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| inchange semiconductor isc product specification isc silicon npn power transistors bd751b/751c description collector-emitter sustaining voltage- : v ceo(sus) = 100v(min)- bd751b = 130v(min)- BD751C high power dissipation complement to type bd750b/750c applications designed for high voltage and high power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit bd751b 110 v cev collector-emitter voltage BD751C 140 v bd751b 100 v ceo(sus) collector-emitter voltage BD751C 130 v v ebo emitter-base voltage 7 v i c collector current-continuous 20 a i b b base current-continuous 5 a p c collector power dissipation@t c =25 250 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 0.875 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors bd751b/751c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bd751b 100 v ceo(sus) collector-emitter sustaining voltage BD751C i c =100ma ; i b =0 130 v bd751b i c = 7.5a; i b = 0.75a 1.5 v ce (sat) collector-emitter saturation voltage BD751C i c = 5a; i b = 0.5a b 1.0 v bd751b i c = 7.5a; i b = 0.75a 1.8 v be (sat) base-emitter saturation voltage BD751C i c = 5a; i b = 0.5a b 1.8 v bd751b v cev = 110v;v be (off) = 1.5v 0.5 i cev collector cutoff current BD751C v cev = 140v;v be (off) = 1.5v 0.5 ma i ebo emitter cutoff current v eb = 7v; i c =0 1.0 ma bd751b i c = 7.5a ; v ce = 2v 15 60 h fe dc current gain BD751C i c = 5a ; v ce = 2v 25 100 f t current-gain?bandwidth product i c = 0.5a ;v ce = 10v; f test = 1mhz 4 mhz isc website www.iscsemi.cn 2 |
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