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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3421 description high collector-emitter breakdown voltage : v (br)ceo = 120v(min) complement to type 2sa1358 applications designed for audio frequency power amplifier applications. suitable for driver of 60 to 80 watts audio amplifier. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 5 v i c collector current-continuous 1 a i b b base current-continuous 0.1 a collector power dissipation @ t c =25 10 p c collector power dissipation @ t a =25 1.5 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3421 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma ; i b = 0 120 v v (br)ebo emitter-base breakdown voltage i e = 1ma ; i c = 0 5 v v ce( sat ) collector-emitter saturation voltage i c = 500ma; i b = 50ma 1.0 v v be( on ) base-emitter on voltage i c = 500ma ; v ce = 5v 1.0 v i cbo collector cutoff current v cb = 120v; i e = 0 0.1 a i ebo emitter cutoff current v eb = 5v; i c = 0 0.1 a h fe dc current gain i c = 0.1a ; v ce = 5v 80 240 f t current-gain?bandwidth product i c = 0.1a ; v ce = 5v 120 mhz c ob output capacitance i e = 0; v cb = 10v, f test = 1mhz 15 pf ? h fe classifications o y 80-160 120-240 isc website www.iscsemi.cn 2 |
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