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strong ir fet? irfr7546pbf irfu7546pbf 1 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 hexfet ? power mosfet d s g application ?? brushed motor drive applications ?? bldc motor drive applications ?? battery powered circuits ?? half-bridge and full-bridge topologies ?? synchronous rectifier applications ?? resonant mode power supplies ?? or-ing and redundant power switches ?? dc/dc and ac/dc converters ?? dc/ac inverters benefits ?? improved gate, avalanche and dynamic dv/dt ruggedness ?? fully characterized capacitance and avalanche soa ?? enhanced body diode dv/dt and di/dt capability ?? lead-free, rohs compliant v dss 60v r ds(on) typ. 6.6m ? ? max 7.9m ? ? i d (silicon limited) 71a ? i d (package limited) 56a ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature d-pak irfr7546pbf i-pak irfu7546pbf g d s gate drain source d g s d g s base part number package type standard pack orderable part number form quantity irfr7546pbf tube 75 irfr7546pbf tape and reel 2000 IRFR7546TRPBF irfu7546pbf i-pak tube 75 irfu7546pbf d-pak 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 5 10 15 20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 43a t j = 25c t j = 125c 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 i d , d r a i n c u r r e n t ( a ) limited by package downloaded from: http:///
? irfr/u7546pbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 71 ? a ? i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 50 i dm pulsed drain current ?? 280 p d @t c = 25c maximum power dissipation 99 w linear derating factor 0.66 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 120 units e as (thermally limited) single pulse avalanche energy ?? 178 i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? CCC 1.52 c/w ? r ? ja junction-to-ambient (pcb mount) ? CCC 50 r ? ja junction-to-ambient ? CCC 110 i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 56 symbol parameter max. mj ? static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 47 CCC mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC 6.6 7.9 m ?? v gs = 10v, i d = 43a v gs(th) gate threshold voltage 2.1 CCC 3.7 v v ds = v gs , i d = 100a i dss drain-to-source leakage current CCC CCC 1.0 a v ds = 60v, v gs = 0v CCC CCC 150 v ds = 60v,v gs = 0v,t j =125c i gss gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v r g gate resistance CCC 1.5 CCC ?? CCC 8.5 CCC ? v gs = 6.0v, i d = 21a ? notes: ?? calculated continuous current based on maximum allowable j unction temperature. bond wire current limit is 56a by source bonding technology. note that current limitatio ns arising from heating of the device leads may occur with some lead mounting arrangements. (refer to an-1140) ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 130h, r g = 50 ? , i as = 43a, v gs =10v. ?? i sd ? 43a, di/dt ? 1020a/s, v dd ? v (br)dss , t j ?? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same c harging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ?? when mounted on 1" square pcb (fr-4 or g-10 material). fo r recommended footprint and soldering techniques refer to application note #an-994 : http://www.irf.com/technical-info/appnotes/an-994.pdf ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 19a, v gs =10v. downloaded from: http:///
? irfr/u7546pbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 56 CCC CCC s v ds = 25v, i d = 43a q g total gate charge CCC 58 87 i d = 43a q gs gate-to-source charge CCC 14 CCC v ds = 30v q gd gate-to-drain charge CCC 18 CCC v gs = 10v q sync total gate charge sync. (qg C qgd) CCC 26 CCC t d(on) turn-on delay time CCC 8.1 CCC ns v dd = 30v t r rise time CCC 28 CCC i d = 43a t d(off) turn-off delay time CCC 36 CCC r g = 2.7 ?? t f fall time CCC 20 CCC v gs = 10v ? c iss input capacitance CCC 3020 CCC pf ? v gs = 0v c oss output capacitance CCC 280 CCC v ds = 25v c rss reverse transfer capacitance CCC 180 CCC ? = 1.0mhz, see fig.7 c oss eff.(er) effective output capacitance (energy related) CCC 290 CCC v gs = 0v, v ds = 0v to 48v ? c oss eff.(tr) output capacitance (time related) CCC 370 CCC v gs = 0v, v ds = 0v to 48v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 71 ? a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 280 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c,i s = 43a,v gs = 0v ? dv/dt peak diode recovery dv/dt ? CCC 12 CCC v/ns t j = 175c,i s = 43a,v ds = 60v ? t rr reverse recovery time CCC 26 CCC ns t j = 25c v dd = 51v CCC 29 CCC t j = 125c i f = 43a, q rr reverse recovery charge CCC 22 CCC nc t j = 25c di/dt = 100a/s ??? CCC 30 CCC t j = 125c ? i rrm reverse recovery current CCC 1.5 CCC a t j = 25c ? nc ? d s g downloaded from: http:///
