VS-HFA240NJ40CPBF www.vishay.com vishay semiconductors revision: 29-oct-16 1 document number: 94063 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 240 a features ? very low q rr and t rr ? ul approved file e222165 ? designed and qualified for industrial level ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 benefits ? reduced rfi and emi ? reduced snubbing description hexfred ? diodes are optimized to reduce losses and emi/rfi in high frequency po wer conditioning systems. an extensive characterization of the recovery behavior for different values of cu rrent, tempera ture and di f /dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. product summary if (av) 240 a v r 400 v i f(dc) at t c 197 a at 100 c package to-244 circuit two diodes common cathode ba s e common cathode lug terminal anode 1 lug terminal anode 2 to-244 absolute maximum ratings parameter symbol test conditions max. units cathode to anode voltage v r 400 v continuous forward current i f t c = 25 c 395 a t c = 100 c 197 single pulse forward current i fsm limited by junction temperature 900 non-repetitive avalanche energy e as l = 100 h, duty cycle limited by maximum t j 1.4 mj maximum power dissipation p d t c = 25 c 658 w t c = 100 c 263 operating junction and storage ? temperature range t j , t stg -55 to +150 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units cathode to anode ? breakdown voltage v br i r = 100 a 400 - - v maximum forward voltage v fm i f = 120 a see fig. 1 - 1.1 1.47 i f = 240 a - 1.3 1.5 i f = 120 a, t j = 125 c - 1.0 1.2 maximum reverse ? leakage current i rm t j = 125 c, v r = 400 v see fig. 2 - 660 5000 a junction capacitance c t v r = 200 v see fig. 3 - 280 380 pf series inductance l s from top of terminal hole to mounting plane - 6.0 - nh
VS-HFA240NJ40CPBF www.vishay.com vishay semiconductors revision: 29-oct-16 2 document number: 94063 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) mounting surface must be smooth, flat, free of burrs or other prot rusions. apply a thin even film or thermal grease to mounting surface. gradually tighten each mounting bolt in 5 to 10 lbf ?? in steps until desired or maxi mum torque limits are reached. ? ? fig. 1 - maximum forward voltage drop vs. instantaneous forward current (per leg) fig. 2 - typical reverse current vs. reverse voltage (per leg) dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time ? see fig. 5 t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 50 - ns t j = 25 c i f = 140 a ? di f /dt = 200 a/s ? v r = 200 v - 77 120 t j = 125 c - 290 440 peak recovery current ? see fig. 6 i rrm t j = 25 c - 7.5 14 a t j = 125 c - 16 30 reverse recovery charge ? see fig. 7 q rr t j = 25 c - 290 780 nc t j = 125 c - 2300 6300 peak rate of recovery current ? see fig. 8 di (rec)m /dt t j = 25 c - 320 - a/s t j = 125 c - 270 - thermal - mechanical specifications parameter symbol min. typ. max. units maximum junction and storage temperature range t j , t stg - 55 - 150 c thermal resistance, junction to case per leg r thjc - - 0.19 c/w per module - - 0.095 typical thermal resistance, case to heatsink r thcs -0.10- weight -68- g -2.4-oz. mounting torque (1) 30 (3.4) - 40 (4.6) lbf in (n m) center hole 12 (1.4) - 18 (2.1) terminal torque 30 (3.4) - 40 (4.6) vertical pull --80 lbf ?? in 2" lever pull --35 1 10 t j = 150 c t j = 125 c t j = 25 c 0.2 2.0 1.0 1.4 v fm - forward voltage drop (v) i f - instantaneous forward current (a) 100 0.6 1.6 1.8 1000 0.4 0.8 1.2 100 0.1 1 10 100 v r - reverse voltage (v) i r - reverse current (a) 200 400 300 1000 t j = 150 c t j = 125 c t j = 25 c 10 000
VS-HFA240NJ40CPBF www.vishay.com vishay semiconductors revision: 29-oct-16 3 document number: 94063 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction capacitance vs. reverse voltage (per leg) fig. 4 - maximum allowable case temperature vs. dc forward current (per leg) fig. 5 - typical reverse recovery time vs. di f /dt (per leg) fig. 6 - typical recovery current vs. di f /dt (per leg) fig. 7 - typical stored charge vs. di f /dt (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt (per leg) 1000 10 000 1 10 100 1000 100 v r - reverse voltage (v) c t - junction capacitance (pf) t j = 25 c 80 160 0 100 300 500 0 i f(av) - dc forward current (a) maximum allowable case temperature (c) dc 140 120 100 60 40 20 200 400 250 0 100 1000 di f /dt (a/s) t rr (ns) 50 t j = 125 c t j = 25 c 350 150 100 i f = 200 a i f = 120 a i f = 50 a 200 300 400 450 70 60 0 100 1000 di f /dt (a/s) i rrm (a) 40 i f = 200 a i f = 120 a i f = 50 a t j = 125 c t j = 25 c 20 50 30 10 6000 4000 100 1000 di f /dt (a/s) q rr (nc) t j = 125 c t j = 25 c 2000 1000 3000 0 5000 i f = 200 a i f = 120 a i f = 50 a 1000 100 100 1000 di f /dt (a/s) di (rec)m /dt (a/s) t j = 125 c t j = 25 c 200 a 120 a 50 a 10 000
VS-HFA240NJ40CPBF www.vishay.com vishay semiconductors revision: 29-oct-16 4 document number: 94063 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - maximum thermal impedance z thjc characteristics (per leg) fig. 10 - - reverse recovery parameter test circuit fig. 11 - reverse recovery waveform and definitions 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal response single pulse (thermal response) 0.001 10 d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-HFA240NJ40CPBF www.vishay.com vishay semiconductors revision: 29-oct-16 5 document number: 94063 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12 - avalanche test circuit and waveforms ordering information table v (aval) v r(rated) i l(pk) decay time current monitor high-speed switch d.u.t. r g = 25 + freewheel diode v d = 50 v l = 100 h links to related documents dimensions www.vishay.com/doc?95021 - hexfred ? family, electron irradiated - average current rating - nj = to-244 - voltage rating (400 v) - c = common cathode - lead (pb)-free device code hfa 240 nj 40 c pbf 1 2 3 4 5 6 7 6 2 1 4 3 5 7 vs- - vishay semiconductors product
outline dimensions www.vishay.com vishay semiconductors revision: 24-apr-15 1 document number: 95021 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-244 dimensions in millimeters (inches) 3 2 3 1 ? 5.2 (? 0.20) 9.6 (0.37) min. 93 (3.66) max. ?" - 20 unc 80 (3.15) 40 (1.57) 13 (0.51) 35 (1.37) ref. 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 21 (0.82) 20 (0.78) ? 7.2 (? 0.28) (2 places) 12.6 (0.5)
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