SSFM2506L 25v n-channel mosfet www.goodark.com page 1 of 7 rev.1.0 main product characteristics: v dss 25v r ds (on) 6mohm i d 60a features and benefits: ? advanced trench mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 175 operating temperature ? lead free product description: it utilizes the latest frrmos (fast reverse recovery mos) trench processing techniques to achieve extremely low on resistance, fast switching speed and short reverse recovery time. these features combine to make this design an extremely efficient and reliable device for use in pwm, load switching and a wide variety of other applications absolute max rating: symbol parameter max. units id @ tc = 25c continuous drain current, vgs @ 10v 60 id @ tc = 100c continuous drain current, vgs @ 10v 50 idm pulsed drain current 130 ism pulsed source current (body diode) 130 a pd @tc = 25c power dissipation 50 w pd @tc =100c power dissipation 25 w v ds drain-source voltage 25 v vgs gate-to-source voltage 20 v eas single pulse avalanche energy @ l=0.1mh 90 mj iar avalanche current @ l=0.1mh 42 a tj tstg operating junction and storage temperature range -55 to + 175 c thermal resistance symbol characterizes value unit r jc junction-to-case 2.8 /w junction-to-ambient ( t 10s) 15 /w r ja junction-to-ambient (pcb mounted, steady-state) 41 /w t o-252 d pak m arking and pin assignm ent ss f m 250 8 t o-252 d pak m arking and pin assignm ent ss f m 250 8 ss f m 2506 t o-252 d pak m arking and pin assignm ent ss f m 250 8 t o-252 d pak m arking and pin assignm ent ss f m 250 8 ss f m 2506 SSFM2506L t o-252 d pak m arking and pin assignm ent ss f m 250 8 t o-252 d pak m arking and pin assignm ent ss f m 250 8 ss f m 2506 t o-252 d pak m arking and pin assignm ent ss f m 250 8 t o-252 d pak m arking and pin assignm ent ss f m 250 8 ss f m 2506 SSFM2506L
SSFM2506L 25v n-channel mosfet www.goodark.com page 2 of 7 rev.1.0 electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max units conditions bvdss drain-to-source breakdown voltage 25 v vgs = 0v, id = 250a rds(on) static drain-to-source on-resistance 4.4 6 m vgs = 10v, id = 30a vgs(th) gate threshold voltage 1.2 2.1 2.5 v vds = vgs, id = 250a 10 vds = 25v, vgs = 0v idss drain-to-source leakage current 50 a vds = 25v, vgs = 0v, tj = 55c gate-to-source forward leakage 100 vgs =20v igss gate-to-source reverse leakage -100 na vgs = -20v qg total gate charge 34.59 40 qgs gate-to-source charge 5.99 8 qgd gate-to-drain("miller") charge 11.33 15 nc id = 30a, vds=12.5v, vgs = 10v td(on) turn-on delay time 11.18 tr rise time 65.40 td(off) turn-off delay time 25.20 tf fall time 7.56 ns vgs=10v, vds=12.5v, rl=0.42, rgen=3 ciss input capacitance 1903.50 coss output capacitance 500.30 crss reverse transfer capacitance 304.50 pf vgs = 0v, vds = 12.5v, ? = 1.0mhz r g gate resistance 1.4 v gs =0v, v ds =0v, f=1mhz source-drain ratings and characteristics symbol parameter min. typ. max units conditions is maximum body-diode continuous curren 60 a vsd diode forward voltage 0.5 1 v is=1a, vgs=0v trr reverse recovery time 13.51 ns qrr reverse recovery charge 4.8 nc tj = 25c, if =30a, di/dt = 150a/s ton forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld)
SSFM2506L 25v n-channel mosfet www.goodark.com page 3 of 7 rev.1.0 typical electrical and thermal characteristics figure 1: typical output characteristics figure 2: typical transfer characteristics figure 3: on-resistance vs. drain current and figure 4: on-resistance vs. junction gate voltage temperature figure 5: on-resistance vs. gate-source voltage figure 6: body-diode characteristics 0 20 40 60 80 100 0 1 2 3 4 5 vds,drain to source voltage(v) id,drain current(a) 10v 7v 6v 3.5v 4v 4.5v 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 vgs,gate to source voltage(v) id,drain current(a) 125 25 vds=5v 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 id,drain current(a) rdson,drain-to-source on resistance vgs=4.5v vgs=10v 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 0 25 50 75 100 125 150 175 200 tj,junction temperature(c) rdson,drain-to-source on resistance(normalized) vgs=10v id=30a vgs=4.5v id=20a 0 5 10 15 20 25 30 2 3 4 5 6 7 8 9 10 vgs,gate to source voltage(v) rdson,drain-to-source on resistance(normalized) 125 25 id=30a 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 vsd,source to drain voltage(v) is,source to drain current(a) 125 25
SSFM2506L 25v n-channel mosfet www.goodark.com page 4 of 7 rev.1.0 typical electrical and thermal characteristics figure 7: gate-charge characteristics figure 8: capacitance characteristics figure 9: maximum forward biased safe figure 10: single pulse power rating operating area( ) junction-to-case ( ) figure 11: power de-rating ( ) figure 12: current de-rating ( ) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 tcase (c) power dissipation (w) 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 qg,gate charge(nc) vgs,gate to source voltage(v) vds=12.5v id=30a 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 vds, drain to source voltage(v) capacitance (pf) ciss coss crss vgs=0,f=1mhz ciss=cgd+cgs, cds shorted coss=cds+cgd crss=cgd 0.1 1 10 100 1000 0.01 0.1 1 10 100 vds,drain to source voltage(v) id,drain current(a) 10us 100us 1ms 10ms dc ron limited tj(max)=175 tc=25 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) power ( w) tj(max)=175 ta=25 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 tcase (c) id,drain current(a)
SSFM2506L 25v n-channel mosfet www.goodark.com page 5 of 7 rev.1.0 typical electrical and thermal characteristics figure 13: normalized maximum transient thermal impedance ( ) figure 14: normalized maximum transient thermal impedance ( ) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) zjc,transient thermal resistance( normalized ) duty cycle d= 0.5,0.3,0.1,0.05,0.01,single tj max pdm*z jc*r jc+tc r jc=2.5 /w t t p d=t p /t 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) zja,transient thermal resistance( normalized ) duty cycle d=0.5,0.3,0.1, 0.05,0.01,single tj max pdm*z ja*r ja+ta r ja=36 /w t t p d=t p /t
SSFM2506L 25v n-channel mosfet www.goodark.com page 6 of 7 rev.1.0 notes: the maximum current rating is limited by bond -wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of tj(max)=175c. the maximum current rating is limited by bond-wires.
SSFM2506L 25v n-channel mosfet www.goodark.com page 7 of 7 rev.1.0 mechanical data
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