APTGLQ80HR120CT3G APTGLQ80HR120CT3G C rev 0 november, 2012 www.microsemi.com 1-9 all ratings @ t j = 25c unless otherwise specified these devices are sensitiv e to electrostatic discharge. proper handing procedures should be followe d. see application note apt0502 on www.microsemi.com all multiple inputs and outputs must be shorted together 10/11 ; 23/24 ; 2/3 ; high speed trench & field stop igbt4 (q1, q2): v ces = 1200v ; i c = 80a @ tc = 80c trench & field stop igbt3 (q3, q4): application ? uninterruptible power supplies features ? q1, q2 high speed trench + field stop igbt4 - low voltage drop - low tail current ? q3, q4 trench + field stop igbt3 - low voltage drop - low tail current - switching frequency up to 20 khz ? sic schottky diode (d3, d4) - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? stable temperature behavior ? very rugged ? solderable terminals for easy pcb mounting ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? low profile ? rohs compliant phase leg & dual common emitter power module downloaded from: http:///
APTGLQ80HR120CT3G APTGLQ80HR120CT3G C rev 0 november, 2012 www.microsemi.com 2-9 1. high speed trench & field stop igbt4 phase leg q1&q2 (per igbt) absolute maximum ratings electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 150 a v ce(sat) collector emitter saturation voltage v ge =15v i c = 80a t j = 25c 1.7 2.05 2.4 v t j = 150c 2.6 v ge ( th ) gate threshold voltage v ge = v ce , i c = 2 ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 240 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 4600 pf c oes output capacitance 300 c res reverse transfer capacitance 270 q g gate charge v ge = 15v, i c = 80a v ce = 960v 370 nc t d(on) turn-on delay time inductive switching (25c) v ge = 15v v bus = 600v i c = 80a r g = 6 30 ns t r rise time 57 t d(off) turn-off delay time 290 t f fall time 16 t d(on) turn-on delay time inductive switching (150c) v ge = 15v v bus = 600v i c = 80a r g = 6 30 ns t r rise time 49 t d(off) turn-off delay time 366 t f fall time 48 e on turn on energy v ge = 15v v bus = 600v i c = 80a r g = 6 t j = 25c 6.4 mj t j = 150c 7.5 e off turn off energy t j = 25c 2.4 t j = 150c 4.5 i sc short circuit data v ge 15v ; v bus = 600v t p 10s ; t j = 150c 300 a r thjc junction to case thermal resistance 0.3 c/w symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v i c continuous collector current t c = 25c 150 a t c = 80c 80 i cm pulsed collector current t c = 25c 320 v ge gate C emitter voltage 20 v p d maximum power dissipation 500 w rbsoa reverse bias safe operating area t j = 150c 160a @ 1100v downloaded from: http:///
APTGLQ80HR120CT3G APTGLQ80HR120CT3G C rev 0 november, 2012 www.microsemi.com 3-9 diode ratings and characteristics (d1 & d2) (per diode) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v i rm maximum reverse leakage current v r =1200v 100 a i f dc forward current tc =80c 30 a v f diode forward voltage i f = 30a 2.6 3.1 v i f = 60a 3.2 i f = 30a t j = 125c 1.8 t rr reverse recovery time i f = 30a v r = 800v di/dt =200a/s t j = 25c 300 ns t j = 125c 380 q rr reverse recovery charge t j = 25c 360 nc t j = 125c 1700 r thjc junction to case thermal resistance 1.2 c/w 2. trench & field stop igbt3 dual common emitter q3&q4 (per igbt) absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v i c continuous collector current t c = 25c 100 a t c = 80c 75 i cm pulsed collector current t c = 25c 140 v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 250 w rbsoa reverse bias safe operating area t j = 150c 150a @ 550v electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a v ce(sat) collector emitter saturation voltage v ge =15v i c = 75a t j = 25c 1.5 1.9 v t j = 150c 1.7 v ge ( th ) gate threshold voltage v ge = v ce , i c = 600a 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 600 na downloaded from: http:///
APTGLQ80HR120CT3G APTGLQ80HR120CT3G C rev 0 november, 2012 www.microsemi.com 4-9 dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 4620 pf c oes output capacitance 300 c res reverse transfer capacitance 140 q g gate charge v ge =15v, i c =75a v ce =300v 0.8 c t d(on) turn-on delay time inductive switching (25c) v ge = 15v v bus = 300v i c = 75a r g = 4.7 110 ns t r rise time 45 t d(off) turn-off delay time 200 t f fall time 40 t d(on) turn-on delay time inductive switching (150c) v ge = 15v v bus = 300v i c = 75a r g = 4.7 120 ns t r rise time 50 t d(off) turn-off delay time 250 t f fall time 60 e on turn-on switching energy v ge = 15v v bus = 300v i c = 75a r g = 4.7 t j = 25c 0.21 