1 2N6394 series preferred device silicon controlled rectifiers reverse blocking thyristors designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. ? glass passivated junctions with center gate geometry for greater parameter uniformity and stability ? small, rugged, thermowatt construction for low thermal resistance, high heat dissipation and durability ? blocking voltage to 800 volts ? device marking: logo, device type, e.g., 2N6394, date code *maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive offstate voltage (note 1.) (t j = 40 to 125 c, sine wave, 50 to 60 hz, gate open) 2N6394 2n6395 2n6397 2n6399 v drm, v rrm 50 100 400 800 volts on-state rms current (180 conduction angles; t c = 90 c) i t(rms) 12 a peak non-repetitive surge current (1/2 cycle, sine wave, 60 hz, t j = 90 c) i tsm 100 a circuit fusing (t = 8.3 ms) i 2 t 40 a 2 s forward peak gate power (pulse width 1.0 m s, t c = 90 c) p gm 20 watts forward average gate power (t = 8.3 ms, t c = 90 c) p g(av) 0.5 watts forward peak gate current (pulse width 1.0 m s, t c = 90 c) i gm 2.0 a operating junction temperature range t j 40 to +125 c storage temperature range t stg 40 to +150 c *indicates jedec registered data 1. v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. scrs 12 amperes rms 50 thru 800 volts preferred devices are recommended choices for future use and best overall value. device package shipping ordering information 2N6394 to220ab 500/box 2n6395 to220ab 2n6397 to220ab www.kersemi.com 500/box 500/box k g a pin assignment 1 2 3 anode gate cathode 4 anode 2n6399 to220ab 500/box to220ab case 221a style 3 1 2 3 4 marking diagram yy ww 639x x = 4, 5, 7 or 9 yy = year ww = work week
2N6394 series www.kersemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 2.0 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t c = 25 c unless otherwise noted.) characteristic symbol min typ max unit off characteristics *peak repetitive forward or reverse blocking current (v ak = rated v drm or v rrm , gate open) t j = 25 c t j = 125 c i drm , i rrm 10 2.0 m a ma on characteristics *peak forward onstate voltage (note 2.) (i tm = 24 a peak) v tm 1.7 2.2 volts *gate tri gger current (continuous dc) (v d = 12 vdc, r l = 100 ohms) i gt 5.0 30 ma *gate tri gger v oltage (continuous dc) (v d = 12 vdc, r l = 100 ohms) v gt 0.7 1.5 volts gate n ontrigger v oltage (v d = 12 vdc, r l = 100 ohms, t j = 125 c) v gd 0.2 volts *holding current (v d = 12 vdc, initiating current = 200 ma, gate open) i h 6.0 50 ma turn-on time (i tm = 12 a, i gt = 40 madc, v d = rated v drm ) t gt 1.0 2.0 m s turn-off time (v d = rated v drm ) (i tm = 12 a, i r = 12 a) (i tm = 12 a, i r = 12 a, t j = 125 c) t q 15 35 m s dynamic characteristics critical rateofrise of off-state voltage exponential (v d = rated v drm , t j = 125 c) dv/dt 50 v/ m s *indicates jedec registered data 2. pulse test: pulse width 300 m sec, duty cycle 2%.
2N6394 series 3 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode forward blocking region i rrm at v rrm (off state) c t , maximum allowable case temperature ( c) 6.0 120 90 100 110 130 60 a = 30 0 1.0 2.0 3.0 8.0 a = conduction angle i t(av) , average onstate forward current (amps) a 90 p , average power (watts) (av) 12 0 4.0 8.0 20 t j 125 c i t(av) , average onstate current (amps) 7.0 0 1.0 2.0 3.0 8.0 a = conduction angle a 4.0 5.0 7.0 180 dc 10 2.0 6.0 18 14 16 4.0 5.0 6.0 60 a = 30 90 180 dc 125 95 105 115 figure 1. current derating figure 2. maximum onstate power dissipation www.kersemi.com
2N6394 series 4 1.0 0.02 0.03 0.05 0.07 0.1 100 0.2 0.3 0.5 0.7 0.2 0.3 0.5 1.0 2.0 1.2 0.1 z q jc(t) = r q jc ? r(t) 1.0 60 surge is preceded and followed by rated current t j = 125 c f = 60 hz number of cycles 70 80 90 100 20 2.0 3.0 4.0 6.0 8.0 10 0.1 0.4 0.01 t, time (ms) 3.0 5.0 50 0.2 0.3 0.5 0.7 7.0 5.0 1.0 2.0 10 50 3.0 20 30 70 v th , instantaneous on-state voltage (volts) 2.8 4.4 3.6 5.2 6.0 2.0 30 50 100 200 300 500 2.0 k 10 3.0 k 5.0 k 10 k 1.0 k i , peak surge current (amp) tsm r(t), transient thermal resistance (normalized) tm i , instantaneous on-state current (amps) t j = 25 c 125 c 1 cycle 55 65 75 85 95 figure 3. onstate characteristics figure 4. maximum nonrepetitive surge current figure 5. thermal response www.kersemi.com
2N6394 series 5 i , holding current (ma) h typical characteristics 140 120 100 80 60 40 0 -60 30 -20 -40 20 t j , junction temperature ( c) 20 10 3.0 3.0 1.0 0.7 0.5 0.3 5.0 2.0 offstate voltage = 12 v offstate voltage = 12 v 30 50 20 10 5.0 70 7.0 140 120 100 80 60 40 0 -20 -40 20 t j , junction temperature ( c) 200 100 50 20 10 5.0 0.2 1.0 0.5 2.0 pulse width ( s) i gtm i gt v gt 140 120 100 80 60 40 0 -60 1.0 -20 -40 20 t j , junction temperature ( c) 0.8 0.6 0.4 0.5 , peak g ate c urrent (ma) 3.0 100 200 300 16 0 , g ate tri gg er v o lta g e (v o lt s ) 0.7 1.1 0.9 offstate voltage = 12 v offstate voltage = 12 v 7.0 t j = -40 c 25 c 100 c , gate trigger current (normalized) figure 6. typical gate trigger current versus pulse width figure 7. typical gate trigger current versus temperature figure 8. typical gate trigger voltage versus temperature figure 9. typical holding current versus temperature www.kersemi.com
2N6394 series 6 package dimensions to220ab case 221a07 issue aa style 3: pin 1. cathode 2. anode 3. gate 4. anode notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.022 0.36 0.55 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 a k l v g d n z h q f b 123 4 t seating plane s r j u t c www.kersemi.com
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