i t(rms) rms value - 8230 a i t continuous (direct) on - state current - 7290 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 77.80 ka i 2 t i 2 t for fusing v r = 0 30.27 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.00 4255 c/w single side cooled anode dc - 0. 008 c/w cathode dc - 0.0 093 c/w r th(c - h) thermal resistance C case to heatsink clamping force 135 .0kn double side - 0.00 09 c/w (with mounting compound) single side - 0.00 18 c/w t vj virtual junction temperature blocking v drm / v rrm - 12 5 c t stg storage temperature range - 55 125 c f m clamping force 120 155 kn
semiconductor dcr5240h52 3 /10 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 600 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open - 2000 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) repetitive 50hz - 200 a/s gate source 30v, 10 ? , non - repetitive - 500 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage C low level 500 to 40 00a at t case = 125c - 0. 975 v threshold voltage C high level 40 00 to 8 000a at t case = 125c - 1. 222 v r t on - state slope resistance C low level 500a to 40 00a at t case = 125c - 0.1 75 m ? on - state slope resistance C high level 40 00a to 8 000a at t case = 125c - 0.118 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3 s t r = 0.5s, t j = 25c t q turn - off time i t = 3000a, t j = 125c, v r = 200v, di/dt = 1a/s, 500 s dv dr /dt = 20v/s linear q s stored charge i t = 3000a, t j = 125c, di/dt C 1a/s, v rpeak ~31 00v, v r ~ 21 00v 2230 4290 c i rr reverse recovery current 38 52 a i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5a - 300 ma
semiconductor dcr5240h52 4 /10 www.dynexsemi.com gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at 50% v drm, t case = 125c 0.4 v i gt gate trigger current v drm = 5v, t case = 25c 350 ma i gd gate non - trigger current at 50% v drm, t case = 125c 10 ma curves fig.2 maximum & minimum on - state characteristics v tm equation where a = 2.0 022 b = - 0.2464 v tm = a + bln (i t ) + c.i t +d. ? i t c = - 0.0000 027 d = 0.0 2699 these values are valid for t j = 125c for i t 500a to 8 000a 0 2000 4000 6000 8000 10000 12000 0.50 1.00 1.50 2.00 2.50 instantaneous on state current , i t - (a) instantaneous on state voltage, v t - (v) min 25 c max 25 c min 125 c max 125 c
semiconductor dcr5240h52 5 /10 www.dynexsemi.com fig.3 on - state power dissipation C sine wave fig.4 maximum permissible case temperature, double side cooled C sine wave fig.5 maximum permissible heatsink temperature, double side cooled C sine wave fig. 6 on - state power dissipation C rectangular wave 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 0 2000 4000 6000 mean power dissipation (w) mean on - state current, it(av) - (a) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 2000 4000 6000 8000 maximum permissible case temperature - (oc) mean on - state current, it (av) - (a) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 2000 4000 6000 8000 maximum permissable heatsink temp, oc mean on - state current. it (av) - (a) 180 120 90 60 30 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 0 2000 4000 6000 8000 mean power dissipation - (w) mean on - state current, it(av) - (a) d.c. 180 120 90 60 30
