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irfl9014, sihfl9014 www.vishay.com vishay siliconix s14-1686-rev. f, 18-aug-14 1 document number: 91195 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 power mosfet marking code: fe features ? surface mount ? available in tape and reel ? dynamic dv/dt rating ? repetitive avalanche rated ?p-channel ? fast switching ? ease of paralleling ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description third generation power mosfet s from vishay provide the designer with the best combi nation of fast switching, ruggedized device design , low on-resistance and cost-effectiveness. ? the sot-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. its unique package design allows for easy automatic pick-and-place as with other sot or soic packages but has the added advantage of improved therma l performance due to an enlarged tab for heat sinking. power dissipation of greater than 1.25 w is possibl e in a typical surface mount application. note a. see device orientation. notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. v dd = - 25 v, starting t j = 25 c, l = 50 mh, r g = 25 ? , i as = - 1.8 a (see fig. 12). c. i sd ? - 6.7 a, di/dt ? 90 a/s, v dd ? v ds , t j ? 150 c. d. 1.6 mm from case. e. when mounted on 1" square pcb (fr-4 or g-10 material). product summary v ds (v) -60 r ds(on) ( ? )v gs = -10 v 0.50 q g (max.) (nc) 12 q gs (nc) 3.8 q gd (nc) 5.1 configuration single s g d p-channel mosfet sot-223 g d s d available ordering information package sot-223 sot-223 lead (pb)-free and halogen- free sihfl9014-ge3 sihfl9014tr-ge3 lead (pb)-free irfl9014pbf irfl9014trpbf a sihfl9014-e3 sihfl9014t-e3 a absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -60 v gate-source voltage v gs 20 continuous drain current v gs at - 10 v t c = 25 c i d -1.8 a t c = 100 c -1.1 pulsed drain current a i dm -14 linear derating factor 0.025 w/c linear derating factor (pcb mount) e 0.017 single pulse avalanche energy b e as 140 mj repetitive avalanche current a i ar -1.8 a repetitive avalanche energy a e ar 0.31 mj maximum power dissipation t c = 25 c p d 3.1 w maximum power dissipation (pcb mount) e t a = 25 c 2.0 peak diode recovery dv/dt c dv/dt -4.5 v/ns operating junction and storage temperature range t j , t stg -55 to +150 c soldering recommendations (peak temperature) d for 10 s 300
irfl9014, sihfl9014 www.vishay.com vishay siliconix s14-1686-rev. f, 18-aug-14 2 document number: 91195 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note a. when mounted on 1" square pcb (fr-4 or g-10 material). notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. pulse width ? 300 s; duty cycle ? 2 %. thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient ? (pcb mount) a r thja -60 c/w maximum junction-to-case (drain) r thjc -40 specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a -60 - - v v ds temperature coefficient ? v ds /t j reference to 25 c, i d = 1 ma - -0.059 - v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a -2.0 - -4.0 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = -60 v, v gs = 0 v - - - 100 a v ds = -48 v, v gs = 0 v, t j = 125 c - - -500 drain-source on-sta te resistance r ds(on) v gs = -10 v i d = 1.1 a b - - 0.50 ? forward transconductance g fs v ds = - 25 v, i d = 1.1 a b 1.3 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 5 - 270 - pf output capacitance c oss - 170 - reverse transfer capacitance c rss -31- total gate charge q g v gs = - 10 v i d = - 6.7 a, v ds = - 48 v, see fig. 6 and 13 b --12 nc gate-source charge q gs --3.8 gate-drain charge q gd --5.1 turn-on delay time t d(on) v dd = - 30 v, i d = - 6.7 a, r g = 24 ? , r d = 4.0 ? , see fig. 10 b -11- ns rise time t r -63- turn-off delay time t d(off) -9.6- fall time t f -31- internal drain inductance l d between lead, ? 6 mm (0.25") from package and center of die contact -4.0- nh internal source inductance l s -6.0- drain-source body diode characteristics continuous source-drain diode current i s mosfet symbol ? showing the ? integral reverse ? p - n junction diode --- 1.8 a pulsed diode forward current a i sm --- 14 body diode voltage v sd t j = 25 c, i s = - 1.8 a, v gs = 0 v b --- 5.5v body diode reverse recovery time t rr t j = 25 c, i f = - 6.7 a, di/dt = 100 a/s b - 80 160 ns body diode reverse recovery charge q rr - 0.096 0.19 c forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s and l d ) d s g s d g irfl9014, sihfl9014 www.vishay.com vishay siliconix s14-1686-rev. f, 18-aug-14 3 document number: 91195 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) fig. 1 - typical output characteristics, t c = 25 c fig. 2 - typical output characteristics, t c = 150 c fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage 