vishay siliconix SIE800DF new product document number: 73199 s-60784-rev. d, 08-may-06 www.vishay.com 1 n-channel 30-v (d-s) mosfet features ? extremely low q gd wfet technology for low switching losses ? trenchfet ? power mosfet ? ultra low thermal resistance using top-exposed polarpak ? package for double-sided cooling ? leadframe-based new encapsulated package - die not exposed - same layout regardless of die size ? low q gd /q gs ratio helps prevent shoot-through ? 100 % r g and uis tested applications ?vrm ? dc/dc conversion: high-side ? synchronous rectification product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ) silicon limit package limit 30 0.0072 at v gs = 10 v 90 50 12 nc 0.0115 at v gs = 4.5 v 73 50 package drawing ordering information: sie 8 00df-t1-e3 (lead (p b )-free) top v ie w bottom v ie w t op s u rface is connected to pins 1, 5, 6, and 10 10 d s s g d d s s g d polarpak 1 432 5 67 8 9 d dsg d 5 4 3 2 1 6 7 8 9 10 for related documents n -channel mosfet g d s notes: a. package limited is 50 a. b. surface mounted on 1" x 1" fr4 board. c. t = 10 sec. d. see solder profile ( http://www.vishay.com/doc?73257 ). the polarpak is a leadless package. t he end of the lead term inal is exposed copper (not plated) as a result of the singulati on process in manufacturing. a solder fi llet at the exposed copper tip cannot be guara nteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a sold ering iron is not recommended for leadless components. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 90 (silicon limit) a 50 a (package limit) t c = 70 c 50 a t a = 25 c 20.6 b, c t a = 70 c 16.5 b, c pulsed drain current i dm 60 continuous source-drain diode current t c = 25 c i s 50 a t a = 25 c 4.3 b, c single pulse avalanche current l = 0.1 mh i as 40 avalanche energy e as 80 mj maximum power dissipation t c = 25 c p d 104 w t c = 70 c 66 t a = 25 c 5.2 b, c t a = 70 c 3.3 b, c operating junction and storage temperature range t j , t stg - 50 to 150 c soldering recommendations (peak temperature) d, e 260 rohs compliant
www.vishay.com 2 document number: 73199 s-60784-rev. d, 08-may-06 vishay siliconix SIE800DF notes: a. surface mounted on 1" x 1" fr4 board. b. maximum under steady stat e conditions is 68 c/w. c. measured at source pin ( on the side of the package). notes: a. pulse test; pulse width 300 s, duty cycle 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, b t 10 sec r thja 20 24 c/w maximum junction-to-case (drain top) a steady state r thjc (drain) 1 1.2 maximum junction-to-case (source) a, c r thjc (source) 2.8 3.4 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 v v ds temperature coefficient v ds /t j i d = 250 a 34.5 mv/c v gs(th) temperature coefficient v gs(th) /t j - 6.7 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2.2 3.0 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 25 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 11 a 0.006 0.0072 v gs = 4 .5 v, i d = 9 a 0.0095 0.0115 forward transconductance a g fs v ds = 15 v, i d = 11 a 50 s dynamic b input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz 1600 pf output capacitance c oss 750 reverse transfer capacitance c rss 120 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 18.5 a 23 35 nc v ds = 15 v, v gs = 4.5 v, i d = 18.5 a 12 18 gate-source charge q gs 5.6 gate-drain charge q gd 3 gate resistance r g f = 1 mhz 1.3 1.95 turn-on delay time t d(on) v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 4.5 v, r g = 1 20 30 ns rise time t r 15 25 turn-off delay time t d(off) 15 25 fall time t f 815 turn-on delay time t d(on) v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 10 v, r g = 1 15 25 rise time t r 15 25 turn-off delay time t d(off) 25 40 fall time t f 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 50 a pulse diode forward current a i sm 60 body diode voltage v sd i s = 10 a 0.8 1.2 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c 45 70 ns body diode reverse recovery charge q rr 41 65 nc reverse recovery fall time t a 21 ns reverse recovery rise time t b 24
