tsm0 26 na03 cr tai wan semiconductor 1 version: b1610 n - channel power mosfet 3 0 v, 1 68 a , 2.6 m features low r ds(on) to minimize conductive l oss low gate charge for fast p ower s witching 100% uis and r g t ested compliant to rohs d irective 2011/65/eu and in accordance to weee 2002/96/ec halogen - free according to iec 61249 - 2 - 21 a pplication dc - dc converters battery power management o r ing fet/load switching key performance parameters p arameter value unit v ds 3 0 v r ds(on) (max) v gs = 10v 2.6 m v gs = 4.5v 3.3 q g 4 1 nc pdfn 5 6 note : msl 1 (moisture sensitivity level) per j - std - 020 absolute m aximum ratings ( t a = 25 c unless otherwise noted ) p arameter s ymbol l imit unit drain - source voltage v ds 3 0 v gate - source voltage v gs 2 0 v continuous drain current (note 1) t c = 25c i d 168 a t a = 25c 24 pulsed drain current i dm 672 a single pulsed avalanche current (note 2) i as 37 a single pulsed avalanche energy (note 2) e as 205 mj total power dissipation t c = 25 c p d 125 w t c = 125 c 25 total power dissipation t a = 25 c p d 2.6 w t a = 125 c 0.5 operating junction and storage temperature range t j , t stg - 55 to +1 50 c thermal performance p arameter s ymbol l imit unit junction to case thermal resistance r ? j c 1 c /w junction to ambient thermal resistance r ? j a 48 c /w thermal performance note : r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistances. the case - thermal reference is defined at the solder mounting surface of the drain pins. r ? ja is guaranteed by design while r ? ca is determined by the users board design.
tsm0 26 na03 cr tai wan semiconductor 2 version: b1610 electrical specifications ( t a = 25 c unless otherwise noted ) parameter conditions symbol m in t yp m ax u nit static drain - source breakdown voltage v gs = 0v, i d = 250 a bv dss 30 -- -- v gate threshold voltage v gs = v ds , i d = 250 a v gs(th) 1. 2 1.65 2.5 v gate - source leakage current v gs = 20v, v ds = 0v i gss -- -- 100 na drain - source leakage current v g s = 0 v, v d s = 30 v i dss -- -- 1 a v g s = 0 v, v d s = 30 v t j = 1 25 c -- -- 100 drain - source on - state resistance (note 3) v gs = 10v, i d = 2 4 a r ds(on ) -- 1.9 2.6 m gs = 4.5 v, i d = 2 4 a -- 2.5 3.3 forward transconduct ance (note 3) v ds = 5 v, i d = 2 4 a g fs -- 68 -- s dynamic (note 4 ) total gate charge v gs = 10 v, v ds = 15v, i d = 2 4 a q g -- 41 -- nc total gate charge v gs = 4.5 v, v ds = 15v, i d = 2 4 a q g -- 21 -- gate - source charge q gs -- 7 -- gate - drain charge q gd -- 6.5 -- input capacitance v gs = 0v, v ds = 15 v f = 1.0mhz c iss -- 2540 -- pf output capacitance c oss -- 600 -- reverse transfer capacitance c r ss -- 200 -- g ate resistance f = 1 .0 mhz r g 0.2 0.8 1.6 switching (note 4 ) turn - on delay time v gs = 10v, v ds = 15 v, i d = 14 a, r g = 10 l = 1.07 d(on) -- 19.9 -- ns turn - on rise time t r -- 12.3 -- turn - off delay time t d(off) -- 61.3 -- turn - off fall time t f -- 18.0 -- source - drain diode forward voltag e (note 3 ) v gs = 0v , i s = 24 a v sd - - - - 1.2 v r everse recovery time i s = 24 a , di/dt = 100a/ rr -- 47 -- ns r everse recovery charge q rr -- 38 -- nc notes: 1. silicon limited cu rrent only . 2. l = 0.3 mh, v gs = 10v, v ds = 25v, r g = 25, i as = 37 a, starting t j = 25c 3. pulse test: pulse width 300s, duty cycle 2%. 4. switching time is essentially independent of operating temperature. ordering information part no. package packing tsm0 26 na03cr rlg pdfn 5 6 2,500pcs / 13 reel
tsm0 26 na03 cr tai wan semiconductor 3 version: b1610 0.6 0.8 1 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 0.001 0.0015 0.002 0.0025 0.003 0.0035 0.004 0 8 16 24 32 40 0 2 4 6 8 10 0 10 20 30 40 50 characteristics curves ( t a = 25c unless otherwise noted) output characteristics transfer characteristics on - resistance vs. drain current gate - source voltage vs. gate charge on - resistance vs. junction temperature on - resistance vs. gate - source voltage i d , drain current (a) v g s , gate to source voltage (v) v ds , drain to source voltage (v) r ds(on) , drain - source on - resistance ( ) i d , drain current (a) v g s , gate to source voltage (v) q g , gate charge (nc) r ds(on) , drain - source on - resistance (normali z ed) t j , junction temperature ( c) r ds(on) , drain - source on - resistance ( ) v g s , gate to source voltage (v) 150 25 v gs = 10 v v d s = 15 v i d =24 a v g s = 10 v i d =24 a v gs = 4.5 v - 55 0 8 16 24 32 40 0 0.5 1 1.5 2 2.5 3 v gs =10v v gs =5v v gs =4.5v v gs =4v v gs =3.5v v gs =3v 0 8 16 24 32 40 0 1 2 3 4 0 0.002 0.004 0.006 0.008 0.01 3 4 5 6 7 8 9 10 i d =24a i d , drain current (a)
tsm0 26 na03 cr tai wan semiconductor 4 version: b1610 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 0.8 0.9 1 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 1 10 100 1000 0.1 1 10 100 i d , drain current (a) v ds , drain to source voltage (v) r ds(on) characteristics curves ( t a = 25c unless otherwise noted) capacitance vs. drain - source voltage bv dss vs. junction temperature maximum safe operating are a , junction - to - case source - drain diode forward current vs. voltage normalized thermal transient impedance, junction - to - case normalized effective transient thermal impedance , z ? jc t, square wave pulse duration (sec) duty=0.5 duty=0.2 duty=0.1 duty=0.05 duty=0.02 duty=0.01 single c , capacitance (pf) v ds , drain to source voltage (v) bv dss (normalized) drain - source breakdown voltage t j , junction temperature (c) ciss coss crss i d =5ma single pulse r ? jc = 1 c /w t c =25 c single pulse r ? jc = 1 c /w i s , reverse drain current (a) v s d , body diode forward voltage (v) 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 25 duty = t 1 / t 2 t j = t c + p dm x z ? jc x r ? jc
tsm0 26 na03 cr tai wan semiconductor 5 version: b1610 package outline dimensions ( unit: millimeters ) p df n 5 6 suggested pad layout ( unit: millimeters ) marking diagram g = halogen free y = year code ww = week code (01~52) f = factory code tsc 026 n a03 gywwf
tsm0 26 na03 cr tai wan semiconductor 6 version: b1610 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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