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this is information on a product in full production. july 2014 docid023799 rev 4 1/13 STR2N2VH5 n-channel 20 v, 0.025 ? typ., 2.3 a stripfet? h5 power mosfet in a sot-23 package datasheet ? production data figure 1. internal schematic diagram features ? low on-resistance r ds(on) ? high avalanche ruggedness ? low gate drive power loss applications ? switching applications description this device is an n-channel power mosfet developed using stmicroelectronics? stripfet? h5 technology. the device has been optimized to achieve very low on-state resistance, contributing to a fom that is among the best in its class. sot-23 1 2 3 order code v ds r ds(on) max i d p tot STR2N2VH5 20 v 0.03 ? (v gs =4.5 v) 2.3 a 0.35 w table 1. device summary order code marking packages packaging STR2N2VH5 std1 sot-23 tape and reel www.st.com
contents STR2N2VH5 2/13 docid023799 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid023799 rev 4 3/13 STR2N2VH5 electrical ratings 13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 20 v v gs gate-source voltage 8 v i d (1) 1. this value is rated according to r thj-pcb drain current (continuous) at t pcb = 25 c 2.3 a i d (1) drain current (continuous) at t pcb = 100 c 1.4 a i dm (1)(2) 2. pulse width is limited by safe operating area drain current (pulsed) 9.2 a p tot (1) total dissipation at t pcb = 25 c 0.35 w t stg storage temperature - 55 to 150 c t j max. operating junction temperature c table 3. thermal data symbol parameter value unit r thj-pcb (1) 1. when mounted on 1 inch2 fr-4, 2 oz cu, t< 10 sec. thermal resistance junction-pcb max 357 c/w
electrical characteristics STR2N2VH5 4/13 docid023799 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 20 v i dss zero gate voltage drain current v gs = 0, v ds = 20 v 1 a v gs = 0, v ds = 20 v, t c =125 c 10 a i gss gate-body leakage current v ds = 0, v gs = 8 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 0.7 v r ds(on) static drain-source on-resistance v gs = 4.5 v, i d = 2 a 0.025 0.03 ? v gs = 2.5 v, i d = 2 a 0.031 0.04 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 16 v, f = 1 mhz - 367 - pf c oss output capacitance - 92 - pf c rss reverse transfer capacitance -16-pf q g total gate charge v dd = 16 v, i d = 2 a, v gs = 4.5 v (see figure 14 ) -4.6-nc q gs gate-source charge - 0.9 - nc q gd gate-drain charge - 1 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) voltage delay time v dd = 16 v, i d = 2 a, r g = 4.7 ? , v gs = 4.5 v (see figure 15 and figure 18 ) -4.8-ns t r (v) voltage rise time - 14.4 - ns t d (off) current fall time - 17 - ns t f crossing time - 4 - ns
docid023799 rev 4 5/13 STR2N2VH5 electrical characteristics 13 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 2.3 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 9.2 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage v gs = 0, i sd = 2 a - 1.1 v t rr reverse recovery time i sd = 2 a, di/dt = 100 a/s v dd = 16 v, t j = 150 c (see figure 18 ) -10 ns q rr reverse recovery charge - 24 nc i rrm reverse recovery current - 4.8 a
electrical characteristics STR2N2VH5 6/13 docid023799 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 1ms 100s 0.1 tj=150c tpcb=25c single pulse 10ms 10 am18126v1 single pulse =0.5 0.05 0.02 0.01 0.1 0.2 k 10 t p (s) -4 10 -3 10 -2 10 -1 10 -5 10 -3 10 -2 10 -1 10 0 pcb am18127v1 i d 20 12 4 0 0 1 v ds (v) 2 (a) 3 0.5v 1.5v v gs =2.5, 3.5, 4.5, 5.5, 6.5 v 8 16 4 am18128v1 i d 16 8 0 0 0.4 v gs (v) 0.8 (a) 0.2 0.6 1 4 12 20 v ds =4v 1.2 am18129v1 v gs 6 4 2 0 0 4 q g (nc) (v) v dd =10v i d =2a 2 6 am18130v1 r ds(on) 24.8 24.4 24 1 2 i d (a) (m ) 1.5 2.5 25.2 v gs =4.5v 3 3.5 25.6 26 am18132v1
docid023799 rev 4 7/13 STR2N2VH5 electrical characteristics 13 figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on-resistance vs temperature figure 11. normalized v (br)dss vs temperature figure 12. source-drain diode forward characteristics c 100 10 0 8 v ds (v) (pf) 4 12 ciss coss crss 16 am18133v1 v gs(th) 0.6 0.4 0.2 0 -55 -5 t j (c) (norm) -30 0.8 70 20 45 95 i d =250a 120 1 1.2 am18134v1 r ds(on) 1.4 0.8 0.4 0 t j (c) (norm) 0.2 0.6 1 1.2 1.6 i d =2a v gs =10v -55 -5 -30 70 20 45 95 120 am18135v1 v (br)dss t j (c) (norm) 0.9 0.95 1 1.05 1.1 i d =1ma -55 -5 -30 70 20 45 95 120 am18136v1 v sd 0.5 1.3 i sd (a) (v) 0.9 1.7 2.1 0.5 0.6 0.7 0.8 t j =-55c t j =150c t j =25c 0.9 am18137v1
test circuits STR2N2VH5 8/13 docid023799 rev 4 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid023799 rev 4 9/13 STR2N2VH5 package mechanical data 13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STR2N2VH5 10/13 docid023799 rev 4 figure 19. sot-23 mechanical drawing table 8. sot-23 mechanical data dim. mm min. typ. max. a0.89 1.40 a1 0 0.10 b0.30 0.51 c 0.085 0.18 d2.75 3.04 e0.85 1.05 e1 1.70 2.10 e1.20 1.75 h2.10 3.00 l0.60 s0.35 0.65 l1 0.25 0.55 a0 8 0053390_i
docid023799 rev 4 11/13 STR2N2VH5 package mechanical data 13 figure 20. sot-23 recommended footprint (a) a. dimensions are in mm. 2.89 0.95 0.48 0.97 0.99 sot-23 footp_i
revision history STR2N2VH5 12/13 docid023799 rev 4 5 revision history table 9. document revision history date revision changes 19-oct-2012 1 first release. 14-jan-2013 2 modified: r ds(on) values 19-mar-2014 3 ? the part number stt5n2vh5 has been moved to a separate datasheet ? modified: the entire typical values in table 5 , 6 and 7 ? added: section 2.1: electrical characteristics (curves) ? minor text changes 25-jul-2014 4 ? modified: title, description and features ? updated: figure 12 ? minor text changes
docid023799 rev 4 13/13 STR2N2VH5 13 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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