HE387E/hem38 7e/hes387e l e l e c t r i c a l ( 5 0 , - 5 5 + 8 5 v = + 5v, t = ) cc a f f l h 20 30 0 gp db 24 . 0 25. 0 gp db 0 . 5 f n db 1. 5 1 . 0 vswr i - - 2.0:1 vswr o - - 2.0:1 p -1 dbm 1 1.0* 12.0 i cc ma -- 18 20 35 0 0 . 3 1.5 : 1 1.4 : 1 20 24 26 gain(db) 1.2 1.4 1.6 vswr fn(db) vswri vswro p -1 (dbm) 28 150 300 frequency(mhz) 250 200 100 0.8 1.2 12 14 20 150 300 frequency(mhz) 250 200 100 20 150 300 frequency(mhz) 250 200 100 20 150 300 frequency(mhz) 250 200 100 t a=+25 t a=+85 t a=-55 1.0 1.4 t a=+25 t a=+85 t a=-55 13 1 1 25 27 1.3 1.5 oip 3 (dbm) 15 23 24 25 26 27 t o-8c 1 2 3 4 smo-8c 1 3 2 4 lot number hem387e +15v c2 c1 out in sm64c 2 lot number hes387e 1 3 5 6 4 in out v cc in in out out v cc v cc v cc p-1 oip3 shell t ypical cur v es vswr noise figure gain f ea tur es frequency range: 20 300mhz p a r a m e t e r s y m b o l u n i t typical guar a nteed f r e q u e n c y r a n g e g a i n n o i s e f i g u r e i n p u t v s w r o u t p u t v s w r f o r 1 d b c o m p r e s s i o n s u p p l y c u r r e n t g a i n f latness mh z note: * f =200 m hz. t a =24 1 . power supply: +7v dc rf i nput: + 7dbm storage t emp: +125 maxim um r a tings a pplica tion notes 1.interface schematic shown as right, c 3.3 22 f , c 3300 6800pf . 1 2 2.connectorized package (sma-1) available. 3.see assembly section for outline and mounting information. bowei integra ted circuits co.,l td. power output l l high gain: 25db(t yp) low noise: 1.0db(t yp) l l l active bias design supply t emperature compensation operating t emperature range: -55 +85 standard hermetic package 41 broadband amplifier tel:+86-31 1-87091891 87091887 f ax:+86-31 1-87091282 http://www .cn-bowei.com e-mail:cjian @cn-bowei.com
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