DMN2501UFB4 document number: ds35824 rev. 3 - 2 1 of 6 www.diodes.com august 2012 ? diodes incorporated DMN2501UFB4 advance information n-channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d t a = 25c 20v 0.4 @ v gs = 4.5v 1.5a 0.5 @ v gs = 2.5v 1.3a 0.7 @ v gs = 1.8v 1.1a description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? dc-dc converters ? power management functions features and benefits ? low on-resistance ? very low gate threshold voltage v gs(th) , 1.0v max ? low input capacitance ? fast switching speed ? ultra-small surfaced mount package ? ultra-low package profile, 0.4mm maximum package height ? esd protected gate ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: x2-dfn1006-3 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? nipdau ov er copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.001 grams (approximate) ordering information (note 4) part number case packaging DMN2501UFB4-7 x2-dfn1006-3 3,000/tape & reel DMN2501UFB4-7b x2-dfn1006-3 10,000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporated?s definitions of halogen an d antimony free, "green" and lead-free. ? 3. halogen and antimony free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm to tal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information x2-dfn1006-3 top view internal schematic bottom view tn = product type marking code top view bar denotes gate and source side d s g esd protected DMN2501UFB4-7 DMN2501UFB4-7b top view dot denotes drain side tn tn source body diode gate protection diode gate drain equivalent circuit e4
DMN2501UFB4 document number: ds35824 rev. 3 - 2 2 of 6 www.diodes.com august 2012 ? diodes incorporated DMN2501UFB4 advance information maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 8 v continuous drain current (note 5) v gs = 4.5v steady state t a = 25c t a = 70c i d 1.0 0.8 a t<10s t a = 25c t a = 70c i d 1.2 0.9 a continuous drain current (note 6) v gs = 4.5v steady state t a = 25c t a = 70c i d 1.5 1.2 a t<10s t a = 25c t a = 70c i d 1.8 1.4 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm 6 a maximum body diode continuous current i s 1 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) t a = 25c p d 0.5 w t a = 70c 0.3 thermal resistance, junction to ambient (note 5) steady state r ja 251 c/w t<10s 188 total power dissipation (note 6) t a = 25c p d 1.2 w t a = 70c 0.7 thermal resistance, junction to ambient (note 6) steady state r ja 110 c/w t<10s 82 operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 20 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = 25c i dss - - 100 na v ds = 20v, v gs = 0v gate-source leakage i gss - - 1 a v gs = 6v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) 0.5 0.76 1.0 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 170 400 m v gs = 4.5v, i d = 600ma 200 500 v gs = 2.5v, i d = 500ma 260 700 v gs = 1.8v, i d = 350ma forward transfer admittance |y fs | - 1.4 - s v ds = 10v, i d = 400ma diode forward voltage v sd 0.7 1.2 v v gs = 0v, i s = 150ma dynamic characteristics (note 8) input capacitance c iss - 82 - pf v ds =16v, v gs = 0v, f = 1.0mhz output capacitance c oss - 12 - pf reverse transfer capacitance c rss - 10 - pf gate resistance r g - 83 - v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge (v gs = 4.5v) q g - 1.1 - nc v ds = 10v, i d = 250ma total gate charge (v gs = 10v) q g - 2.0 - nc gate-source charge q g s - 0.14 - nc gate-drain charge q g d - 0.19 - nc turn-on delay time t d ( on ) - 6.6 - ns v dd = 10v, v gs = 4.5v, r l = 47 ? , r g = 10 ? , i d = 200ma turn-on rise time t r - 6.4 - ns turn-off delay time t d ( off ) - 40.4 - ns turn-off fall time t f - 17.3 - ns notes: 5. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6. device mounted on fr-4 substrate pc board, 2oz copper, with 1inch square copper plate. 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to product testing.
