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this is information on a product in full production. october 2016 docid024506 rev 6 1/17 STGD19N40LZ automotive-grade 390 v internally clamped igbt e scis 180 mj datasheet - production data figure 1. internal schematic diagram features ? aec-q101 qualified ? 180 mj of avalanche energy @ t c = 150 c, l = 3 mh ? esd gate-emitter protection ? gate-collector high voltage clamping ? logic level gate drive ? low saturation voltage ? high pulsed current capability ? gate and gate-emitter resistor applications ? pencil coil electronic ignition driver description this application-specific igbt utilizes the most advanced powermesh? technology. the built-in zener diodes between gate-collector and gate- emitter provide overvoltage protection capabilities. the device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems. dpak 1 3 tab c (2 or tab) e (3) g (1) r g r ge sc30180 table 1. device summary order code marking packages packing STGD19N40LZ gd19n40lz dpak tape and reel www.st.com
contents STGD19N40LZ 2/17 docid024506 rev 6 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 dpak (to-252) type a2 package information . . . . . . . . . . . . . . . . . . . . . .11 4.2 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
docid024506 rev 6 3/17 STGD19N40LZ electrical ratings 17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) v ces(clamped) v v ecs emitter collector voltage (v ge = 0) 20 v i c (1) 1. calculated according to the iterative formula collector current (continuous) at t c = 100 c 25 a i cp (2) 2. pulse width limited by max. junction temperature allowed pulsed collector current 40 a v ge gate-emitter voltage v ge(clamped) v p tot total dissipation at t c = 25 c 125 w e scis (3) 3. for e scis test circuit refer to figure 16 . (inductive load switching), with a and b not connected. single pulse energy t c = 25 c, l = 3 mh, v cc = 50 v 300 mj single pulse energy t c =150 c, l = 3 mh, v cc = 50 v 180 mj i scis avalanche current t c = 25 c, l = 3 mh, v cc = 50 v 13.1 a avalanche current t c = 150 c, l = 3 mh, v cc = 50 v 10.2 a esd human body model, r = 1.5 k , c = 100 pf 8 kv machine model, r = 0, c = 100 pf 800 v charged device model 2 kv t stg storage temperature ? 55 to 175 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case 1.2 c/w r thj-amb thermal resistance junction-ambient device in free air 100 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t jmax () i c t c () , () ------------------------------------------------------------------------------------------------------- =
electrical characteristics STGD19N40LZ 4/17 docid024506 rev 6 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static electrical characteristics symbol parameter test conditions min. typ. max. unit v ces(clamped) collector emitter clamped voltage (v ge = 0) i c = 2 ma 390 v i c = 2 ma, t j = - 40 c to 175 c 365 425 v v (br)ecs emitter collector break-down voltage (v ge = 0) i c = 75 ma 28 v i c = 75 ma, t j = - 40 c to 175 c 20 v v ge(clamped) gate emitter clamped voltage i g = 2 ma t j = - 40 c to 175 c 12 16 v i ces collector cut-off current (v ge = 0) v ce = 15 v, t j = 175 c 20 a v ce = 200 v, t j = 175 c 100 a i ges gate-emitter leakage current (v ce = 0) v ge = 10 v 625 a v ge = 10 v, t j = - 40 c to 175 c 450 830 a r ge gate emitter resistance 0 < v ge < v ge (clamped) 12 16 22 k r g gate resistance 1.6 k v ge(th) gate threshold voltage v ge =v ce , i c = 1 ma, t j = - 40 c 1.75 2.3 2.9 v v ge =v ce , i c = 1 ma 1.55 2.0 2.6 v v ge =v ce , i c = 1 ma, t j = 175 c 1.05 1.4 2.0 v v ce(sat) collector emitter saturation voltage v ge = 4.5 v, i c = 10 a 1.5 v v ge = 4.5 v, i c = 10 a, t j = - 40 c to 175 c 1.85 v v ge = 3.8 v, i c = 6 a 1.35 v v ge = 3.8 v, i c = 6 a, t j = - 40 c to 175 c 1.65 v
docid024506 rev 6 5/17 STGD19N40LZ electrical characteristics 17 table 5. dynamic electrical characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -730- pf c oes output capacitance - 85 - pf c res reverse transfer capacitance -4-pf q g gate charge v ce = 280 v, i c = 10 a, v ge = 5 v -17- nc table 6. switching on/off symbol parameter test conditions min. typ. max. unit t d(on) t r resistive load turn-on delay time rise time v cc = 14 v, r l = 1 , v ge = 5 v r g = 1 k -0.65 3.5 -s s t d(on) t r resistive load turn-on delay time rise time v cc = 14 v, r l = 1 , v ge = 5 v, r g = 1 k , t j = 150 c -0.65 3.8 -s s t d(off) t f dv/dt inductive load turn-off delay time fall time turn-off voltage slope v cc = 300 v, l = 1 mh i c = 10 a, v ge = 5 v, r g = 1 k - 13.5 5.5 105 - s s v/s t d(off) t f dv/dt inductive load turn-off delay time fall time turn-off voltage slope v cc = 300 v, l = 1 mh i c = 10 a, v ge = 5 v, r g = 1 k , t j = 150 c - 14.2 8 97 - s s v/s
