elektronische bauelemente SSD15P10 -15a, -100v, r ds(o ) 90m" p-ch enhancement mode power mosfet 01-jun-2017 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 252(d - pack) 15p10 rohs compliant product a suffix of -c specifies halogen free description the SSD15P10 is the highest performance trench p-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications. the SSD15P10 meet the rohs and green product with function reliability approved. features r ds(on) Q 90m6 @v gs = -10v r ds(on) Q 110m6 @v gs = -4.5v advanced high cell density trench technology super low gate charge green device available to-252 package marking package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -100 v gate-source voltage v gs 20 v t c =25c -15 a continuous drain current, @ v gs =10v 1 t c =100c i d -10 a pulsed drain current 2 i dm -60 a power dissipation 1 t c =25c p d 50 w operating junction and storage temperature range t j , t stg -55 ~ 175 c thermal resistance ratings maximum thermal resistance junction-ambient 1 (max). 75 maximum thermal resistance junction-ambient r ja 132 maximum thermal resistance junction-case 1 (max). r jc 3 c / w a c d n o p g e f h k j m b millimeter millime ter ref. min. max. ref. min. max. a 6. 35 6.90 j 2.336 ref. b 4.95 5.53 k 0.89 ref. c 2.10 2.50 m 0.45 1.14 d 0.665 typ. n 1.55 typ. e 6.0 7.5 o 0 0.13 f 2.90 ref p 0.58 ref. g 5.40 6.40 h 0.60 1.20 1 gate 3 source 2 drain date code
elektronische bauelemente SSD15P10 -15a, -100v, r ds(o ) 90m" p-ch enhancement mode power mosfet 01-jun-2017 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss -100 - - v v gs =0, i d = -250a gate threshold voltage v gs(th) -1 - -2.5 v v ds =v gs , i d = -250a forward transfer conductance g fs - 11 - s v ds = -10v, i d = -4a gate-source leakage current i gss - - 100 na v gs = 20v - - -1 v ds = -80v, v gs =0, t j =25c drain-source leakage current i dss - - -25 a v ds = -80v, v gs =0, t j =125c - - 90 v gs = -10v, i d = -4.5a static drain-source on-resistance 3 r ds(on) - - 110 m6 v gs = -4.5v, i d = -4a total gate charge q g - 13.3 - v gs = -4.5v total gate charge q g - 29.2 - gate-source charge q gs - 4 - gate-drain change q gd - 8.5 - nc i d = -15a v ds = -80v v gs = -10v turn-on delay time t d(on) - 8.8 - rise time t r - 17.2 - turn-off delay time t d(off) - 86.2 - fall time t f - 63 - ns v dd = -50v i d = -1a v gs = -10v r g =66 input capacitance c iss - 1726 - output capacitance c oss - 104 - reverse transfer capacitance c rss - 71 - pf v gs =0 v ds = -25v f=1.0mhz source-drain diode diode forward voltage 1 i s - - -15 a continuous source current 2 i sm - - -60 a forward on voltage 3 v sd - - -1.2 v i s = -2a, v gs =0 reverse recovery time t rr - 28.8 - ns reverse recovery charge q rr - 40.9 - nc i f = -15a, dl/dt=100a/s t j =25c notes: 1. the date tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2. the power dissipation is limited by 150c juncti on temperature. 3. the data tested by pulsed, pulse width 300us,duty cycle 2% Q Q .
elektronische bauelemente SSD15P10 -15a, -100v, r ds(o ) 90m" p-ch enhancement mode power mosfet 01-jun-2017 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical characteristics curve
elektronische bauelemente SSD15P10 -15a, -100v, r ds(o ) 90m" p-ch enhancement mode power mosfet 01-jun-2017 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical characteristics curve
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