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cystech electronics corp. spec. no. : c 704j4 issued date : 20 16 . 06 . 02 revised date : 2016.06.03 page no. : 1 / 13 MTB5D0C03J4 cyste k product specification n & p - channel enhancement mode power mosfet MTB5D0C03J4 features ? low gate charge ? simple drive requirement ? rohs compliant & halogen - free package equivalent circuit outline absolute maximum ratings (t a =25 ? c , unless otherwise noted ) parameter symbol limits unit n - channel p - channel drain - sour c e voltage v ds 30 - 30 v gate - source voltage v gs 20 20 continuous drain current @ t c =25 ? c , v gs =10v( - 10v) (note1) i d 33.5 - 26.5 a continuous drain current @ t c =100 ? c , v gs =10v( - 10v) (note1) 21.2 - 16.8 continuous drain current @ t a =25 ? c , v gs =10v( - 10v) (note4) 8.6 - 6.8 continuous drain current @ t a =70 ? c , v gs =10v( - 10v) (note4) 6.9 - 5.4 pulsed drain current *1 (note3) i dm 134 - 106 single pulse avalanche current @ l=0.1mh i as 33.5 - 26.5 single pulse avalanche energy @l=1mh ( note5) e as 128 128 mj total power dissipation (t c =25 ) (note1) p d 25 w total power dissipation (t c = 100 ) (note1) 10 total power dissipation (t a =25 ) (note2) p dsm 2.4 total power dissipation (t a = 70 ) (note2) 1.7 operating junction and storage temperature range tj, tstg - 55~+1 50 ? c MTB5D0C03J4 to - 252 - 4l g gate d drain s source n - ch p - ch bv dss 30v - 30v i d @ v gs =10v( - 10v), t a =25 c 8.6a - 6.8a i d @ v gs =10v( - 10v), t c =25 c 33.5a - 26.5a r dson (typ.) @v gs =( - )10v 6.7 m 13.4 m r dson (typ.) @v gs =( - )4.5v 8.3 m 20.1 m s1 g1 s2 g2 tab d1/d2
cystech electronics corp. spec. no. : c 704j4 issued date : 20 16 . 06 . 02 revised date : 2016.06.03 page no. : 2 / 13 MTB5D0C03J4 cyste k product specification thermal data parameter symbol val ue unit thermal resistance, junction - to - case, max r th,j - c 6 ? c /w thermal resistance, junction - to - ambient, max (note2) r th,j - a 62.5 thermal resistance, junction - to - ambient, max (note4) 90 note : 1 . the power dissipation p d is based on t j(max) =150 c, using junction - to - case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 . the value of r ja is measured with the device mounted on 1 in 2 fr - 4 board with 2 oz. copper, in a still air environment with t a =25 c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user s specific board design. 3 . repetitive rating, pulse width limited by junction temperature t j(max) =150 c. ratings are based on low frequency and low duty cycles to keep initial t j =25 c. 4. when mounted on the minimum pad size recommended (pcb mount), t 10s. 5. l=1mh, i as = 16a, v gs = 10v, v dd = 15v. 100% tested by l=0.1mh, i as = 10a, v gs = 10v, v dd = 15v. n - ch characteristics (t c =25 ? symbol min. typ. max. unit test conditions static bv dss 3 0 - - v v gs =0v, i d = 25 0 a ? bv dss / ? tj - 0.02 - v/ ? c reference to 25 ? c , i d =250 a v gs(th) 1 .0 - 2.5 v v ds =v gs , i d = 25 0 a i gss - - 100 na v gs = 20 v , v ds =0v i dss - - 1 a v ds =30v, v gs =0v - - 10 v ds =24v, v gs =0v, tj=55 ? c r ds ( on ) *1 - 6.7 9.7 m v gs =10v, i d = 10 a - 8.3 12 v gs =4.5v, i d = 7 a g fs *1 - 14.9 - s v ds = 10 v , i d =7a dynamic qg *1 - 34.3 - nc v ds =24v, i d =8a, v gs =10v qgs *1 - 4.4 - qgd *1 - 8.8 - t d(on) *1 - 7 - ns v ds =15v, i d =1a, v gs =10v, r g =2.7 tr *1 - 13.4 - t d(off) *1 - 53 - t f *1 - 11.6 - ciss - 1385 - pf v ds =25v, v gs =0v, f=1mhz co ss - 216 - crss - 143 - source - drain diode i s *1 - - 33.5 a i sm *2 - - 134 v sd *1 - 0.82 1. 2 v i s =10a, v gs =0v trr * - 13.9 - ns i f =8a, di f /dt=100a/ s qrr * - 6.4 - nc note : * 1. pulse test : pulse width ? 3 0 0s, duty cycle ? 2% *2.pulse width limited by maximum junction temperature.
