VS-MURD620CTHM3 www.vishay.com vishay semiconductors revision: 10-jul-15 1 document number: 94742 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultrafast rectifier, 2 x 3 a fred pt ? features ? ultrafast recovery time ? low forward voltage drop ? low leakage current ? 175 c operating junction temperature ? aec-q101 qualified ? meets jesd 201 class 2 whisker test ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 ? description / applications VS-MURD620CTHM3 is the state of the art ultrafast recovery rectifier specificall y designed with optimized performance of forward voltage drop and ultrafast recovery time. ? the planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. ? these devices are intended for use in the output rectification stage of smps, ups, dc/d c converters as well as freewheeling diode in low voltage inverters and chopper motor drives. ? their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package to-252aa (d-pak) i f(av) 2 x 3 a v r 200 v v f at i f 0.96 v t rr typ. see recovery table t j max. 175 c diode variation common cathode base common cathode common cathode 2 4 13 anode anode to-252aa (d-pak) absolute maximum ratings parameter symbol test conditions max. units peak repetitive reverse voltage v rrm 200 v average rectified forward current per device i f(av) total device, rated v r , t c = 146 c 6 a non-repetitive peak surge current i fsm 50 peak repetitive forw ard current per diode i fm rated v r , square wave, 20 khz, t c = 146 c 6 operating junction and storage temperatures t j , t stg -65 to +175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, ? blocking voltage v br , v r i r = 100 a 200 - - v forward voltage v f i f = 3 a - - 1.0 i f = 3 a, t j = 125 c - - 0.96 i f = 6 a - - 1.2 i f = 6 a, t j = 125 c - - 1.13 reverse leakage current i r v r = v r rated - - 5 a t j = 125 c, v r = v r rated - - 250 junction capacitance c t v r = 200 v - 12 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
VS-MURD620CTHM3 www.vishay.com vishay semiconductors revision: 10-jul-15 2 document number: 94742 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 50 a/s, v r = 30 v - 20 35 ns t j = 25 c i f = 3 a ? di f /dt = 200 a/s ? v r = 160 v -19- t j = 125 c - 26 - peak recovery current i rrm t j = 25 c - 3.1 - a t j = 125 c - 4.6 - reverse recovery charge q rr t j = 25 c - 30 - nc t j = 125 c - 60 - thermal - mechanical specifications parameter symbol test conditio ns min. typ. max. units maximum junction and storage temperature range t j , t stg -65 - 175 c thermal resistance, ? junction to case per leg r thjc --9.0 c/w thermal resistance, ? junction to ambient per leg r thja --80 thermal resistance, ? case to heatsink r thcs mounting surface, flat, smooth and greased --- weight -0.3- g -0.01- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-252aa (d-pak) murd620cth
VS-MURD620CTHM3 www.vishay.com vishay semiconductors revision: 10-jul-15 3 document number: 94742 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 t j = 175 c t j = 150 c t j = 25 c 0 0.4 0.8 v f - forward voltage drop (v) i f - instantaneous forward current (a) 100 1.2 0.1 0.2 0.6 1.0 1.4 1.6 0.01 0.1 1 10 100 0 100 150 v r - reverse voltage (v) i r - reverse current (a) t j = 175 c t j = 150 c t j = 125 c t j = 100 c t j = 25 c 200 50 0.001 100 1 10 100 1000 10 v r - reverse voltage (v) c t - junction capacitance (pf) t j = 25 c 0.01 0.1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 1 single pulse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
VS-MURD620CTHM3 www.vishay.com vishay semiconductors revision: 10-jul-15 4 document number: 94742 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 01 allowable case temperature (c) i f(av) - average forward current (a) 160 170 180 see note (1) 150 dc 140 130 23 square wave (d = 0.50) rated v r applied 4 5 120 02 average power loss (w) i f(av) - average forward current (a) 0 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc 13 1.0 2.0 4.5 3.0 4.0 rms limit 4 5 3.5 2.5 1.5 0.5 100 1000 t rr (ns) di f /dt (a/s) 20 40 v r = 30 v t j = 125 c t j = 25 c 30 50 10 i f = 3 a i f = 6 a 100 1000 q rr (nc) di f /dt (a/s) 40 i f = 6 a i f = 3 a 140 100 v r = 30 v t j = 125 c t j = 25 c 80 120 0 20 60
VS-MURD620CTHM3 www.vishay.com vishay semiconductors revision: 10-jul-15 5 document number: 94742 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-MURD620CTHM3 www.vishay.com vishay semiconductors revision: 10-jul-15 6 document number: 94742 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-MURD620CTHM3 75 3000 antistatic plastic tube vs-murd620cttrhm3 2000 2000 13" diameter reel vs-murd620cttrlhm3 3000 3000 13" diameter reel vs-murd620cttrrhm3 3000 3000 13" diameter reel links to related documents dimensions www.vishay.com/doc?95519 part marking information www.vishay.com/doc?95518 packaging information www.vishay.com/doc?95033 2 - ultrafast mur series 1 - vishay semiconductors product 3 - d = d-pak 4 - current rating (6 = 6 a) 5 - voltage rating (20 = 200 v) 6 - ct = center tap (dual) 7 - tape and reel suffix tr = tape and reel trl = tape and reel (left oriented) trr = tape and reel (right oriented) device code 5 1 3 2 4 6 7 8 mur vs- d 6 20 ct trl h m3 9 - environmental digit: m3 = halogen-free, rohs-compliant, and terminations lead (pb)-free 9 8 - h = aec-q101 qualified
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