? semiconductor components industries, llc, 2014 november, 2014 ? rev. 1 1 publication order number: tvs8501v5/d tvs8501v5 transient voltage suppressors features ? protection for the following iec standards: iec61000?4?2 level 4: 30 kv contact discharge iec61000?4?5 (lightning) 70 a (8/20 s) ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit iec 61000?4?2 (esd) contact air 30 30 kv operating junction and storage temperature range t j , t stg ?65 to +150 c maximum peak pulse current 8/20 s @ t a = 25 c i pp 70 a stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. device package shipping ? ordering information http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. TVS8501V5MUT5G udfn2 (pb?free) 8000 / tape & reel marking diagram 1 cathode 2 anode udfn2 case 517cz a m a = specific device code m = date code
tvs8501v5 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current *see application note and8308/d for detailed explanations of datasheet parameters. uni?directional tvs i pp i f v i i r i t v rwm v c v br v f electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol conditions min typ max unit reverse working voltage v rwm 5.0 v breakdown voltage (note 1) v br i t = 1 ma 6.0 7.0 9.0 v reverse leakage current i r v rwm = 5 v 0.1 a clamping voltage (note 2) v c i pp = 1 a, t p = 8 x 20 s 7.5 v clamping voltage (note 2) v c i pp = 35 a, t p = 8 x 20 s 9.5 v clamping voltage (note 2) v c i pp = 70 a, t p = 8 x 20 s 11.5 v junction capacitance c j v r = 0 v, f = 1 mhz 16 pf dynamic resistance r dyn tlp pulse 0.04 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 1. breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 2. non?repetitive current pulse at t a = 25 c, per iec61000?4?5 waveform.
tvs8501v5 http://onsemi.com 3 figure 1. positive tlp i?v curve figure 2. clamping voltage vs. peak pulse current (t p = 8/20 s) v pk (v) i pk (a) 9 8 7 6 5 4 3 2 1 0 0 5 10 15 20 30 25 v pk (v) i pk (a) 080 70 10 20 30 40 60 50 14 12 10 8 6 4 2 0 figure 3. cv characteristics c (pf) v bias (v) 50 40 35 30 25 20 15 10 5 0 012 34 6 5 45
tvs8501v5 http://onsemi.com 4 transmission line pulse (tlp) measurement transmission line pulse (tlp) provides current versus voltage (i?v) curves in which each data point is obtained from a 100 ns long rectangular pulse from a charged transmission line. a simplified schematic of a typical tlp system is shown in figure 4. tlp i?v curves of esd protection devices accurately demonstrate the product?s esd capability because the 10s of amps current levels and under 100 ns time scale match those of an esd event. this is illustrated in figure 5 where an 8 kv iec 61000?4?2 current waveform is compared with tlp current pulses at 8 a and 16 a. a tlp i?v curve shows the voltage at which the device turns on as well as how well the device clamps voltage over a range of current levels. for more information on tlp measurements and how to interpret them please refer to and9007/d. figure 4. simplified schematic of a typical tlp system dut l s oscilloscope attenuator 10 m v c v m i m 50 coax cable 50 coax cable figure 5. comparison between 8 kv iec 61000?4?2 and 8 a and 16 a tlp waveforms
tvs8501v5 http://onsemi.com 5 iec 61000?4?2 spec. level test volt- age (kv) first peak current (a) current at 30 ns (a) current at 60 ns (a) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 i peak 90% 10% iec61000?4?2 w aveform 100% i @ 30 ns i @ 60 ns t p = 0.7 ns to 1 ns figure 6. iec61000?4?2 spec 50 50 cable tvs oscilloscope esd gun figure 7. diagram of esd test setup esd voltage clamping for sensitive circuit elements it is important to limit the voltage that an ic will be exposed to during an esd event to as low a voltage as possible. the esd clamping voltage is the voltage drop across the esd protection diode during an esd event per the iec61000?4?2 waveform. since the iec61000?4?2 was written as a pass/fail spec for larger systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. on semiconductor has developed a way to examine the entire voltage waveform across the esd protection diode over the time domain of an esd pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all esd protection diodes. for more information on how on semiconductor creates these screenshots and how to interpret them please refer to and8307/d. figure 8. 8 x 20 s pulse waveform 100 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) % of peak pulse current t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s peak value i rsm @ 8 s half value i rsm /2 @ 20 s
tvs8501v5 http://onsemi.com 6 package dimensions udfn2 1.6x1.0, 1.1p case 517cz issue a 1 2x 0.58 dimensions: millimeters 1.00 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 2x recommended 1.70 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. a b e d bottom view b 2x 2x 0.08 c pin one reference top view 2x 0.08 c a a1 0.05 c 0.05 c c seating plane side view l 1 dim min max millimeters a 0.45 0.55 a1 ??? 0.05 b 0.85 0.95 d 1.60 bsc e 1.00 bsc e 1.10 bsc l 0.35 0.45 e/2 e a m 0.07 b c a m 0.07 b c on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 tvs8501v5/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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