cystech electronics corp. spec. no. : c 704j4 issued date : 20 16 . 06 . 02 revised date : 2016.06.03 page no. : 3 / 13 MTB5D0C03J4 cyste k product specification p - ch characteristics (t c =25 ? symbol min. typ. max. unit test conditions static bv dss - 30 - - v v gs =0v, i d = - 25 0 a ? bv dss / ? tj - - 0.02 - v/ ? c reference to 25 ? c , i d = - 250 a v gs(th) - 1 .0 - - 2.5 v v ds =v gs , i d = - 25 0 a i gss - - 100 na v gs = 20 v , v ds =0v i dss - - - 1 a v ds = - 30v, v gs =0v - - - 10 v ds = - 24v, v gs =0v, tj=55 ? c r ds ( on ) *1 - 13.4 17 m v gs = - 10 v, i d = - 4.5 a - 20.1 27.5 v gs = - 4.5 v, i d = - 4 a g fs *1 - 13.8 - s v ds = - 10 v , i d = - 7a dynamic qg *1 - 35.6 - nc v ds = - 24v, i d = - 6a, v gs = - 10v qgs *1 - 4.7 - qgd *1 - 8.6 - t d(on) *1 - 11.2 - ns v ds = - 15v, i d = - 1a, v gs = - 10v, r g =2.7 tr *1 - 21.2 - t d(off) *1 - 70.8 - t f *1 - 16.6 - ciss - 1474 - pf v ds = - 25v, v gs =0v, f=1mhz co ss - 154 - crss - 133 - source - drain diode i s *1 - - - 26.5 a i sm *2 - - - 106 v sd *1 - - 0.87 - 1.2 v i s = - 10a, v gs =0 v trr * - 12 - ns i f == - 6a, di f /dt=100a/ s qrr * - 5.7 - nc note : * 1. pulse test : pulse width ? 3 0 0s, duty cycle ? 2% *2.pulse width limited by maximum junction temperature. o rdering inf ormation device package shipping MTB5D0C03J4 - 0 - t3 - g t o - 252 (rohs compliant & halogen - free package) 25 00 pcs / tape & reel environment friendly grade : s for rohs compliant products, g for rohs complia nt and green compound products packing spec, t3 : 2500 pcs / tape & reel, 13 reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c 704j4 issued date : 20 16 . 06 . 02 revised date : 2016.06.03 page no. : 4 / 13 MTB5D0C03J4 cyste k product specification q1, n - ch typical characteristics typical output characteristics 0 10 20 30 40 50 0 1 2 3 4 5 v ds , drain-source voltage(v) i d , drain current(a) v gs =3v 10v, 9v, 8v, 7v, 6v, 5v 3.5 v 4v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs = 4.5 v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25 c tj=150 c static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =10a drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =10a r ds(on) @tj=25c : 6.7 m typ. v gs =4.5v, i d =7a, r ds(on) @tj=25c :8.3m typ.
cystech electronics corp. spec. no. : c 704j4 issued date : 20 16 . 06 . 02 revised date : 2016.06.03 page no. : 5 / 13 MTB5D0C03J4 cyste k product specification q1, n - ch typical characteristics (cont.) capacitance vs drain-to-source voltage 100 1000 10000 0 5 10 15 20 25 30 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) v g s(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =10v pulsed ta=25 c gate charge characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =8a v ds =80v v ds =50v maximum safe operating area 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 1ms 100 s r ds(on) limited t a =25c, tj=150c, v gs =10v r ja =90c/w,single pulse 1s 100ms maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175 t j , junction temperature( c) i d , maximum drain current(a) t a =25c, tj(max)=150c,v gs =10v r ja =90c/w
cystech electronics corp. spec. no. : c 704j4 issued date : 20 16 . 06 . 02 revised date : 2016.06.03 page no. : 6 / 13 MTB5D0C03J4 cyste k product specification q1, n - ch typical characteristics (cont.) typical transfer characteristics 0 10 20 30 40 50 0 1 2 3 4 5 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =90c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =90 c/w maximum drain current vs case temperature 0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175 200 t c , case temperature(c) i d , maximum drain current(a) tj(max)=150c,v gs =4.5v r jc =6c/w
cystech electronics corp. spec. no. : c 704j4 issued date : 20 16 . 06 . 02 revised date : 2016.06.03 page no. : 7 / 13 MTB5D0C03J4 cyste k product specification q2, p - ch typical characteristics typical output characteristics 0 10 20 30 40 50 0 1 2 3 4 5 -v ds , drain-source voltage(v) -i d , drain current (a) -10v, -9v, -8v,-7v,-6v,-5v v gs =-3v -3 .5 v -4v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 0.01 0.1 1 10 100 -i d , drain current(a) r ds( on) , static drain-source on-state resistance(m) v gs =-4.5v v gs =-10v source drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10 -i s , source drain current(a) -v sd , source-drain voltage(v) v gs =0v tj=25 c tj=150 c static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 -v gs , gate-source voltage(v) r ds(on) , static drain-source on-state resistance(m) i d =- 10 a drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) r ds(on) , normalized static drain-source on-state resistance v gs =-10v, i d =-10a r ds(on) @tj=25c : 13.4m typ. v gs =-4.5v, i d =-7a r ds(on) @tj=25c : 20.1m typ.
