t u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 the rf line npn silicon rf power transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 100 to 500 mhz frequency range. ? specified 28 volt, 400 mhz characteristics ? output power = 100 watts minimum gain = 7.0 db efficiency = 50% (min) ? built-in matching network for broadband operation using double match technique ? 100% tested for load mismatch at all phase angles with 3:1 vswr ? gold metallization system for high reliability MRF329 100 w, 100 to 500 mhz controlled "q" broadband rf power transistor npn silicon maximum ratings case 333-04, style 1 rating collector-emitter voltage collector-base voltage emitter-base voltage collector current ? continuous ? peak total device dissipation @ tc = 25c (1) derate above 25c storage temperature range symbol vceo vcbo vebo ic pd tstg value 30 60 4.0 9.0 12 270 1.54 -65to+150 unit vdc vdc vdc adc watts w/c c thermal characteristics characteristic thermal resistance, junction to case (2) symbol rejc max 0.65 unit c/w electrical characteristics (tc = 25c unless otherwise noted.) characteristic symbol min typ max unit off characteristics collector-emitter breakdown voltage (lc = 80 madc, ib = 0) collector-emitter breakdown voltage (lc = 80 madc, vbe = 0) emitter-base breakdown voltage (ie = 8.0 madc, lc = 0) v(br)ceo v(br)ces v(br)ebo 30 60 4.0 ? ? ? ? ? ? vdc vdc vdc notes: (continued) 1. this device is designed for rf operation. the total device dissipation rating applies only when the device is operated as an rf amplifier. 2. thermal resistance is determined under specified rf operating conditions by infrared measurement techniques. oilrilitv
electrical characteristics ? continued (tc = 25c unless otherwise noted.) characteristic symbol min typ | max unit off characteristics (continued) collector-base breakdown voltage (lc = 80 madc, ie = 0) collector cutoff current (vcb = so vdc, ie = o) v(br)cbo !cbo 60 ? ? ? ? 5.0 vdc madc on characteristics dc current gain (lc = 4.0 adc, vce - 5.0 vdc) hfe 20 ^ 80 ? dynamic characteristics output capacitance (vcb = 28 vdc. ie = o. f = 1 .0 mhz) cob ? 95 125 pf functional tests (figure 1) common-emitter amplifier power gain (vcc = 28 vdc, pout = 100 w, f = 400 mhz) collector efficiency (vcc = 28 vdc, pout = 1 00 w, f = 400 mhz) load mismatch (vcc = 28 vdc, pout = 100 w, f = 400 mhz, vswr = 3:1 all angles) gpe 1 v 7.0 50 9.7 60 ? ? db % no degradation in output power l3 c12 c13 o- 28 vdc c14 v input/ z1 c3 ! l1 l2 ? out c4 ;cs c10 if '"" ii |
