document number: 94075 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 hexfred ? ultrafast soft recovery diode, 80 a hfa80fa120p vishay semiconductors features ? fast recovery time characteristic ? electrically isolated base plate ? large creepage distance between terminal ? simplified mechanical designs, rapid assembly ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description/applications the dual diode series configu ration (hfa80fa120p) is used for output rectification or freewheeling/clamping operation and high voltage application. the semiconductor in the sot-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. these modules are intended fo r general applications such as hv power supplies, electron ic welders, motor control and inverters. product summary v r 1200 v v f (typical) 2.6 v t rr (typical) 25 ns i f(dc) at t c 40 a at 78 c s ot-227 absolute maximum ratings parameter symbol test conditions max. units cathode to anode voltage v r 1200 v continuous forward current i f t c = 78 c 40 a single pulse forward current i fsm t j = 25 c 400 maximum repetitive forward current i frm rated v r, square wave, 20 khz, t c = 60 c 72 maximum power dissipation p d t c = 25 c 178 w t c = 100 c 71 rms isolation voltage v isol any terminal to case, t = 1 min 2500 v operating junction and storage temperature range t j , t stg - 55 to + 150 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 1200 - - v forward voltage v fm i f = 25 a see fig. 1 -2.63.0 i f = 40 a - 2.9 3.3 i f = 80 a, t j = 125 c - 3.4 - reverse leakage current i rm v r = v r rated see fig. 2 -2.0-a t j = 125 c, v r = 0.8 x v r rated - 0.5 2 ma junction capacitance c t v r = 200 v see fig. 3 - 43 - pf
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94075 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 hfa80fa120p vishay semiconductors hexfred ? ultrafast soft recovery diode, 80 a dynamic recovery characteristics (t c = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 25 - ns t j = 25 c i f = 40 a di f /dt = - 200 a/s v r = 200 v -52- t j = 125 c - 110 - peak recovery current i rrm t j = 25 c - 5.9 - a t j = 125 c - 10.8 - reverse recovery charge q rr t j = 25 c - 160 - nc t j = 125 c - 630 - thermal - mechanical specifications parameter symbol te st conditions min. typ. max. units junction to case, si ngle leg conducting r thjc --0.7 c/w junction to case, both legs conducting - - 0.35 case to heatsink r thcs flat, greased and surface - 0.05 - weight -30- g mounting torque -1.3-nm
document number: 94075 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 hfa80fa120p hexfred ? ultrafast soft reco very diode, 80 a vishay semiconductors fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 100 10 i f - instantaneous forward current (a) v f - forward voltage drop (v) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t j = 150 c t j = 125 c t j = 25 c 0.0001 1 10 0.1 0.01 0.001 i r - reverse current (a) v r - reverse voltage (v) 200 400 600 800 1000 1200 0 t j = 150 c t j = 125 c t j = 25 c 100 10 1000 c t - junction capacitance (pf) v r - reverse voltage (v) 10 100 1000 10 000 1 t j = 25 c 0.01 0.001 0.0001 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 10 single pulse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94075 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 hfa80fa120p vishay semiconductors hexfred ? ultrafast soft recovery diode, 80 a fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 0 20 40 60 80 100 120 160 140 allowable case temperature (c) i f(av) - average forward current (a) 20 10 30 40 70 60 50 0 dc square wave (d = 0.50) see note (1) 0 20 40 60 80 200 100 120 140 160 180 average power loss (w) i f(av) - average forward current (a) 20 10 30 40 50 60 0 rms limit d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc 20 40 60 80 140 120 100 t rr (ns) di f /dt (a/s) 1000 100 i f = 40 a, t j = 125 c i f = 20 a, t j = 125 c i f = 40 a, t j = 25 c i f = 20 a, t j = 25 c 0 800 600 400 200 1800 1600 1400 1200 1000 1000 100 q rr (nc) di f /dt (a/s) i f = 40 a, t j = 25 c i f = 20 a, t j = 25 c i f = 40 a, t j = 125 c i f = 20 a, t j = 125 c
document number: 94075 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 hfa80fa120p hexfred ? ultrafast soft reco very diode, 80 a vishay semiconductors fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94075 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 hfa80fa120p vishay semiconductors hexfred ? ultrafast soft recovery diode, 80 a ordering information table circuit configuration links to related documents dimensions www.vishay.com/doc?95036 packaging information www.vishay.com/doc?95037 1 2 3 4 5 6 device code 5 13 24 6 hf a 80 fa 120 p - hexfred ? family - process designator (a = electron irradiated) - average current (80 = 80 a) - package outline (fa = sot-227) - voltage rating (120 = 1200 v) - p = lead (pb)-free 1 4 2 3
document number: 95036 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 28-aug-07 1 sot-227 outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensioning and toleranc ing per ansi y14.5m-1982 ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 4 12 3 12.50 (0.492) 7.50 (0.295) ? 4.40 (0.173) ? 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 6.25 (0.246) 25.70 (1.012) 25.20 (0.992) -b- r full chamfer 2.00 (0.079) x 45 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303) 4 x 2.10 (0.082) 1.90 (0.075) -c- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) mmm 0.25 (0.010) ca b 4 x m4 nuts
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