smak plastic-encapsulate diodes hd ak 60 features i o 2a vrrm 50v-1000v high surge current capability applications rectifier : from a to m x marking polarity: color band denotes cathode glass passivated chip gn2xa 1 h igh diode semiconductor smak notes: thermal resistance from junction to ambient and from junction to lead mounted on p.c.b. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copp er pad areas gn 2aa thru gn 2ma item symbol unit test conditions gn2 repetitive peak reverse voltage v rrm v average forward current i f(av) a 60hz half-sine wave, resistance load, t l =100 2.0 surge(non-repetitive)forward current i fsm a 60hz half-sine wave ,1 cycle , ta =25 60 junction temperature t j -55~+150 storage temperature t stg -55 ~ +150 electrical characteristics (t a =25 unless otherwise specified item symbol unit test condition peak forward voltage v f v i f =2.0a 1.15 peak reverse current i rrm1 a v rm =v rrm t a =25 5 i rrm2 t a =100 50 thermal resistance(typical) r j-a /w between junction and ambient 53 1) r j-l between junction and terminal 16 1) aa ba da ga ja ka ma gn2 aa ba da ga ja ka ma 100 v rms v 35 70 140 280 420 560 700 maximum rms voltage
typical characteristics 2 h igh diode semiconductor 50 fig.1: forward current derating curve io(a) 60hz resistive or inductive load p.c.b. mounted on 0.27"0.27" (7.0mm7.0mm)copper pad areas tl( ) 0 70 90 110 130 150 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ifsm(a) number of cycles fig.2: maximum non-repetitive forward urge current tl=100 8.3ms single half sine wave 110100 0 12 24 36 48 60 if(a) fig.3: typical forward characteristics tj=25 pulse width=300us 1% duty cycle 0.01 0.1 1.0 10 20 0.5 vf(v) 0.7 0.9 1.1 1.3 0.3
3 jshd jshd h igh diode semiconductor smak smak 0.106(2.70) 0.096(2.45) 4.12 1.8
4 h igh diode semiconductor reel taping specifications for surface mount dev ices- sma
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