electrical characteristics STGD19N40LZ 6/17 docid024506 rev 6 2.1 electrical characteristics (curves) figure 2. collector-emitter on voltage vs. temperature (i c = 6 a) figure 3. collector-emitter on voltage vs. temperature (i c = 10 a) figure 4. collector-emitter on voltage vs. temperature (v ge = 4.5 v) figure 5. self clamped inductive switch figure 6. output characteristics (t j = 25 c) figure 7. output characteristics (t j = -175 c) am17126v1 1.1 1.2 1.3 1.4 -75 -25 25 75 125 vce (sat) (v) tc (c) i c = 6 a v ge = 3.8 v v ge = 4.5 v v ge = 5 v am17127v1 1.4 1.5 1.6 1.7 -75 -25 25 75 125 vce (sat) (v) tc (c) i c = 10 a v ge = 4.5 v v ge = 3.8 v v ge = 5 v am17128v1 1.1 1.3 1.5 1.7 1.9 v ce (sat) -75 -25 25 75 125 t c (c) i c = 6 a i c = 10 a i c = 15 a v ge = 4.5 v (v) am17129v1 0 10 20 30 40 50 12345 i scis (a) l (mh) 25c 150c v cc = 24 v v ge = 5 v 0 t c = t c = am17130v1 0 10 20 30 40 50 60 02468 v ge = 3.5 v ge = 5 v v ge = 4 v v ge = 4.5 v ge = 5.5 v ge = 6 v i c (a) v ce (v) am17131v1 0 10 20 30 40 50 02468 v ge = 3.5 v ge = 5 v v ge = 4 v v ge = 4.5 v ge = 5.5 v ge = 6 v i c (a) v ce (v)
docid024506 rev 6 7/17 STGD19N40LZ electrical characteristics 17 figure 8. output characteristics (t j = -40 c) figure 9. transfer characteristics figure 10. collector cut-off current vs. temperature figure 11. normalized collector emitter voltage vs. temperature (i c = 2 ma) figure 12. normalized gate threshold voltage vs. temperature figure 13. normalized collector emitter on voltage vs. temperature (i c = 10 a) am17132v1 0 10 20 30 40 50 60 70 02468 v ge = 3.5 v v ge = 5 v v ge = 4 v v ge = 4.5 v v ge = 5.5 v v ge = 6 v i c (a) v ce (v) am17133v1 0 10 20 30 40 50 60 70 012345 v ce = 6 v i c (a) v ge (v) t j = -40c t j = -25c t j = 175c am17134v1 0.01 0.1 1 10 -75 -25 25 75 125 ices (a) tc (c) v ce = 200 v v ce = 350 v v ge = 0 am17135v1 0.985 0.99 0.995 1.005 -75 -25 25 75 125 tc (c) vces (norm) ic = 2 ma vge = 0 v 1 am17136v1 0.6 0.7 0.8 0.9 1 1.1 -75 -25 25 75 125 tc (c) v ge(th) (norm) v ce = v ge i c = 1 ma am17137v1 0.96 0.97 0.98 0.99 1 1.01 1.02 1.03 1.04 1.05 -75 -25 25 75 125 tc (c) v ge = 4.5 v i c = 10 a v ce(sat) (norm)
electrical characteristics STGD19N40LZ 8/17 docid024506 rev 6 figure 14. thermal impedance figure 15. transconductance vs. temperature am17170v1 8 9 10 11 12 13 -75 -25 25 75 125 gfs (s) t c (c) i c = 6 a v ce = 5 v
docid024506 rev 6 9/17 STGD19N40LZ test circuits 17 3 test circuits figure 16. inductive load switching and e scis test circuit figure 17. resistive load switching figure 18. gate charge test circuit figure 19. switching waveform am01504v1 am01504v2 l am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr ( vo f f ) tcross 90% 10%
package information STGD19N40LZ 10/17 docid024506 rev 6 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024506 rev 6 11/17 STGD19N40LZ package information 17 4.1 dpak (to-252) type a2 package information figure 20. dpak (to-252) type a2 package outline bw\sh$buhy
package information STGD19N40LZ 12/17 docid024506 rev 6 table 7. dpak (to-252) type a2 mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 4.95 5.10 5.25 e6.40 6.60 e1 5.10 5.20 5.30 e2.162.282.40 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 l1 2.60 2.80 3.00 l2 0.65 0.80 0.95 l4 0.60 1.00 r0.20 v2 0 8
docid024506 rev 6 13/17 STGD19N40LZ package information 17 figure 21. dpak (to-252) recommended footprint (a) a. all dimensions are in millimeters )3bb
package information STGD19N40LZ 14/17 docid024506 rev 6 4.2 packing information figure 22. tape outline for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
docid024506 rev 6 15/17 STGD19N40LZ package information 17 figure 23. reel outline for dpak (to-252) table 8. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e1.65 1.85n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t0.25 0.35 w15.7 16.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history STGD19N40LZ 16/17 docid024506 rev 6 5 revision history table 9. document revision history date revision changes 22-apr-2013 1 initial release. 20-may-2013 2 added figure 15. 17-apr-2014 3 modified title and features modified v ces(clamped) , v (br)ecs and i ges test conditions modified figure 5 and 9 updated section 4: package information minor text changes 04-jun-2014 4 updated features in cover page. 30-jul-2015 5 text and formatting changes throughout document. updated section 4: package information 05-oct-2016 6 updated figure 9: transfer characteristics . minor text changes.
docid024506 rev 6 17/17 STGD19N40LZ 17 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics ? all rights reserved

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