? irfr/u7546pbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 fig 6. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 43a v gs = 10v fig 4. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v ? 60s pulse width fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage fig 5. typical transfer characteristics 0 1020304050607080 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v v ds = 12v i d = 43a fig 8. typical gate charge vs. gate-to-source voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss downloaded from: http:///
? irfr/u7546pbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 -10 0 10 20 30 40 50 60 70 v ds, drain-to-source voltage (v) 0.0 0.1 0.2 0.3 0.4 0.5 e n e r g y ( j ) 0.1 1 10 v ds , drain-tosource voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc limited by package fig 10. maximum safe operating area 0 20 40 60 80 100 120 140 160 180 200 i d , drain current (a) 0 10 20 30 40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 5.5v v gs = 6.0v v gs = 7.0v v gs = 8.0v v gs =10v fig 11. drain-to-source breakdown voltage fig 13. typical on-resista nce vs. drain current 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 64 66 68 70 72 74 76 78 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma fig 9. typical source-drain diode forward voltage fig 12. typical c oss stored energy downloaded from: http:///
? irfr/u7546pbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figure 14) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 43a fig 15. avalanche current vs. pulse width downloaded from: http:///
? irfr/u7546pbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 12 i r r m ( a ) i f = 43a v r = 51v t j = 25c t j = 125c fig 17. threshold voltage vs. temperature 0 200 400 600 800 1000 di f /dt (a/s) 0 50 100 150 200 q r r ( n c ) i f = 43a v r = 51v t j = 25c t j = 125c fig 21. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 50 100 150 200 q r r ( n c ) i f = 28a v r = 51v t j = 25c t j = 125c fig 18. typical recovery current vs. dif/dt fig 20. typical stored charge vs. dif/dt -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a i d = 250a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 12 i r r m ( a ) i f = 28a v r = 51v t j = 25c t j = 125c downloaded from: http:///
? irfr/u7546pbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ? downloaded from: http:///
? irfr/u7546pbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ d-pak (to-252aa) package outline (dimensions are shown in millimeters (inches)) d-pak (to-252aa) part marking information international assembled on ww 16, 2001 in the assembly line "a" or note: "p" in assembly line position example: lot code 1234 this is an irfr120 with assembly indicates "lead-free" product (optional) p = designates lead-free a = assembly site code part number week 16 date code year 1 = 2001 rectifier international logo lot code assembly 34 12 irfr120 116a line a 34 rectifier logo irfr120 12 assembly lot code year 1 = 2001 date code part number week 16 "p" in assembly line position indicates "lead-free" qualification to the consumer-level p = designates lead-free product qualified to the consumer level (optional) downloaded from: http:///
? irfr/u7546pbf 10 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 i-pak (to-251aa) package outline (dimensions are shown in millimeters (inches)) i-pak (to-251aa) part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ 78 line a logo international rectifier or product (optional) p = designates lead-free a = assembly site code irfu120 part number week 19 date code year 1 = 2001 rectifier international logo assembly lot code irfu120 56 date code part number lot code assembly 56 78 year 1 = 2001 week 19 119a indicates lead-free" assembled on ww 19, 2001 in the assembly line "a" note: "p" in assembly line position example: with assembly this is an irfu120 lot code 5678 downloaded from: http:///
? irfr/u7546pbf 11 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch d-pak (to-252aa) tape & reel information (dimensions are shown in millimeters (inches)) downloaded from: http:///
? irfr/u7546pbf 12 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level d-pak msl1 i-pak n/a rohs compliant yes revision history date comment 11/7/2014 ?? updated e as (l =1mh) = 178mj on page 2 ?? updated note 10 limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 19a, v gs =10v on page 2 ?? updated package outline on page 9 & 10 downloaded from: http:///

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