cystech electronics corp. spec. no. : c 704j4 issued date : 20 16 . 06 . 02 revised date : 2016.06.03 page no. : 8 / 13 MTB5D0C03J4 cyste k product specification q2, p - ch typical characteristics (cont.) capacitance vs drain-to-source voltage 100 1000 10000 0 5 10 15 20 25 30 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) -v gs(t h) , threshold voltage(v) i d =-250 a i d =-1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer adm ittance(s) v ds =-10v pulsed t a =25 c gate charge characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 qg, total gate charge(nc) -v gs , gate-source voltage(v) i d =- 6 a v ds =-80v v ds =-50v maximum safe operating area 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 -i d , drain-source voltage(v) -i d , drain current(a) dc 10ms 100ms 100 s t a =25c, tj=150c, v gs =-10v r j a =90c/w, single pulse 1s 1ms maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 8 25 50 75 100 125 150 175 tj, junction temperature( c) -i d , maxim um drain current(a) t a =25c, tj(max)=150c,v gs =-10v r ja =90c/w
cystech electronics corp. spec. no. : c 704j4 issued date : 20 16 . 06 . 02 revised date : 2016.06.03 page no. : 9 / 13 MTB5D0C03J4 cyste k product specification q2, p - ch typical characteristics (cont.) typical transfer characteristics 0 10 20 30 40 50 0 1 2 3 4 5 -v gs , gate-source voltage(v) -i d , drain current (a) v ds =-10v single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =90c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =90 c/w maximum drain current vs case temperature 0 5 10 15 20 25 30 25 50 75 100 125 150 175 200 t c , case temperature(c) -i d , maxim um drain current(a) tj(max)=150c, v gs =-4.5v r jc =6c/w
cystech electronics corp. spec. no. : c 704j4 issued date : 20 16 . 06 . 02 revised date : 2016.06.03 page no. : 10 / 13 MTB5D0C03J4 cyste k product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c 704j4 issued date : 20 16 . 06 . 02 revised date : 2016.06.03 page no. : 11 / 13 MTB5D0C03J4 cyste k product specification recommended soldering footprint unit : mm
cystech electronics corp. spec. no. : c 704j4 issued date : 20 16 . 06 . 02 revised date : 2016.06.03 page no. : 12 / 13 MTB5D0C03J4 cyste k product specification recommended wave soldering condition product peak temperature soldering time pb - free devi ces 260 +0/ - 5 ? c 5 +1/ - 1 seconds recommended temperature profile for ir reflow profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (tsmax to tp) 3 ? c /second max. 3 ? c /second max. preheat ? temperature min(t s min) ? temperat ure max(t s max) ? time(ts min to ts max ) 100 ? c 150 ? c 60 - 120 seconds 150 ? c 200 ? c 60 - 180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 ? c 60 - 150 seconds 217 ? c 60 - 150 seconds peak temperature(t p ) 240 +0/ - 5 ? c 260 +0/ - 5 ? c time withi n 5 ? c of actual peak temperature(tp) 10 - 30 seconds 20 - 40 seconds ramp down rate 6 ? c /second max. 6 ? c /second max. time 25 ? c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c 704j4 issued date : 20 16 . 06 . 02 revised date : 2016.06.03 page no. : 13 / 13 MTB5D0C03J4 cyste k product specification to - 252 dimension dim inches millimeters dim inches millimeters min. max. min. max. min. max. min. max. a 0.0 866 0.0 945 2.20 2.40 e 0.2520 0.2677 6.40 6.8 0 a1 0.0 000 0.0 059 0.00 0.15 e1 0.1500 - 3.81 - b 0.0157 0.0 236 0. 4 0 0.6 0 e 0.0500 ref 1.27 ref b2 0.0 199 0.0 315 0. 50 0. 80 f 0.0157 0.0236 0.40 0.60 b3 0. 2047 0. 2165 5.2 0 5.5 0 h 0.3701 0.4016 9.4 0 10.2 0 c2 0. 0177 0. 0 2 17 0 .4 5 0.55 l 0.0551 0.0697 1.4 0 1. 77 d 0.2126 0.2283 5.40 5.80 l1 0.0945 0.1181 2.40 3.00 d1 0. 1799 - 4.57 - l4 0.0315 0.0472 0.80 1.20 notes: 1. controlling dimension: millimeters. 2 . maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing sp ecification or packing method, please contact your local cystek sales office. material: ? lead : pure tin pla ted. ? mold compound: epoxy resin family, flammability solid burning class: ul94v - 0 . important notice: ? all rights are reserved. reproduction i n whole or in part is prohibited without the prior written approval of cyste k . ? cyste k reserves the right to make changes to its products without notice. ? cyste k semiconductor products are not warranted to be suitable for use in life - support applications , or systems. ? cyste k assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. marking: style: pin 1. soure 1 2. gate 1 3. &tab drain 1& drain 2 4. source 2 5. gate 2 4 - lead to - 252 plastic surface mount package cystek package code: j 4 b5d0 c03 device name d ate code tab

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