dmn2400ufb4 document number: ds32025 rev. 6 - 2 1 of 7 www.diodes.com may 2015 ? diodes incorporated dmn2400ufb4 20v n - channel enhancement mode mosfet features ? low on - resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? uitra - small surface mount package ? ultra - low package profile, 0.4mm maximum package height ? esd protected up to 1.5 kv ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: x2 - dfn1006 - 3 ? case material: molded plastic, "green" molding compound ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish ? nipdau over copper l eadframe ; solderable per mil - std - 202, method 208 ? weight: 0.00 1 grams ( a pproximate) ordering information (note 4 ) part number marking reel size (inches) tape width (mm) quantity per reel dmn2400ufb4 - 7 nc 7 8 3 , 000 dmn2400ufb4 - 7b nc 7 8 10,000 notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain < 900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http : //www.diodes.com/products/packages.html. x2 - dfn1006 - 3 top view package pin configuration bottom view s o u r c e e q u i v a l e n t c i r c u i t g a t e p r o t e c t io n d i o d e g a t e d r a in esd protected to 1.5kv d s g e4
dmn2400ufb4 document number: ds32025 rev. 6 - 2 2 of 7 www.diodes.com may 2015 ? diodes incorporated dmn2400ufb4 marking information dmn2400ufb4 - 7 dmn2400ufb4 - 7 b maximum ratings @ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 20 v gate - source voltage v gss 12 v continuous drain current (note 5 ) v gs = 4.5v steady state t a = + 25 c t a = + 85 c i d 0.75 0.55 a pulsed drain current (notes 5 & 6 ) i dm 3 a thermal characteristics @ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5 ) p d 0.47 m w thermal resistance, junction to ambient r ja 258 c/w operating and storage temperature range t j, t stg - 55 to +150 c notes: 5 . device mounted on fr - 4 pcb, with minimum recommended pad layout, single sided. 6 . device mounted on minimum recomm ended pad layout test board, 10 s pulse duty cycle = 1%. nc = part marking code nc nc nc top view bar denotes gate and source side nc nc nc nc top view bar denotes gate and source side nc from date code 1527 (yyww), this changes to : nc top view dot denotes drain side nc nc nc
dmn2400ufb4 document number: ds32025 rev. 6 - 2 3 of 7 www.diodes.com may 2015 ? diodes incorporated dmn2400ufb4 electrical characteristics @ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 20 gs = 0v, i d = 250 j = + 25c i dss ds = 20 v, v gs = 0v v ds = 5 v, v gs = 0v gate - source leakage i gss gs = 3 v, v ds = 0v gate - source leakage i gss gs = 4.5 v, v ds = 0v gate - source leakage i gss gs = 10 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) 0.5 ds = v gs , i d = 250 a ds (on) ? gs = 4.5v, i d = 600ma gs = 2.5v, i d = 500ma gs = 1.8 v, i d = 350 ma forward transfer admittance |y fs | ds = 10 v, i d = 400ma diode forward voltage (note 7 ) v sd 0.7 1.2 v v gs = 0v, i s = 150ma dynamic characteristics (note 8 ) input capacitance c iss ds = 16 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g gs = 4.5 v, v ds = 10 v, id = 250m a gate - source charge q gs gd d(on) dd = 10 v, v gs = 4.5 v, r l = 47 , r g = 10 d = 200ma turn - on rise time t r d(off) f notes: 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing. 0 1 2 3 4 5 fig. 1 typical output characteristics v , drain-source voltage (v) ds 0 0.5 1.0 1.5 2.0 i , d r a i n c u r r e n t ( a ) d v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 4.5v gs v = 1.2v gs v = 1.8v gs 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristics v , gate source voltage (v) gs 0 0.5 1.0 1.5 i , d r a i n c u r r e n t ( a ) d v = 5v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a
dmn2400ufb4 document number: ds32025 rev. 6 - 2 4 of 7 www.diodes.com may 2015 ? diodes incorporated dmn2400ufb4 0 0.4 0.8 1.2 1.6 2 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d 0 0.2 0.4 0.6 0.8 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 1.8v gs v = 4.5v gs v = 2.5v gs 0 0.25 0.50 0.75 1.00 1.25 1.50 i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d 0 0.2 0.4 0.6 0.8 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0.6 0.8 1.0 1.2 1.4 1.6 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) v = 2.5.v i = 500ma gs d v = 4.5v i = 1.0a gs d fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0 0.2 0.4 0.6 0.8 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 4.5v i = 1.0a gs d v = 2.5v i = 500ma gs d fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.2 0.4 0.6 0.8 1.0 1.2 v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = 250a d i = 1ma d 0 0.4 0.8 1.2 1.6 2.0 0 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current 0.2 i , s o u r c e c u r r e n t ( a ) s t = 25c a
dmn2400ufb4 document number: ds32025 rev. 6 - 2 5 of 7 www.diodes.com may 2015 ? diodes incorporated dmn2400ufb4 0 10 20 30 40 50 60 0 5 10 15 20 fig. 9 typical capacitance v , drain-source voltage (v) ds c , c a p a c i t a n c e ( p f ) f = 1mhz c iss c oss c rss 1 10 100 1,000 2 4 6 8 10 12 14 16 18 20 fig. 10 typical drain-source leakage current vs. drain-source voltage v , drain-source voltage (v) ds i , d r a i n - s o u r c e l e a k a g e c u r r e n t ( n a ) d s s t = 25c a t = 85c a t = 125c a t = 150c a t = -55c a 2 4 6 8 10 12 fig. 11 typical gate-source leakage current vs. gate-source voltage v , gate-source voltage (v) gs 1 10 100 1,000 10,000 100,000 i , g a t e - s o u r c e l e a k a g e c u r r e n t ( n a ) g s s t = 150c a t = 25c a t = 85c a t = 125c a t = -55c a 1 10 100 1,000 10,000 100,000 2 4 6 8 10 12 fig. 12 typical gate-source leakage current vs. gate-source voltage v , gate-source voltage (v) gs i , g a t e - s o u r c e l e a k a g e c u r r e n t ( n a ) g s s t = 150c a t = 25c a t = 85c a t = 125c a t = -55c a 0.001 0.01 0.1 1 10 100 1,000 fig. 13 transient thermal response t , pulse duration time (s) 1 0.00001 0.0001 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t - t = p * r (t) duty cycle, d = t /t j a ja 12 ? r (t) = r(t) * ? ja r r = 253c/w ? ? ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
dmn2400ufb4 document number: ds32025 rev. 6 - 2 6 of 7 www.diodes.com may 2015 ? diodes incorporated dmn2400ufb4 package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. x2 - dfn1006 - 3 dim min max typ a ? ? a1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.05 1.00 e 0.55 0.65 0.60 e ? ? ? ? l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 ? ? ? ? all dimensions in mm dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 y c g1 g2 x x 1 z l2 a1 e b2 l1 l3 d e b1 a
dmn2400ufb4 document number: ds32025 rev. 6 - 2 7 of 7 www.diodes.com may 2015 ? diodes incorporated dmn2400ufb4 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application , customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or fore ign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems witho ut the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices o r systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruction s for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect it s safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5, diodes incorporated www.diodes.com
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