20 s pulse width t c = 25 c 4.5 v bottom to p v gs - 15 v -10 v -8.0 v -7.0 v -6.0 v -5.5 v -5.0 v -4.5 v 91195_01 - v ds , drain-to-source voltage (v) - i d , drain current (a) 10 1 10 0 10 -1 10 0 10 1 10 -1 91195_02 4.5 v bottom to p v gs - 15 v -10 v -8.0 v -7.0 v -6.0 v -5.5 v -5.0 v -4.5 v 10 1 10 0 10 0 10 1 10 -1 - v ds , drain-to-source voltage (v) - i d , drain current (a) 20 s pulse width t c = 150 c 91195_03 25 c 150 c 20 s pulse width v ds = - 25 v 10 1 10 0 - i d , drain current (a) - v gs , gate-to-source voltage (v) 5678910 4 10 -1 91195_04 i d = - 6.7 a v gs = 10 v 0.0 0.5 1.0 1.5 2.0 2.5 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 t j , junction temperature ( c) r ds(on) , drain-to-source on resistance (normalized) 91195_05 600 500 400 300 0 100 200 10 0 10 1 capacitance (pf) - v ds , drain-to-source voltage (v) c iss c rss c oss v gs = 0 v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 91195_06 i d = -6.7 a v ds = -48 v for test circuit see figure 13 v ds = -30 v q g , total gate charge (nc) - v gs , gate-to-source voltage (v) 20 16 12 8 0 4 0 416 12 8 irfl9014, sihfl9014 www.vishay.com vishay siliconix s14-1686-rev. f, 18-aug-14 4 document number: 91195 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area fig. 9 - maximum drain cu rrent vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case 91195_07 10 1 10 0 - v sd , source-to-drain voltage (v) - i sd , reverse drain current (a) 1.0 5.0 4.0 3.0 2.0 25 c 150 c v gs = 0 v 6.0 10 -1 91195_08 100 s 1 ms 10 ms operation in this area limited by r ds(on) t c = 25 c t j = 150 c single pulse - i d , drain current (a) 10 2 2 5 2 5 2 5 - v ds , drain-to-source voltage (v) 1 10 10 2 25 25 2 5 0.1 1 10 0.1 25 10 3 91195_09 - i d , drain current (a) t c , case temperature (c) 0.0 0.5 1.0 1.5 2.0 25 150 125 100 75 50 pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. - 10 v + - v ds v dd v gs 10 % 90 % v ds t d(on) t r t d(off) t f 91195_11 0 ? 0.5 0.2 0.1 0.05 0.01 single pulse (thermal response) p dm t 1 t 2 notes: 1. duty factor, d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 0.02 thermal response (z ? jc ) 1 0.1 10 -2 t 1 , rectangular pulse duration (s) 10 -5 10 -4 10 -3 10 -2 0.1 1 10 10 2 10 10 2 10 3 irfl9014, sihfl9014 www.vishay.com vishay siliconix s14-1686-rev. f, 18-aug-14 5 document number: 91195 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit r g i as 0.01 t p d.u.t l v ds + - v dd - 10 v var y t p to obtain required i as i as v ds v dd v ds t p 91195_12c bottom to p i d - 0.80 a - 1.1 a - 1.8 a v dd = - 25 v 400 0 100 200 300 25 150 125 100 75 50 starting t j , junction temperature (c) e as , single pulse energy (mj) q gs q gd q g v g charge - 10 v d.u.t. - 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v current regulator current sampling resistors same type as d.u.t. + - irfl9014, sihfl9014 www.vishay.com vishay siliconix s14-1686-rev. f, 18-aug-14 6 document number: 91195 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 14 - for p-channel ? ? ? ? ? ? ? ? ? vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91195 . p.w. period di/dt diode recovery dv/dt body diode forward drop body diode forward current driver gate drive inductor current d = p.w. period + - - - - + + + peak dio d e recovery d v/ d t test circuit ? dv/dt controlled by r g ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low stray inductance ? g round plane ? low leakage inductance current tran s former r g ? compliment n-channel of d.u.t. for driver v dd ? i s d controlled by duty factor d note note a. v gs = - 5 v for logic level and - 3 v drive device s v gs = - 10 v a d.u.t. l s d waveform d.u.t. v d s waveform v dd re-applied voltage ripple 5 % i s d rever s e recovery current document number: 91363 www.vishay.com revision: 15-sep-08 1 package information vishay siliconix sot-223 (high voltage) notes 1. dimensioning and toler ancing per asme y14.5m-1994. 2. dimensions are shown in millimeters (inches). 3. dimension do not include mold flash. 4. outline conforms to jedec outline to-261aa. d b 3 b1 0.10 (0.004) m c m h 0.10 (0.004) m c b m 0.20 (0.00 8 ) m c a m 0.10 (0.004) m c b m 3 x b e1 e 1 2 3 a e 4 c a 0.0 8 (0.003) 4 x l l1 4 x c 3 millimeters inches dim. min. max. min. max. a 1.55 1.80 0.061 0.071 b 0.65 0.85 0.026 0.033 b1 2.95 3.15 0.116 0.124 c 0.25 0.35 0.010 0.014 d 6.30 6.70 0.248 0.264 e 3.30 3.70 0.130 0.146 e 2.30 bsc 0.0905 bsc e1 4.60 bsc 0.181 bsc h 6.71 7.29 0.264 0.287 l 0.91 - 0.036 - l1 0.061 bsc 0.0024 bsc - 10' - 10' ecn: s-82109-rev. a, 15-sep-08 dwg: 5969 legal disclaimer notice www.vishay.com vishay revision: 08-feb-17 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners. ? 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