i nchange semiconductor isc product specification isc website 1 isc & iscsemi is registered trademark isc silicon pnp darlington power transistor 2sb 88 3 description high dc c urrent g ain - : h fe = 2 000(min)@ i c = - 7 a wide area of safe operation low c ollector - emitter s aturation v oltage - : v ce (sat ) = - 1.5 v(max)@ i c = - 7 a complement to ty pe 2sd119 3 applications d esigned for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. a bsolute maximum ratings (t a =25 symbol parameter value unit v cbo collector - b ase v oltage - 7 0 v v ceo collector - e mitter v oltage - 6 0 v v ebo emitter - b ase v oltage - 6 v i c collector c urrent - continuous - 1 5 a i cm collector c urrent - p eak - 20 a p c collector p ower d issipat i on t c =25 70 w t j junction t emperature 150 t stg storage t emperature range - 5 5 ~ 150
i nchange semiconductor isc product specification isc website 2 isc & iscsemi is registered trademark isc silicon pnp darlington power transistor 2sb 88 3 electrical characteristics t c =25 v ( br ) ce o collector - e mitter breakdown v oltage i c = - 50m a , r b e = - 6 0 v v ( br )cbo collector - b ase breakdown v oltage i c = - 5 m a , i e = 0 - 70 v v c e ( sat ) collector - e mitter s aturation v oltage i c = - 7 a , i b = - 1 4 m a - 1.5 v v be ( sat ) b ase - e mitter s aturation v oltage i c = - 7 a , i b = - 14m a - 2.0 v i cbo collector c utoff c urrent v cb = - 4 0v , i e = 0 - 1 0 0 a i ebo emitter c utoff c urrent v eb = - 5 v; i c = 0 - 3 ma h fe dc c urrent g ain i c = - 7 a; v ce = - 2 v 2000 f t current - gain bandwidth product i c = - 7 a; v ce = - 5 v 20 mhz
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