semiconductor dcr5240h52 6 /10 www.dynexsemi.com fig.7 maximum permissible case temperature, double side cooled C rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled C rectangular wave fig.9 maximum (limit) transient thermal impedance C junction to case (c/kw) )] / exp( 1 ( [ 4 1 i i i i th t t r z ? ? ? ? ? ? 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 2000 4000 6000 8000 10000 maximum permissible case temperature - (oc) mean on - state current, it (av) - (a) d.c. 180 120 90 60 30 0 20 40 60 80 100 120 0 2000 4000 6000 8000 10000 maximum permissable heatsink temp, oc mean on - state current. it (av) - (a) d.c. 180 120 90 60 30 0 2 4 6 8 10 12 0.001 0.01 0.1 1 10 100 transient thermal resistance (k/kw) time (s) double side cooled anode side cooled cathode side cooled 1 2 3 4 double side cooled r i (c/kw) 1.24786361 0.8334561 0.60621847 1.56769894 t i (s) 0.67007122 0.14563223 0.01981569 1.28702484 anode side cooled r i (c/kw) 0.51177271 1.94595762 0.91956601 4.66635596 t i (s) 2.89822124 0.50524092 0.0358286 10.6466908 cathode side cooled r i (c/kw) 2.41723953 1.53684913 0.62607497 4.9592331 t i (s) 3.44130269 0.26943359 0.02350127 10.172444 d r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling d z th (z) d z th (z) d z th (z) q sine. rect. q sine. rect. q sine. rect. 180 0.38 0.26 180 0.32 0.23 180 0.33 0.23 120 0.44 0.37 120 0.36 0.31 120 0.38 0.33 90 0.49 0.43 90 0.41 0.36 90 0.43 0.37 60 0.54 0.49 60 0.45 0.40 60 0.47 0.43 30 0.58 0.55 30 0.48 0.45 30 0.51 0.48 15 0.60 0.58 15 0.49 0.48 15 0.52 0.51
semiconductor dcr5240h52 7 /10 www.dynexsemi.com fig.10 multi - cycle surge current fig.11 single - cycle surge current fig.12 stored charge fig.13 reverse recovery current 0 10 20 30 40 50 60 70 80 1 10 100 peak half sine forward current, i tsm - (ka) number of cycles at 50hz conditions: t j = 125 c v r = 0 pulse width = 10ms 0 10 20 30 40 50 60 0 20 40 60 80 100 120 140 160 180 200 220 240 260 1 10 100 i 2 t value - (ma2s) peak half sine forward current, i tsm - (ka) pulse width, t p - (ms) itsm i2t conditions: t j = 125 c v r = 0 0 5000 10000 15000 0 1 2 3 4 5 6 7 8 9 10 11 stored charge, qs - (uc) rate of decay of on state current, di/dt - (a/s) qs max = 4285.9*(di/dt) 0.4606 qs min = 2236.7*(di/dt) 0.5493 conditions: t j = 125 c v peak ~ 3100v v rm ~ 2100v snubber as appropriate to control reverse volts 0 50 100 150 200 250 300 350 0 1 2 3 4 5 6 7 8 9 10 11 reverse recovery current, i rr - (a) rate of decay of on state current, di/dt - (a/s) i rr max = 52.063*(di/dt) 0.7707 i rr min = 37.929*(di/dt) 0.8242 conditions: t j = 125 c v peak ~ 3100v v rm ~ 2100v snubber as appropriate to control reverse volts
semiconductor dcr5240h52 8 /10 www.dynexsemi.com fig14 gate characteristics fig. 15 gate characteristics 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 gate trigger voltage, v gt - (v) gate trigger current i gt , - (a) tj = 125 o c tj = 25 o c tj = - 40 o c preferred gate drive area upper limit lower limit 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger voltage, v gt - (v) gate trigger current, i gt - (a) lower limit upper limit 5w 10w 20w 50w 100w 150w - 40c
semiconductor dcr5240h52 9 /10 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. lead length: 420mm lead terminal connector: m4 ring package outline type code: h fig.16 package outline device maximum thickness (mm) minimum thickness (mm) dcrxxxxh42 35.15 34.28 dcr5240h52 35.27 34.4 dcr5890h52 35.27 34.4 dcr4420h65 35.3 34.7 dcr4660h65 35.3 34.7 dcr3640h85 35.65 35.05 dcr3980h85 35.65 35.05
semiconductor dcr5240h52 10 /10 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typograp hical errors. the information is provided without any w arranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. th e products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric char ge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the produ ct ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may in clude potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate ap plication design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless oth erwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, wh ich are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions @dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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