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| datasheet www.rohm.com ? 2013 rohm co., ltd. all rights reserved. rrl025p03 pch -30v -2.5a power mosfet junction temperature t j 150 c range of storage temperature t stg - 55 to + 150 c power dissipation gate - source voltage v gss ? 20 v p d *3 1.0 w p d *4 0.32 w continuous drain current i d *1 ? 2.5 a pulsed drain current i d,pulse *2 ? 10 a drain - source voltage v dss - 30 v taping code tr marking ua l absolute maximum ratings (t a = 25c) parameter symbol value unit l packaging specifications type packaging taping l application reel size (mm) 180 dc/dc converters tape width (mm) 8 basic ordering unit (pcs) 3,000 l features l inner circuit 1) low on - resistance. 2) built-in g-s protection diode. 3) small surface mount package (tumt6). 4) pb-free lead plating ; rohs compliant l outline v dss - 30v tumt6 r ds(on) (max.) 75m w i d - 2.5a p d 1.0w (1) (2) (3) (4) (5) (6) * 1 esd protection diode * 2 body diode (1) drain (2) drain (3) gate (4) source (5) drain (6) drain 1/11 2013.02 - rev.b sot-363t downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rrl025p03 *1 limited only by maximum temperature allowed. *2 pw ? 10 m s, duty cycle ? 1% *3 mounted on a seramic board (30300.8mm) *4 mounted on a fr4 (15200.8mm) *5 pulsed w transconductance g fs *5 v ds = - 10v, i d = - 2.5a 2.0 4.4 - s gate input resistannce r g f = 1mhz, open drain - 24 - m w v gs = - 4.5v, i d = - 1.2a - 85 115 v gs = - 4.0v, i d = - 1.2a - 95 125 v gs = - 10v, i d = - 2.5a, t j =125c static drain - source on - state resistance r ds(on) *5 v gs = - 10v, i d = - 2.5a - 55 75 - 95 135 v gate threshold voltage temperature coefficient v (gs)th t j i d = - 1ma referenced to 25c - 3.9 - mv/c gate threshold voltage v gs (th) v ds = - 10v, i d = - 1ma - 1 - - 2.5 m a gate - source leakage current i gss v gs = ? 20v, v ds = 0v - - ? 10 m a zero gate voltage drain current i dss v ds = - 30v, v gs = 0v - - - 1 v breakdown voltage temperature coefficient v (br)dss t j i d = - 1ma referenced to 25c - - 25 - mv/c drain - source breakdown voltage v (br)dss v gs = 0v, i d = - 1ma - 30 - - l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. l thermal resistance parameter symbol values unit min. typ. max. r thja *4 - - 391 c/w r thja *3 - - 125 c/w thermal resistance, junction - ambient 2/11 2013.02 - rev.b downloaded from: http:/// www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rrl025p03 - - 1.2 v a inverse diode continuous, forward current i s *1 t a = 25c - - - 0.8 forward voltage v sd *5 v gs = 0v, i s = - 2.5a - min. typ. max. - 1.6 - gate - drain charge q gd *5 - 1.6 - l body diode electrical characteristics (source-drain)(t a = 25c) parameter symbol conditions values unit nc gate - source charge q gs *5 v dd ? - 15v, i d = - 2.5a v gs = - 5v total gate charge q g *5 v dd ? - 15v, i d = - 2.5a v gs = - 5v v dd ? - 15v, i d = - 2.5a v gs = - 10v - 5.2 - - 12 - - l gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. turn - on delay time t d(on) *5 v dd ? - 15v, v gs = - 10v - 7 - ns rise time t r *5 i d = - 1.2a - 16 - turn - off delay time t d(off) *5 r l = 12.5 w - 50 - fall time t f *5 r g = 10 w - 33 pf output capacitance c oss v ds = - 10v - 70 - reverse transfer capacitance c rss f = 1mhz input capacitance c iss v gs = 0v - 480 - - 70 - l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. 