mj t j = 150c 0.36 e off turn-off switching energy t j = 25c 2.2 mj t j = 150c 2.6 i sc short circuit data v ge 15v ; v bus = 360v t p 6s ; t j = 150c 380 a r thjc junction to case thermal resistance 0.60 c/w sic diode ratings a nd characteristics (d3 & d4) (per diode) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v i rm maximum reverse leakage current v r =600v t j = 25c 30 180 a t j = 175c 60 900 i f dc forward current tc = 100c 30 a v f diode forward voltage i f = 30a t j = 25c 1.6 1.8 v t j = 175c 2 2.4 q c total capacitive charge i f = 30a, v r = 600v di/dt =1000a/s 84 nc c total capacitance f = 1mhz, v r = 200v 195 pf f = 1mhz, v r = 400v 150 r thjc junction to case thermal resistance 1 c/w downloaded from: http:///
APTGLQ80HR120CT3G APTGLQ80HR120CT3G C rev 0 november, 2012 www.microsemi.com 5-9 3. thermal & package characteristics temperature sensor ntc (see application note apt0406 on www.microsemi.com). symbol characteristic min typ max unit r 25 resistance @ 25c 22 k ? r 25 /r 25 5 % b 25/100 t 25 = 298.15 k 3980 k ? b/b 3 % ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 c t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g sp3f package outline (dimensions in mm) see application note 1906 - mounting instructions for sp3f power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTGLQ80HR120CT3G APTGLQ80HR120CT3G C rev 0 november, 2012 www.microsemi.com 6-9 4. typical performance curve q1, q2 high speed trench + field stop igbt4 + cr1 & cr2 diode characteristics output characteristics (v ge =15v) t j =25c t j =150c 0 20 40 60 80 100 120 140 160 0.511.522.533.54 v ce (v) i c (a) output characteristics v ge =9v v ge =13v v ge =15v v ge =20v 0 20 40 60 80 100 120 140 160 0123456 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =150c 0 20 40 60 80 100 120 140 160 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff 0 6 12 18 24 30 0 20406080100120140160 i c (a) e (mj) v ce = 600v v ge = 15v r g = 6 ? t j = 150c eon eoff 3 5 7 9 11 5 7.5 10 12.5 15 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 80a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 40 80 120 160 200 0 300 600 900 1200 v ce (v) i c (a) v ge =15v t j =150c r g =6 ? maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt downloaded from: http:///
APTGLQ80HR120CT3G APTGLQ80HR120CT3G C rev 0 november, 2012 www.microsemi.com 7-9 hard switching zcs zvs 0 30 60 90 120 150 0 2 04 06 08 01 0 0 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =6 ? t j =150c t c =75c operating frequency vs collector current forward characteristic of diode t j =25c t j =125c 0 20 40 60 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v f (v) i f (a) maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode q3, q4 trench + field stop igbt3 t j =25c t j =25c t j =150c 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 i c (a) v ce (v) output characteristics (v ge =15v) v ge =15v v ge =13v v ge =19v v ge =9v 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 3.5 i c (a) v ce (v) output characteristics t j = 150 c t j =25c t j =25c t j =150c 0 25 50 75 100 125 150 5 6 7 8 9 101112 i c (a) v ge (v) transfert characteristics eon eoff 0 1 2 3 4 5 0 25 50 75 100 125 150 e (mj) i c (a) energy losses vs collector current v ce = 300v v ge = 15v r g = 4.7 ? t j = 150 c downloaded from: http:///
APTGLQ80HR120CT3G APTGLQ80HR120CT3G C rev 0 november, 2012 www.microsemi.com 8-9 eon eoff 0 1 2 3 4 5 0 5 10 15 20 25 30 35 e (mj) gate resistance (ohms) v ce = 300v v ge =15v i c = 75a t j = 150 c switching energy losses vs gate resistance 0 25 50 75 100 125 150 175 0 100 200 300 400 500 600 700 i c (a) v ce (v) reverse bias safe operating area v ge =15v t j =1 50 c r g =4.7 ? 0.9 0.7 0.5 0.3 0.1 0.05 sin g le pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration in seconds maximum effective transient thermal impedance, junction to case vs pulse du ration cr3 & cr4 sic diode characteristics d = 0.9 0.7 0.5 0.3 0.1 0.05 sin g le pulse 0 0.2 0.4 0.6 0.8 1 1.2 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse dura tion t j =25c t j =75c t j =125c t j =175c 0 10 20 30 40 50 60 00.511.522.533.5 i f forward current (a) v f forward voltage (v) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 100 200 300 400 500 600 200 300 400 500 600 700 800 i r reverse current (a) v r reverse voltage (v) reverse characteristics 0 200 400 600 800 1000 1200 1 10 100 1000 c, capacitance (pf) v r reverse voltage capacitance vs.reverse voltage downloaded from: http:///
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