DMN2501UFB4 document number: ds35824 rev. 3 - 2 3 of 6 www.diodes.com august 2012 ? diodes incorporated DMN2501UFB4 advance information 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.5 1.0 1.5 2.0 2.5 3.0 v , drain-source voltage (v) fig. 1 typical output characteristic ds i, d r ain c u r r en t (a) d v= 1.2v gs v= 1.5v gs v= 2.0v gs v= 2.5v gs v= 4.5v gs v= 8.0v gs 0 0.4 0.8 1.2 1.6 2.0 v , gate-source voltage (v) gs fig. 2 typical transfer characteristics 0 4 8 12 16 20 i, d r ai n c u r r e n t (a) d v= 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0.05 0.15 0.25 0.35 0.45 0 0.4 0.8 1.2 1.6 2.0 0 0.10 0.20 0.30 0.40 0.50 i , drain-source current (a) d fig. 3 typical on-resistance vs. drain current and gate voltage r , d r ain-s o u r ce o n- r esistance ( ) ds(on) v = 4.5v gs v = 8.0v gs v = 2.5v gs v = 1.8v gs 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 012 3456 1.0 0 v , gate-source voltage (v) gs fig. 4 typical drain-source on-resistance vs. gate-source voltage r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) i = 600ma d i = 500ma d i = 350ma d 0.05 0.15 0.25 0 0.10 0.20 0.30 04 8121620 i , drain current (a) d fig. 5 typical on-resistance vs. drain current and temperature r , d r ain-s o u r ce o n- r esistance ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.6 0.8 1.0 1.2 1.4 1.8 r , d r ain-s o u r c e on-resistance (normalized) ds(on) 1.6 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 6 on-resistance variation with temperature j v= v i= 1a gs d 8.0 v= v i= 1.0a gs d 4.5
DMN2501UFB4 document number: ds35824 rev. 3 - 2 4 of 6 www.diodes.com august 2012 ? diodes incorporated DMN2501UFB4 advance information 0.05 0.15 0.25 0 0.10 0.20 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 7 on-resistance variation with temperature j r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) v = 4.5v i = 1.0a gs d v= v i= 1a gs d 8.0 0.2 0.4 0.6 0.8 1.2 1.0 0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 8 gate threshold variation vs. ambient temperature j v, g a t e t h r es h o ld v o l t a g e (v) gs(th) i= 1ma d i = 250a d 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0 0.3 0.6 0.9 1.2 1.5 1.0 2.0 0 v , source-drain voltage (v) sd fig. 9 diode forward voltage vs. current i, s o u r c e c u r r en t (a) s t = -55c a t= 25c a t= 85c a t = 125c a t = 150c a 1,000 0 2 4 6 8 101214161820 100 10 1 v , drain-source voltage (v) ds fig. 10 typical junction capacitance c , j u n c t i o n c a p a c i t an c e (pf) t c iss c oss c rss f = 1mhz 0 1 2 3 4 5 6 7 8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v g a t e t h r es h o ld v o l t a g e (v) gs q( n c ) g , total gate charge fig. 11 gate charge v = 10v i= a ds d 250m 0.01 0.1 1 10 100 v , drain-source voltage (v) fig. 12 soa, safe operation area ds 0.01 0.1 1 10 100 i, d r ain c u r r en t (a) d t = 150c t = 25c j(max) a v = 8v single pulse gs dut on 1 * mrp board r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w
DMN2501UFB4 document number: ds35824 rev. 3 - 2 5 of 6 www.diodes.com august 2012 ? diodes incorporated DMN2501UFB4 advance information 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration time (sec) fig. 13 transient thermal resistance r (t) = r(t) * r r = 251c/w duty cycle, d = t1/ t2 ? ja ja ja 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. x2-dfn1006-3 dim min max typ a ? 0.40 ? a1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.05 1.00 e 0.55 0.65 0.60 e ? ? 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 ? ? 0.40 all dimensions in mm dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 y c g1 g2 x x 1 z l2 a1 e b2 l1 l3 d e b1 a
DMN2501UFB4 document number: ds35824 rev. 3 - 2 6 of 6 www.diodes.com august 2012 ? diodes incorporated DMN2501UFB4 advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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