3/11 2013.02 - rev.b downloaded from: http:/// rrl025p03 l electrical characteristic curves 1 10 100 1000 0.0001 0.01 1 100 t a =25 oc single pulse 0.01 0.1 1 10 100 0.1 1 10 100 operation in this area is limited by r ds (on) ( v gs = 10v ) p w = 100 m s p w = 1ms p w = 10ms dc operation t a =25 oc single pulse mounted on a ceramic board. (30mm 30mm 0.8mm) 0 20 40 60 80 100 120 0 50 100 150 200 0.001 0.01 0.1 1 10 0.0001 0.01 1 100 rth(ch - a)=125 oc/w rth(ch -a)(t)=r(t) rth(ch- a) mounted on ceramic board (30mm 30mm 0.8mm) top d=1 d=0.5 d=0.1 d=0.05 d=0.01 bottom signle t a =25 oc single pulse fig.1 power dissipation derating curve fig.2 maximum safe operating area power dissipation : p d /p d max. [%] drain current : -i d [a] fig.3 normalized transient thermal resistance vs. pulse width fig.4 single pulse maxmum power dissipation normalized transient thermal resistance : r (t) pulse width : p w [s] pulse width : p w [s] peak transient power : p(w) junction temperature : tj [ c] drain - source voltage : -v ds [v] 4/11 2013.02 - rev.b downloaded from: http:/// www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rrl025p03 l electrical characteristic curves 0 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 v gs = - 3.2v v gs = - 2.8v v gs = - 10v v gs = - 4.5v v gs = - 3.0v v gs = - 3.8v v gs = - 2.5v t a =25 oc pulsed 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 v gs = - 3.2v v gs = - 10v v gs = - 4.5v v gs = - 3.6v v gs = - 3.0v v gs = - 2.8v t a =25 oc pulsed 0.001 0.01 0.1 1 10 0 1 2 3 4 t a = 125 oc t a = 75 oc t a = 25 oc t a = - 25 oc v ds = - 10 v pulsed 0 20 40 60 -50 0 50 100 150 v gs = 0v i d = - 1ma pulsed fig.5 typical output characteristics(i) drain current : -i d [a] drain - source voltage : -v ds [v] fig.6 typical output characteristics(ii) drain current : -i d [a] drain - source voltage : -v ds [v] fig.7 breakdown voltage vs. junction temperature drain - source breakdown voltage : -v (br)dss [v] junction temperature : t j [ c ] fig.8 typical transfer characteristics gate - source voltage : -v gs [v] drain current : -i d [a] 5/11 2013.02 - rev.b downloaded from: http:/// www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rrl025p03 l electrical characteristic curves 0.1 1 10 0.1 1 10 v ds = - 10 v pulsed t a = - 25 oc t a =25 oc t a =75 oc t a =125 oc 0 100 200 300 0 2 4 6 8 10 i d = - 3.0a t a =25 oc pulsed i d = - 1.5a 0 1 2 3 -50 0 50 100 150 v ds = 10v i d = - 1ma pulsed 0 0.2 0.4 0.6 0.8 1 1.2 -25 0 25 50 75 100 125 150 fig.9 gate threshold voltage vs. junction temperature gate threshold voltage : -v gs(th) [v] junction temperature : t j [ c ] fig.10 transconductance vs. drain current transconductance : g fs [s] drain current : -i d [a] fig.11 drain currentderating curve drain current dissipation : i d /i d max. (%) junction temperature : t j [oc] fig.12 static drain - source on - state resistance vs. gate source voltage static drain - source on-state resistance : r ds(on) [m w ] gate - source voltage : -v gs [v] 6/11 2013.02 - rev.b downloaded from: http:/// www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rrl025p03 l electrical characteristic curves 10 100 1000 0.1 1 10 t a =125 oc t a =75 oc t a =25 oc t a = - 25 oc v gs = - 4.5v pulsed 10 100 1000 0.1 1 10 t a =125 oc t a =75 oc t a =25 oc t a = - 25 oc v gs = - 10v pulsed 10 100 1000 0.1 1 10 t a =25 oc pulsed v gs = - 4.0v v gs = - 4.5v v gs = - 10 v 0 20 40 60 80 100 120 -50 -25 0 25 50 75 100 125 150 v gs = - 10v i d = - 2.5a pulsed fig.13 static drain - source on - state resistance vs. drain current(i) static drain - source on-state resistance : r ds(on) [m w ] junction temperature : t j [oc] fig.14 static drain - source on - state resistance vs. junction temperature static drain - source on-state resistance : r ds(on) [m w ] drain current : -i d [a] fig.16 static drain-source on-state resistance vs. drain current( iii ) static drain - source on-state resistance : r ds(on) [m w ] drain current : -i d [a] fig.15 static drain - source on - state resistance vs. drain current(ii) static drain - source on-state resistance : r ds(on) [m w ] drain current : -i d [a] 7/11 2013.02 - rev.b downloaded from: http:/// www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rrl025p03 l electrical characteristic curves switching time : t [ns] 1 10 100 1000 0.01 0.1 1 10 t r t f t d(on) t a =25 oc v dd = - 15 v v gs = - 10 v r g =10 w pulsed t d(off) fig.19 switching characteristics 10 100 1000 0.1 1 10 t a =125 oc t a =75 oc t a =25 oc t a = - 25 oc v gs = - 4.0v pulsed 10 100 1000 0.01 0.1 1 10 100 c oss c rss c iss t a =25 oc f=1mhz v gs =0v 0 2 4 6 8 10 0 2 4 6 8 10 t a =25 oc v dd = - 15 v i d = - 2.5a r g =10 w pulsed fig.17 static drain - source on - state resistance vs. drain current( iv ) static drain - source on-state resistance : r ds(on) [m w ] drain current : -i d [a] fig.18 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : -v ds [v] drain current : -i d [a] fig.20 dynamic input characteristics gate - source voltage : -v gs [v] total gate charge : q g [nc] 8/11 2013.02 - rev.b downloaded from: http:/// www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rrl025p03 l electrical characteristic curves 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 v gs =0v pulsed t a =125 oc t a =75 oc t a =25 oc t a = - 25 oc fig.21 source current vs. source drain voltage source current : -i s [a] source-drain voltage : -v sd [v] 9/11 2013.02 - rev.b downloaded from: http:/// www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rrl025p03 l measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 10/11 2013.02 - rev.b downloaded from: http:/// www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rrl025p03 l dimensions (unit : mm) dimension in mm/inches tumt6 patterm of terminal position areas e h d e b x s a l c lp y s a1 a2 a s e1 b2 l1 e a e min max min max a - 0.85 - 0.033 a1 0.00 0.10 0 0.004 a2 0.72 0.82 0.028 0.032 b 0.25 0.40 0.01 0.016 c 0.12 0.22 0.005 0.009 d 1.90 2.10 0.075 0.083 e 1.60 1.80 0.063 0.071 e h e 2.00 2.20 0.079 0.087 l lp - 0.40 - 0.016 x - 0.10 - 0.004 y - 0.10 - 0.004 min max min max e1 b2 - 0.50 - 0.02 l1 - 0.50 - 0.02 inches 0.65 0.03 dim milimeters 0.20 0.01 dim milimeters inches 1.70 0.067 11/11 2013.02 - rev.b downloaded from: http:/// r1102 a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes the information contained herein is subject to change without notice. before you use our products, please contact our sales representativ e and verify the latest specifica- tions : although rohm is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. rohm shall have no responsibility for any damages arising out of the use of our poducts beyond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products are intended for use in general electronic equipment (i.e. av/oa devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10)11) 12) 13) 14) downloaded from: http:/// |
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