PCP1208 bipolar transistor 200v, 0.7a low v ce (sat) npn single pcp 52213 tkim tc-00002872/72512 tkim/12611cb tkim tc-00002563 no.1836-1/7 http://onsemi.com semiconductor components industries, llc, 2013 may, 2013 features ? v ceo =200v, i c =0.7a ? high allowable power dissipation ? halogen free compliance ? low collector-to-emitter saturation voltage v ce (sat)=0.115v(typ.)@i c =0.35a ? high-speed switching t f =70ns(typ.)@i c =0.3a speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 220 v collector-to-emitter voltage v ceo 200 v emitter-to-base voltage v ebo 8v collector current i c 0.7 a collector current (pulse) i cp 2a base current i b 140 ma collector dissipation p c when mounted on ceramic substrate (450mm 2 0.8mm) 1.3 w tc=25 c 3.5 w junction temperature tj 150 c storage temperature tstg -55 to +150 c package dimensions unit : mm (typ) 7008b-003 ordering number : ena1836b ordering & package information device package shipping note PCP1208-td-h pcp (sc-62, sot-89, to-243) 1,000 pcs./reel pb free and halogen free packing type: td marking electrical connection td 1 : base 2 : collecto r 3 : emitter pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 top view bottom view 0.75 PCP1208-td-h qo lot no. 1 3 2 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
PCP1208 no.1836-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =100v, i e =0a 1 a emitter cutoff current i ebo v eb =4v, i c =0a 1 a dc current gain h fe v ce =5v, i c =100ma 200 560 gain-bandwidth product f t v ce =10v, i c =100ma 120 mhz output capacitance cob v cb =10v, f=1mhz 9 pf collector-to-emitter saturation voltage v ce (sat) i c =0.35a, i b =35ma 115 200 mv base-to-emitter saturation voltage v be (sat) i c =0.35a, i b =35ma 0.82 1.2 v collector-to-base breakdown voltage v (br)cbo i c =10 a, i e =0a 220 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma, r be = 200 v emitter-to-base breakdown voltage v (br)ebo i e =10 a, i c =0a 8 v turn-on time t on see speci ed test circuit. 50 ns storage time t stg 2 s fall time t f 70 ns switching time test circuit r b v cc =100v i c =10i b1 = --10i b2 =0.3a + 50 input output r l 820 f pw=50 s i b1 d.c. 1% i b2
PCP1208 no.1836-3/7 i c -- v ce collector-to-emitter voltage, v ce -- v collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector current, i c -- a h fe -- i c i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a dc current gain, h fe it15952 0 1.0 0.2 0.1 0.4 0.3 0.6 0.5 0.8 0.9 0.7 0 0.1 0.7 0.6 0.5 0.4 0.3 0.2 0.8 0.9 1.0 i b =0ma 2ma 4ma 6ma 8ma 10ma 20ma 30ma 40ma 50ma 60ma 80ma it15953 010 1 456789 3 2 0 0.02 0.14 0.12 0.10 0.08 0.06 0.04 0.16 0.18 0.20 i b =0 a 200 a 100 a 300 a 400 a 500 a 100ma 600 a 1ma 900 a 800 a 700 a it15955 2 10 100 1.0 3 5 7 2 3 5 7 1000 2 3 5 7 0.01 3 25 0.1 1.0 73 257 ta=75 c 25 c v ce =5v 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 it15954 0.4 0.3 0.1 0.2 0.9 0.8 0.7 0.6 0.5 1.0 v ce =5v 25 c --25 c ta=75 c --25 c cob -- v cb v ce (sat) -- i c h fe -- i c collector current, i c -- a dc current gain, h fe collector current, i c -- a gain-bandwidth product, f t -- mhz collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v f t -- i c 0.1 1.0 23 57 2 10 100 357 2357 5 3 2 7 10 5 7 100 1.0 3 2 it15958 it15959 0.1 0.01 7 5 3 2 1.0 7 5 3 2 0.1 1.0 0.01 2 3 5 7 2 3 5 7 ta=75 c 25 c --25 c i c / i b =10 it15957 0.01 0.1 23 57 23 5 1.0 7 5 3 10 2 7 100 1000 7 5 3 2 v ce =10v it15956 10 1.0 3 5 7 2 100 3 5 7 2 100 3 5 7 2 0.01 3 257 3 257 1.0 0.1 ta=25 c v ce =5.0v 0.5v 2.0v f=1mhz 1.0v
PCP1208 no.1836-4/7 v be (sat) -- i c v ce (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v p c -- ta collector dissipation, p c -- w ambient temperature, ta -- c a s o 0.1 0.01 7 5 3 27 5 3 2 1.0 1.0 0.1 2 3 5 7 it15961 i c / i b =10 ta= --25 c 75 c it15960 0.1 0.01 7 5 3 2 1.0 7 5 3 2 0.1 10 0.01 2 3 5 7 1.0 2 3 5 7 2 3 5 7 ta=75 c 25 c --25 c i c / i b =20 25 c it15963 25 0 50 75 100 150 125 175 0 0.6 0.4 0.2 0.8 1.0 1.2 1.3 1.4 when mounted on ceramic substrate (450mm 2 0.8mm) it16014 0.001 0.01 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 0.1 10 1.0 1.0 0.01 2 2 5 37 0.1 2 5 37 1000 25 37 10 25 37 100 5 37 i cp =2a i c =0.7a dc operation (ta=25 c) 100ms 100 s 1ms 10ms <10 s 500 s ta=25 c single pulse when mounted on ceramic substrate (450mm 2 0.8mm)
PCP1208 no.1836-5/7 bag packing speci cation PCP1208-td-h
PCP1208 no.1836-6/7 outline drawing land pattern example PCP1208-td-h mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.8 1.5 3.7 1.5 3.0 1.0 1.0
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