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this is information on a product in full production. february 2015 docid025105 rev 3 1/23 STD4N80K5, stf4n80k5, stp4n80k5, stu4n80k5 n-channel 800 v, 2.1 ? typ., 3 a mdmesh? k5 power mosfets in dpak, to-220fp, to-220 and ipak packages datasheet - production data figure 1. internal schematic diagram features ? industry?s lowest r ds(on) x area ? industry?s best figure of merit (fom) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these very high voltage n-channel power mosfets are designed using mdmesh? k5 technology based on an innovative proprietary vertical structure. the result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. to-220 to-220fp dpak 1 3 ta b 1 2 3 1 2 3 tab 3 2 1 tab ipak ' 7 $ % * 6 am01476v1 order code v ds r ds(on) max. i d p tot STD4N80K5 800 v 2.5 ? 3 a 60 w stf4n80k5 20 w stp4n80k5 60 w stu4n80k5 table 1. device summary order code marking packages packaging STD4N80K5 4n80k5 dpak tape and reel stf4n80k5 to-220fp tube stp4n80k5 to-220 stu4n80k5 ipak www.st.com
contents STD4N80K5, stf4n80k5, stp4n80k5, stu4n80k5 2/23 docid025105 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 dpak(to-252), package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 to-220fp, package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 to-220, package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.4 ipak(to-251), package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 docid025105 rev 3 3/23 STD4N80K5, stf4n80k5, stp4n80k5, stu4n80k5 electrical ratings 23 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit dpak, ipak to-220fp to-220 v ds drain-source voltage 800 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 3 3 (1) 1. limited by maximum junction temperature 3a i d drain current (continuous) at t c = 100 c 1.7 1.7 (1) 1.7 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 12 12 (1) 12 a p tot total dissipation at t c = 25 c 60 20 60 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 1a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 74.5 mj dv/dt (3) 3. i sd < 3 a, di/dt < 100 a/s, v ds(peak) v (br)dss peak diode recovery voltage slope 4.5 v/ns dv/dt (4) 4. v ds 640 v mosfet dv/dt ruggedness 50 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s, t c = 25 c) 2500 v t j operating junction temperature -55 to 150 c t stg storage temperature c table 3. thermal data symbol parameter value unit dpak, ipak to-220fp to-220 r thj-case thermal resistance junction-case max 2.08 6.25 2.08 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max 50 c/w electrical characteristics STD4N80K5, stf4n80k5, stp4n80k5, stu4n80k5 4/23 docid025105 rev 3 2 electrical characteristics (tcase =25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 800 v i dss zero gate voltage drain current (v gs = 0) v ds = 800 v 1 a v ds = 800 v, t c =125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 1.5 a 2.1 2.5 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 175 - pf c oss output capacitance - 18 - pf c rss reverse transfer capacitance -0.5-pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 640 v, v gs = 0 - 26 - pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related v ds = 0 to 640 v, v gs = 0 - 11 - pf r g gate input resistance f=1 mhz, i d = 0 - 15 - ? q g total gate charge v dd = 640 v, i d = 3 a, v gs = 10 v (see figure 19) -10.5-nc q gs gate-source charge - 2 - nc q gd gate-drain charge - 7.5 - nc docid025105 rev 3 5/23 STD4N80K5, stf4n80k5, stp4n80k5, stu4n80k5 electrical characteristics 23 the built-in back-to-back zener diodes have been specifically designed to enhance the esd capability of the device. the zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. these integrated zener diodes thus eliminate the need for external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 400 v, i d = 1.5 a, r g = 4.7 ? , v gs = 10 v (see figure 18) - 16.5 - ns t r rise time - 15 - ns t d(off) turn-off-delay time - 36 - ns t f fall time - 21 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 3 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) 12 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 3 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 3 a, di/dt = 100 a/s v dd = 60 v (see figure 20) -242 ns q rr reverse recovery charge - 1.42 c i rrm reverse recovery current - 12 a t rr reverse recovery time i sd = 3 a, di/dt = 100 a/s v dd = 60 v t j = 150 c (see figure 20) -373 ns q rr reverse recovery charge - 1.98 c i rrm reverse recovery current - 10.5 a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1 ma, i d =0 30 - v electrical characteristics STD4N80K5, stf4n80k5, stp4n80k5, stu4n80k5 6/23 docid025105 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak and ipak figure 3. thermal impedance for dpak and ipak i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 0.01 am15986v1 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 0.01 am15987v1 figure 6. safe operating area for to-220 figure 7. thermal impedance for to-220 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 0.01 am15988v1 docid025105 rev 3 7/23 STD4N80K5, stf4n80k5, stp4n80k5, stu4n80k5 electrical characteristics 23 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. normalized gate threshold voltage vs temperature i d 4 2 0 0 8 v ds (v) 16 (a) 4 12 6v 7v v gs =10, 11 v 5 3 1 8v 9v am15989v1 i d 4 2 0 5 7 v gs (v) 9 (a) 6 8 1 3 5 v ds =20v 10 am15990v1 v gs 6 4 2 0 0 2 q g (nc) (v) 8 8 4 6 10 v dd =640v i d =3a 300 200 100 0 400 v ds (v) 500 v ds 12 10 600 am15991v1 5 ' 6 r q , ' $ 9 * 6 9 * , 3 ' 5 9 i 0 + ] & 9 ' 6 9 s ) & |