VS-HFA140NJ60CPBF www.vishay.com vishay semiconductors revision: 28-oct-16 1 document number: 94051 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 167 a features ? very low q rr and t rr ? ul approved file e222165 ? designed and qualified for industrial level ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 benefits ? reduced rfi and emi ? reduced snubbing description hexfred ? diodes are optimized to reduce losses and emi/rfi in high frequency po wer conditioning systems. an extensive characterization of the recovery behavior for different values of cu rrent, tempera ture and di f /dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. product summary i f (maximum) 167 a v r 600 v i f(dc) at t c 84 a at 100 c package to-244 circuit two diodes common cathode base common cathode lug terminal anode 1 lug terminal anode 2 to-244 absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 600 v continuous forward current i f t c = 25 c 167 a t c = 100 c 84 single pulse forward current i fsm limited by juncti on temperature 400 non-repetitive avalanche energy e as l = 100 h, duty cycle limited by maximum t j 330 j maximum power dissipation p d t c = 25 c 310 w t c = 100 c 132 operating junction and storage ? temperature range t j , t stg -55 to +150 c electrical specifications per leg (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units cathode to anode ? breakdown voltage v br i r = 100 a 600 - - v maximum forward voltage v fm i f = 70 a see fig. 1 -1.371.89 i f = 140 a - 1.58 2.1 i f = 70 a, t j = 125 c - 1.29 1.54 maximum reverse leakage current i rm t j = 125 c, v r = 480 v see fig. 2 - 1.2 4 ma junction capacitance c t v r = 200 v see fig. 3 - 140 250 pf series inductance l s from top of terminal hole to mounting plane - 7.0 - nh
VS-HFA140NJ60CPBF www.vishay.com vishay semiconductors revision: 28-oct-16 2 document number: 94051 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) mounting surface must be smooth, flat, free or burrs or other prot rusions. apply a thin even film or thermal grease to mounting surface. ? gradually tighten each mounting bolt in 5 - 10 lbf ?? in steps until desired or maximum torque limits are reached fig. 1 - maximum forward voltage drop vs. instantaneous forward current (per leg) fig. 2 - typical reverse current vs. reverse voltage (per leg) dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time (fig. 5) t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 33 - ns t j = 25 c i f = 70 a ? di f /dt = 200 a/s ? v r = 200 v - 80 120 t j = 125 c - 140 220 peak recovery current (fig. 6) i rrm t j = 25 c - 8.5 15 a t j = 125 c - 14 25 reverse recovery charge (fig. 7) q rr t j = 25 c - 340 900 nc t j = 125 c - 980 2300 peak rate of recovery current (fig. 8) di (rec)m /dt t j = 25 c - 300 - a/s t j = 125 c - 220 - thermal - mechanical specifications parameter symbol min. typ. max. units maximum junction and storage temperature range - 55 - 150 c thermal resistance, junction to case per leg t j , t stg -0.38 c/w k/w per module r thjc -0.19 typical thermal resistance, case to heatsink r thcs 0.10 - weight - 68 - g -2.4-oz. mounting torque (1) 30 (3.4) - 40 (4.6) lbf in (n m) mounting torque center hole 12 (1.4) - 18 (2.1) terminal torque 30 (3.4) - 40 (4.6) vertical pull --80 lbf in 2" lever pull --35 v fm - forwar d voltage drop (v) i f - instantaneous forwar d current (a) 0.2 0.7 1.2 1.7 2.2 2.7 3.2 3.7 1 10 100 1000 t j = 25 c t j = 125 c t j = 150 c 100 200 300 400 500 600 0.1 1 10 100 1000 10 000 25 c 125 c 150 c v r - reverse voltage (v) i r - reverse current (a)
VS-HFA140NJ60CPBF www.vishay.com vishay semiconductors revision: 28-oct-16 3 document number: 94051 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction capacitance vs. reverse voltage (per leg) fig. 4 - maximum allowable case temperature vs. dc forward current (per leg) fig. 5 - typical reverse recovery time vs. di f /dt (per leg) fig. 6 - typical recovery current vs. di f /dt (per leg) fig. 7 - typical stored charge vs. di f /dt (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt (per leg) v r - reverse voltage (v) c t - junction capacitance (pf) 1 10 100 1000 10 100 1000 10 000 i f(dc) - dc forwar d current (a) maximum allowa b le case temperature (c) 0 30 60 90 120 150 180 0 20 40 60 80 100 120 140 160 dc t rr (ns) d i f d t (a/s) 100 1000 0 50 100 150 200 250 140 a, 125c 30 a, 25c 70 a, 25c 140 a, 25c 70 a, 125c 30 a, 125c i rrm (a) d i f d t (a/s) 100 1000 0 10 20 30 40 50 60 140 a, 125c 30 a, 25c 70 a, 25c 70 a, 125c 30 a, 125c 140 a, 25c q rr (nc) d i f d t (a/s) 100 1000 0 500 1000 1500 2000 2500 3000 3500 140 a, 125c 30 a, 25c 70 a, 25c 140 a, 25c 70 a, 125c 30 a, 125c d i (rec) m/ d t (a/s) d i f d t (a/s) 100 1000 100 1000 10 000 140 a, 125c 30 a, 25c 70 a, 25c 140 a, 25c 70 a, 125c 30 a, 125c
VS-HFA140NJ60CPBF www.vishay.com vishay semiconductors revision: 28-oct-16 4 document number: 94051 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - maximum thermal impedance z thjc characteristics fig. 10 - reverse recovery parameter test circuit fig. 11 - reverse recovery waveform and definitions t 1 - rectangular pulse duration (s) z thjc - thermal response 1e-005 0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 0.33 0.25 d = 0.50 0.08 0.17 s in g le pul s e ( thermal re s pon s e ) irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-HFA140NJ60CPBF www.vishay.com vishay semiconductors revision: 28-oct-16 5 document number: 94051 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12 - avalanche test circuit and waveforms ordering information table v (aval) v r(rated) i l(pk) decay time current monitor high-speed switch d.u.t. r g = 25 + freewheel diode v d = 50 v l = 100 h links to related documents dimensions www.vishay.com/doc?95021 1 - hexfred ? family 2 - average current rating 3 - nj = to-244 4 - voltage rating (600 v) 5 - c = common cathode 6 7 - lead (pb)-free device code 6 2 1 4 3 5 7 hfa vs- 140 nj 60 c pbf - vishay semiconductors product
outline dimensions www.vishay.com vishay semiconductors revision: 24-apr-15 1 document number: 95021 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-244 dimensions in millimeters (inches) 3 2 3 1 ? 5.2 (? 0.20) 9.6 (0.37) min. 93 (3.66) max. ?" - 20 unc 80 (3.15) 40 (1.57) 13 (0.51) 35 (1.37) ref. 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 21 (0.82) 20 (0.78) ? 7.2 (? 0.28) (2 places) 12.6 (0.5)
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