vishay siliconix SI7342DP document number: 72751 s11-0212-rev. d, 14-feb-11 www.vishay.com 1 n-channel 30 v (d-s) fast switching mosfet features ? halogen-free according to iec 61249-2-21 definition ? extremely low q gd for low switching losses ? trenchfet ? power mosfet ? new low thermal resistance powerpak ? package with low 1.07 mm profile ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? high-side dc/dc conversion - notebook - server product summary v ds (v) r ds(on) ( ? )i d (a) 30 0.00825 at v gs = 10 v 15 0.00975 at v gs = 4.5 v 13 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom view ordering information: SI7342DP-t1-e3 (lead (pb)-free) SI7342DP-t1-ge3 (lead (pb)-free and halogen-free) n-channel mosfet g d s notes: a. surface mounted on 1? x 1? fr4 board. b. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak so-8 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulatio n process in manufacturing. a solder fill et at the exposed copper tip cannot be guara nteed and is not required to ensure adequate botto m side solder interconnection. c. rework conditions: manual solderi ng with a soldering iron is not recommended for leadless components. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol 10 s steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) a t a = 25 c i d 15 9 a t a = 70 c 12 7 pulsed drain current i dm 60 continuous source current (diode conduction) a i s 4.1 1.5 maximum power dissipation a t a = 25 c p d 51.8 w t a = 70 c 3.2 1.1 operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) b, c 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient (mosfet) a t ? 10 s r thja 20 25 c/w steady state 53 70 maximum junction-to-case (drain) steady state r thjc 2.1 3.2
www.vishay.com 2 document number: 72751 s11-0212-rev. d, 14-feb-11 vishay siliconix SI7342DP notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics (25 c, unless otherwise noted) mosfets specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 1.8 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 70 c 10 on-state drain current a i d(on) v ds ?? 5 v, v gs = 10 v 40 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 15 a 0.0066 0.00825 ? v gs = 4.5 v, i d = 13 a 0.0077 0.00975 forward transconductance a g fs v ds = 15 v, i d = 15 a 65 s diode forward voltage a v sd i s = 2.9 a, v gs = 0 v 0.73 1.1 v dynamic b input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz 1900 pf output capacitance c oss 530 reverse transfer capacitance c rss 120 total gate charge q g v ds = 15 v, v gs = 4.5 v, i d = 15 a 12.5 19 nc gate-source charge q gs 3.9 gate-drain charge q gd 2.1 gate resistance r g 0.8 1.2 1.8 ? tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 15 ? i d ? 1 a, v gen = 10 v, r g = 6 ? 13 20 ns rise time t r 813 turn-off delay time t d(off) 48 75 fall time t f 13 20 source-drain reverse recovery time t rr i f = 2.9 a, di/dt = 100 a/s 36 55 output characteristics 0 10 20 30 40 50 60 012345 v gs = 10 v thru 3 v v ds - drain-to-source voltage (v) - drain current (a) i d 2 v transfer characteristics 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t c = 125 c - 55 c 25 c v gs - gate-to-source voltage (v) - drain current (a) i d
document number: 72751 s11-0212-rev. d, 14-feb-11 www.vishay.com 3 vishay siliconix SI7342DP typical characteristics (25 c, unless otherwise noted) on-resistance vs. drain current gate charge source-drain diode forward voltage - on-resistance ( ? ) r ds(on) 0.000 0.003 0.006 0.009 0.012 0.015 0 1020304050 i d - drain current (a) v gs = 10 v v gs = 4.5 v 0 1 2 3 4 5 6 0369121518 v ds = 15 v i d = 15 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 25 c 60 10 0.1 v sd - source-to-drain voltage (v) - source current (a) i s 1 t j = 150 c capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 440 880 1320 1760 2200 0 6 12 18 24 30 v ds - drain-to-source voltage (v) c rss c oss c iss c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 2 5 5 0 7 5 100 125 150 v gs = 10 v i d = 15 a t j - junction temperature (c) r ds ( on) - on-resistance (normalized) 0.000 0.008 0.016 0.024 0.032 0.040 0246810 i d = 15 a - on-resistance ( ? ) r ds(on) v gs - gate-to-source voltage (v)
www.vishay.com 4 document number: 72751 s11-0212-rev. d, 14-feb-11 vishay siliconix SI7342DP typical characteristics (25 c, unless otherwise noted) threshold voltage - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - temperature (c) single pulse power 0 60 100 20 40 power (w) time (s) 1 600 10 80 0.1 0.01 100 safe operating area, junction-to-case 100 1 0.1 1 10 100 0.01 10 100 ms - drain current (a) i d 0.1 limited by r ds(on)* t c = 25 c single pulse 1 s 10 s dc 10 ms v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified normalized thermal transient im pedance, junction-to-ambient 10 - 3 10 - 2 1 10 600 10 - 1 10 - 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 125 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
document number: 72751 s11-0212-rev. d, 14-feb-11 www.vishay.com 5 vishay siliconix SI7342DP typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72751 . normalized thermal transient impedance, junction-to-case 10 - 3 10 - 2 1 10 - 1 10 - 4 2 1 0.1 0.01 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 0.05 single pulse 0.02
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