bpw34, bpw34s www.vishay.com vishay semiconductors rev. 2.1, 23-aug-11 1 document number: 81521 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon pin photodiode description bpw34 is a pin photodiode with high speed and high radiant sensitivity in miniature, flat, to p view, clear plastic package. it is sensitive to visible and near infrared radiation. bpw34s is packed in tubes, specifications like bpw34. features ? package type: leaded ? package form: top view ? dimensions (l x w x h in mm): 5.4 x 4.3 x 3.2 ? radiant sensitive area (in mm 2 ): 7.5 ? high photo sensitivity ? high radiant sensitivity ? suitable for visible and near infrared radiation ? fast response times ? angle of half sensitivity: ? = 65 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec note ** please see document vishay material category policy: www.vishay.com/doc?99902 applications ? high speed photo detector note ? test condition see table basic characteristics note ? moq: minimum order quantity 94 8583 product summary component i ra (a) ? (deg) 0.1 (nm) bpw34 50 65 430 to 1100 bpw34s 50 65 430 to 1100 ordering information ordering code packaging remarks package form bpw34 bulk moq: 3000 pcs, 3000 pcs/bulk top view bpw34s tube moq: 1800 pcs, 45 pcs/tube top view absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 60 v power dissipation t amb 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 3 s t sd 260 c thermal resistance junction/ambient connected with cu wire, 0.14 mm 2 r thja 350 k/w
bpw34, bpw34s www.vishay.com vishay semiconductors rev. 2.1, 23-aug-11 2 document number: 81521 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light cu rrent vs. ambient temperature basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 10 v, e = 0 i ro 230na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 70 pf v r = 3 v, f = 1 mhz, e = 0 c d 25 40 pf open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 350 mv temperature coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo - 2.6 mv/k short circuit current e a = 1 klx i k 70 a e e = 1 mw/cm 2 , = 950 nm i k 47 a temperature coefficient of i k e e = 1 mw/cm 2 , = 950 nm tk ik 0.1 %/k reverse light current e a = 1 klx, v r = 5 v i ra 75 a e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 40 50 a angle of half sensitivity ? 65 deg wavelength of peak sensitivity p 900 nm range of spectral bandwidth 0.1 430 to 1100 nm noise equivalent power v r = 10 v, = 950 nm nep 4 x 10 -14 w/ hz rise time v r = 10 v, r l = 1 k , = 820 nm t r 100 ns fall time v r = 10 v, r l = 1 k , = 820 nm t f 100 ns 20 40 60 80 1 10 100 1000 100 94 8403 v r = 10 v t am b - am b ient temperat u re (c) i ro - re v erse dark c u rrent (na) 0.6 0.8 1.0 1.2 1.4 i ra, rel - relati v e re v erse light c u rrent t am b - am b ient temperat u re (c) 94 8416 v r = 5 v = 950 nm 0 100 80 60 40 20
bpw34, bpw34s www.vishay.com vishay semiconductors rev. 2.1, 23-aug-11 3 document number: 81521 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - reverse light current vs. irradiance fig. 4 - reverse light current vs. illuminance fig. 5 - reverse light current vs. reverse voltage fig. 6 - diode capacitance vs. reverse voltage fig. 7 - relative spectral sensitivity vs. wavelength fig. 8 - relative radiant sensitivity vs. angular displacement 0.01 0.1 1 0.1 1 10 100 1000 10 94 8417 v r = 5 v = 950 nm e e - irradiance (m w /cm 2 ) i ra - re v erse light c u rrent (a) 0.1 1 10 100 1000 94 8418 10 1 10 2 10 3 10 4 v r =5v e a - ill u minance (lx) i - re v erse light c u rrent (a) ra 0.1 1 10 1 10 100 100 94 8419 1 m w /cm 2 0.5 m w /cm 2 0.2 m w /cm 2 0.1 m w /cm 2 0.05 m w /cm 2 = 950 nm v r - re v erse voltage (v) i ra - re v erse light c u rrent (a) 0 20 40 60 80 948407 e = 0 f = 1 mhz c d - diode capacitance (pf) v r - re v erse voltage (v) 0.1 100 110 350 550 750 950 0 0.2 0.4 0.6 0.8 1.0 1150 94 8420 - w a v elength (nm) s( ) rel - relati v e spectral sensiti v it y 0.4 0.2 0 s rel - relati v e radiant sensiti v ity 94 8406 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - ang u lar displacement
bpw34, bpw34s www.vishay.com vishay semiconductors rev. 2.1, 23-aug-11 4 document number: 81521 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters tube packaging dimensions in millimeters fig. 9 - drawing proportions not scaled 96 12186 18800 stopper 10.7 9.5 214.5 q u antity per t ub e: 45 pcs q u antity per b ox: 1800 pcs
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