, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 IRFF310 1.35a, 400v, 3.600 ohm, n-channel power mosfet this n-channel enhancement mode silicon gate power field effect transistor is an advanced power mosfet designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. all of these power mosfets are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. they can be operated directly from integrated circuits. feafares ? 1.35a, 400v ? rds(on) = 3.600q ? single pulse avalanche energy rated ? soa is power dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance ordering information part number IRFF310 package to-205af brand IRFF310 symbol note: when ordering, include the entire part number. packaging jedec to-205af drain (case) source gate nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj seini-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
IRFF310 absolute maximum ratings tc = 25c, unless otherwise specified drain to source voltage (note 1 ) drain to gate voltage (res = 20ki2) (note 1 ) continuous drain current pulsed drain current (note 3) gate to source voltage maximum power dissipation . . . linear derating factor single pulse avalanche energy rating (note 4) operating and storagetemperature . . ... maximum temperature for soldering leads at 0 063in (1 6mm) from case for 10s package body for 10s see techbrief 334 caution: stresses above those listed in "absolute maximum ratings" may cause permanent damage to vnc; in vpq pn ea<; ti pkg the device. this is a IRFF310 400 400 1 35 5 5 +20 15 0 12 150 -55 to 1 50 300 260 units v v a a v w w/c mj c c c stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note: 1. tj = 25cto125c. electrical specifications tc = 25c, unless otherwise specified parameter drain to source breakdown voltage gate to threshold voltage zero-gate voltage drain current on-state drain current (note 2) gate to source leakage current drain to source on resistance (note 2) forward transconductance (note 2) turn-on delay time rise time turn-off delay time fall time total gate charge (gate to source + gate to drain) gate to source charge gate to drain "miller" charge input capacitance output capacitance reverse-transfer capacitance internal drain inductance internal source inductance thermal resistance junction to case thermal resistance junction to ambient symbol bvnss vgs(th) !dss !d(on) !gss rds(on) 9fs 'd(on) tr 'd(off) tf qg(tot) qgs qgd ciss coss crss ld ls rbjc r()ja test conditions vgs = ov, id = 250na (figure 10) vgs = vds. id = 250ua vds = rated bvdss, vgs = ov vds = o.s x rated bvdss, vgs = ov. tj = 125c vds > !d(on) x rds(on)max vgs = 10v vgs = 2ov vgs = 10v. !d = 0.8a (figures 8, 9) vds, = 10v, id = 1.2a (figure 12) vdd = 0-5 x rated bvnss- rl - 144.5u for bvoss - 4 rl - 1 26n for b vdss ~ 350^ switching times are essent operating temperature *g = 9.1ij, id = 1.35a, x3v, /(figures 17, 18), mosfet ally independent of vgs = 10v. !d = 1.35a, vds = 0.8 x rated bvdss, ig(ref) = 1.5ma (figures 14, 19, 20), gate charge is essentially independent of operating temperature vgs = ov, vds = 25v,f=1 measured from the drain lead, 5mm (0.2in) from header to center of die measured from the source lead, 5mm (0.2in) from header and source bonding pad 0mhz (figure 11) modified mosfet symbol showing the internal device inductances free air operation min 400 2.0 - - 1.35 - - 1.0 - - - - - - - - - - - - typ - - - - - - 3.3 1.2 3 10 5 8 6 3 3 135 35 8 5.0 15 - - max - 4.0 25 250 - 1100 3.600 10 20 10 15 7.5 - - - - - 8.33 175 units v v ua ma a na n s ns ns ns ns nc nc nc pf pf pf nh nh c/w c/w
IRFF310 source to drain diode specifications parameter continuous source to drain current pulse source to drain current (note 3) source to drain diode voltage (note 2) reverse recovery time reverse recovered charge symbol [so 'sdm vsd trr qrr test conditions modified mosfet symbol showing the integral reverse p-n junction rectifier ^~^ /i' -a t-053 ^^_^ ( u \ y s tj = 25c, isd = 1.35a, vgs = 0v (figure 13) tj = 150c, isd = 1-35a, dlsd/d, = looa/us tj = 150c, isd = 1.35a, dlsd/dt = 100a/|.is min - - - - - typ - - - 380 2.7 max 1.35 5.5 1.6 - - units a a v ns hc notes: 2. pulse test: pulse width < 30-o^s, duty cycle < 2%. 3. repetitive rating: pulse width limited by max junction temperature. see transient thermal impedance curve (figure 3). 4. vdd = 40v, start tj = 25c, l = 44.89nh, rg = 50h, peak ias = 1.35a (see figures 15, 16). typical performance curves tc = 25c, unless otherwise specified 5 o ot oc. 1.0 0.8 0.6 0.4 0.2 n \^ \ 50 100 150 tc, case temperature (c) figure 1. normalized power dissipation vs case temperature 1.4 < 1.2 k i 1- tt 3 0.8 1 '6 q 0 0.4 0.2 0 2 ^^j ^ ?^. ^ ?w^ ^x. \ 5 50 75 100 125 15 tc, case temperature (c) figure 2. maximum continuous drain current vs case temperature notes: duty factor: d = t-|/t2 peak tj = pdm x z9jc x rejc + tc rectangular pulse duration (lc) figure 3. normalized maximum transient thermal impedance
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