document number: 73199 s-60784-rev. d, 08-may-06 www.vishay.com 3 vishay siliconix SIE800DF typical characteristics 25 c, unless noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 10 20 30 40 50 60 0.0 0.4 0. 8 1.2 1.6 2.0 v gs = 10 thr u 5 v 3 v v ds ? drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d ? i d 4 v 0 102030405060 v gs = 10 v i d ? drain c u rrent (a) v gs = 4.5 v r ) n o ( s d m ) ( e c n a t s i s e r - n o ? 0.004 0.006 0.00 8 0.010 0.012 0.014 0 2 4 6 8 10 0 5 10 15 20 25 i d = 1 8 .5 a ) v ( e g a t l o v e c r u o s - o t - e t a g ? q g ? total gate charge (nc) v s g v ds = 24 v v ds = 15 v transfer characteristics capacitance on-resistance vs. junction temperature 0 5 10 15 20 25 1.5 2.0 2.5 3.0 3.5 4.0 25 c t c = 125 c - 55 c v gs ? gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d ? i d 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 c rss c oss c iss v ds ? drain-to-so u rce v oltage ( v ) ) f p ( e c n a t i c a p a c ? c 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v t j ? j u nction temperat u re (c) r ) n o ( s d e c n a t s i s e r - n o ? ) d e z i l a m r o n ( v gs = 4.5 v i d = 10. 8 a
www.vishay.com 4 document number: 73199 s-60784-rev. d, 08-may-06 vishay siliconix SIE800DF typical characteristics 25 c, unless noted source-drain diode forward voltage threshold voltage 1.0 1.2 1 10 60 0.00 0.2 0.4 0.6 0. 8 t j = 25 c t j = 150 c v sd ? so u rce-to-drain v oltage ( v ) ) a ( t n e r r u c e c r u o s ? i s 1.0 1.4 1. 8 2.2 2.6 3.0 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a t j ? temperat u re (c) v ) h t ( s g ) v ( on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0246 8 10 i d = 10. 8 a v gs ? gate-to-so u rce v oltage ( v ) r ) n o ( s d ( ) e c n a t s i s e r - n o e c r u o s - o t - n i a r d ? t a = 25 c t a = 125 c 0.012 0.00 8 0.004 0.016 0.020 0 30 50 10 20 ) w ( r e w o p time (sec) 40 10 1000 1 0.1 0.01 100 safe operating area, junction-to-ambient *limited b y r ds(on) 100 1 0.1 1 10 100 0.01 ) a ( t n e r r u c n i a r d ? i d 0.1 1 ms 10 ms 100 ms dc v ds ? drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified 1 s 10 s t a = 25 c single p u lse 10
document number: 73199 s-60784-rev. d, 08-may-06 www.vishay.com 5 vishay siliconix SIE800DF typical characteristics 25 c, unless noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dis- sipation limit for cases where additional heat sinking is used. it is used to determine the current rating, when this rating fal ls below the package limit. current derating* 0 20 40 60 8 0 100 0 i d ) a ( t n e r r u c n i a r d ? t c ? case temperat u re (c) 120 150 125 100 75 50 25 package limited power derating, junction-to-case 0 20 40 60 8 0 100 120 25 50 75 100 125 150 t c ? case temperat u re (c) ) w ( n o i t a p i s s i d r e w o p
www.vishay.com 6 document number: 73199 s-60784-rev. d, 08-may-06 vishay siliconix SIE800DF typical characteristics 25 c, unless noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a com posite of all qualified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?73199 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 110 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (sec) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1. d u ty cycle, d = 2. per unit base = r thja = 55 c/ w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm normalized thermal transient impedance, junction-to-case (drain top) 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (sec) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 0.02 0.05 normalized thermal transient impedance, junction-to-source 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (sec) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 0.02
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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