we ight: 0.01 grams (approx.) u nit c haracteristic symbol ca se: sod-123, molded plastic surge overload rating to 20a peak classification rating 94v-o guard ring die construction for use in low voltage application ideally suited for automatic assembly ds22w ? DS220W 2.0 a su rface mount schottky barrier diode feat ures ! schottk y barrier chip ! ! low power loss, high efficiency ! ! ! ! plastic case material has ul flammability m echanical d ata ! ! terminals: solder plated, solderable per mil-std-750, method 2026 ! polarity: cathode band or cathode notch ! marking: type number ! ! lead free: for rohs / lead free version m aximum ra tings and electrical characteristics @t a =2 5c unless otherwise specified note: 1. mounted on p.c. board with 5.0mm 2 c opper pad area. 1 of 2 1. 0 0. 2 2. 8 0. 1 1. 9 0. 1 c athode band top view 3. 7 0. 2 0. 6 0. 25 1. 4 0 .15 0.10-0.30 sod - 123fl dimensions in millimeters z ibo seno electronic engineering co., ltd. www.senocn.com ds22w ? DS220W ty pical junction capacitance 0.55 0.70 0.85 0.95 v 2.0 a 14 21 28 35 42 56 70 105 140 v 20 30 40 50 60 80 100 150 200 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rw m v r rms revers e voltage v r( rms) a verage rectified output current @t l = 75c i o non-repeti tive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fs m 40 a forward voltage @i f = 2.0a v fm p eak reverse current @t a = 25c at rated dc blocking voltage @t a = 100c i rm 0. 5 10 ma r jl r ja 28 110 c /w operat i ng temperature range t j -65 t o +125 c s t orage temperature range t st g -65 t o +150 c ty pical thermal resistance (note 1) j c 220 80 pf 0. 3 5 a l l d a t a s h e e t ds22w ds23w ds24w ds25w ds26w ds28w ds210w ds215w DS220W
2.0 0.01 0.1 1.0 10 0 0.4 0.8 1.2 i , inst antaneous forward current (a) f v , inst antaneous fwd voltage (v) fig. 2 typ. forward characteristics f t - 25oc j i pu lse width = 300 s f m 10 100 1000 0.1 1 10 100 c , junction cap acitance (pf) j v , reverse vol tage (v) fig. 4 typical junction capacitance r t = 25c f = 1 mhz j 0 20 40 60 80 100 120 140 i , instantaneous reverse current (ma) r percent of ra ted peak reverse voltage (%) fi g . 5 t ypical reverse characteristics t = 100oc j t = 75oc j t = 25oc j 100 10 1.0 0.1 0.01 0.001 1.0 25 50 75 100 125 150 i a verage for ward current (a) (av), t, lead temperature (oc) fig. 1 forward current derating curve l 2 of 2 0 10 20 30 40 50 1 10 100 i , peak forward surge current (a) fsm number of cycles a t 60 hz fig. 3 max non-repetitive peak fwd surge current single half-sine-wave (jedec method) t = 100 c j 22 - 24 25 - 26 28 - 220 z ibo seno electronic engineering co., ltd. www.senocn.com ds22w ? DS220W ds22w ? DS220W 0 a l l d a t a s h e e t
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