q?v~zy??q?v?_rc]u??qcabfq hcd65r600t_HCU65R600T super junction mosfet ? very low fom (r ds(on) xq g ) ? extremely low switching loss ? excellent stability and uniformity ? 100% avalanche tested d-pak (hcd65r600t) i-pak (HCU65R600T) d g s d g s parameter value unit bv dss @t j,max 700 v i d 7.5 a r ds(on), max 0.6
qg ,typ 14 nc key parameters package & internal circuit hcd65r600t / HCU65R600T 650v n-channel super junction mosfet features application ? switch mode power supply (smps) ? uninterruptible power supply (ups) ? power factor correction (pfc) ? tv power & led lighting power * when mounted on the minimum pad size recommended (pcb mount) thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 2.2 e /w r ja junction-to-ambient * -- 50 r ja junction-to-ambient -- 110 symbol parameter value units v dss drain-source voltage 650 v v gs gate-source voltage 30 v i d drain current ? continuous (t c = 25 e ) 7.5 a drain current ? continuous (t c = 100 e ) 4.7 a i dm drain current ? pulsed (note 1) 22 a e as single pulsed avalanche energy (note 2) 160 mj p d power dissipation (t a = 25 e ) * 2.5 w power dissipation (t c = 25 e ) 57 w t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e absolute maximum ratings t c =25 e unless otherwise specified dec 2015
q?v~zy??q?v?_rc]u??qcabfq hcd65r600t_HCU65R600T super junction mosfet electrical characteristics t j =25 q c unless otherwise specified symbol parameter test conditions min typ max units i s continuous source-drain diode forward current -- -- 7.5 a i sm pulsed source-drain diode forward current -- -- 22 v sd source-drain diode forward voltage i s = 7.5 a, v gs = 0 v -- -- 1.4 v trr reverse recovery time i s = 7.5 a, v gs = 0 v di f /dt = 100 a/ v -- 300 -- qrr reverse recovery charge -- 2.4 -- & bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 650 -- -- v i dss zero gate voltage drain current v ds = 650 v, v gs = 0 v -- -- 10 3 v ds = 520 v, t j = 125 e -- -- 100 3 i gss gate-body leakage current v gs = 30 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 50 v, v gs = 0 v, f = 1.0 mhz -- 590 770 ? c oss output capacitance -- 41 54 ? c rss reverse transfer capacitance -- 6.5 8.5 ? dynamic characteristics t d(on) turn-on time v ds = 325 v, i d = 7.5 a, r g = 25 ? -- 18 46 t r turn-on rise time -- 20 50 t d(off) turn-off delay time -- 60 130 t f turn-off fall time -- 22 54 q g total gate charge v ds = 520 v, i d = 7.5 a v gs = 10 v -- 14.0 18.5 nc q gs gate-source charge -- 3.2 -- nc q gd gate-drain charge -- 4.2 -- nc switching characteristics source-drain diode maximum ratings and characteristics notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. i as =3.0a, v dd =50v, r g =25 : , starting t j =25 q c 3. pulse test : pulse width ? v ' x w \ & |